onsemi-NVBG020N090SC1
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DATA SHEET
M2, D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
900 V
28 m
W
@ 15 V
112 A
NVBG020N090SC1
Drain (TAB)
Features
•
Typ. R
•
Typ. R
= 20 m
W
@ V
= 15 V
DS(on)
DS(on)
GS
= 16 m
W
@ V
= 18 V
GS
Gate (Pin 1)
•
Ultra Low Gate Charge (typ. Q
= 200 nC)
G(tot)
•
Low Effective Output Capacitance (typ. C
= 295 pF)
oss
Driver Source (Pin 2)
•
100% Avalanche Tested
Power Source (Pins 3, 4, 5, 6, 7)
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
This Device is Halide Free and RoHS Compliant with exemption 7a,
N
−
CHANNEL MOSFET
Pb
−
Free 2LI (on second level interconnection)
Typical Applications
•
Automotive On Board Charger
•
Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
Unit
D2PAK
−
7L
CASE 418BJ
V
DSS
900
V
V
V
Gate
−
to
−
Source Voltage
V
GS
+22/
−
8
+15/
−
5
Recommended Operation
Values of Gate
−
Source Voltage
T
< 175
°
C
= 25
°
C
V
GSop
C
MARKING DIAGRAM
Steady
State
T
C
Continuous Drain
Current R
I
D
112
A
q
JC
AYWWZZ
NVBG
020N090SC1
Power Dissipation
P
I
477
9.8
W
A
D
R
q
JC
Steady
State
T =
25
°
C
A
Continuous Drain
Current R
D
q
JA
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
ZZ =
Lot Traceability
Power Dissipation
P
D
3.7
W
R
q
JA
T =
25
°
C
I
448
854
A
A
A
DM
NVBG020N090SC1 = Specific Device Code
Single Pulse Surge
Drain Current
T =
25
°
C, t
= 10
m
s,
A
I
DSC
p
R
= 4.7
W
G
ORDERING INFORMATION
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
†
Device
Package
Shipping
Source Current (Body Diode)
I
S
148
264
A
NVBG020N090SC1
D2PAK
−
7L
800 /
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
T
a
pe & Reel
L
pk
Maximum Lead
T
e
mperature for Soldering,
T
245
°
C
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
1/8
″
from Case for 10 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface
mounted on a FR
−
4 board using1 in
pad of 2 oz copper.
2. The
entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions noted.
3. Repetitive
rating, limited by max junction temperature.
4. Peak
current might be limited by transconductance.
5. E
of 264 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 23 A,
AS
DD
J
AS
V
= 100
V
, V
=
1
5
V
.
GS
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022
−
Rev. 3
NVBG020N090SC1/D
NVBG020N090SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.31
41
Unit
°
C/W
°
C/W
R
θ
JC
JA
R
θ
Table 2. ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
= 1
m
A
900
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
I =
1 mA, refer to 25
°
C
D
440
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0
V
,
= 900 V
T =
25
°
C
100
250
1
m
A
m
A
m
A
DSS
GS
J
DS
T =
175
°
C
J
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= +22/
−
8
V
, V
= 0 V
DS
GSS
Gate Threshold Voltage
V
R
V
= V
, I
= 20 mA
1.8
2.6
4.3
+15
28
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
GOP
−
5
V
GS
V
GS
V
GS
V
DS
= 15 V, I
= 60 A, T
= 25
°
C
20
16
27
49
m
W
DS(on)
D
J
= 18 V, I
= 60 A, T
= 25
°
C
D
J
= 15 V, I
= 60 A, T
= 175
°
C
D
J
Forward Transconductance
g
FS
= 20 V, I
= 60 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0
V
, f = 1
M
Hz,
= 450 V
4415
295
25
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
=
−
5/15
V
, V
=
7
20
V
,
200
42
nC
G(TOT)
GS
DS
I
= 60 A
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
G(TH)
Q
76
GS
GD
Q
56
f = 1 MHz
1.5
W
Gate
−
Resistance
R
G
SWITCHING CHARACTERISTICS
Turn
−
On Delay Time
t
V
D
=
−
5/15
V
, V
=
7
20
V
,
39
52
ns
d(ON)
GS
DS
I
= 60 A, R
= 2.5
W
,
G
Rise Time
t
r
Inductive Load
Turn
−
Off Delay Time
t
58
d(OFF)
Fall Time
t
f
13
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
1551
179
1730
m
J
ON
E
OFF
TOT
E
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Continuous Drain
−
Source Diode Forward
I
V
GS
V
GS
V
GS
=
−
5
V
, T
=
2
5
°
C
148
448
A
A
V
SD
J
Current
Pulsed Drain
−
Source Diode Forward
I
=
−
5
V
, T
=
2
5
°
C
J
SDM
Forward Diode Voltage
V
=
−
5
V
, I
=
3
0 A, T
= 25
°
C
3.7
SD
SD
J
2
NVBG020N090SC1
J
Parameter
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
=
−
5/15
V
, I
=
6
0 A,
28
186
4
ns
nC
m
J
A
RR
GS
S
SD
dI /dt
= 1000 A/
m
s, V
= 720 V
DS
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
14
17
11
RRM
Ta
ns
ns
Discharge Time
Tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NVBG020N090SC1
TYPICAL CHARACTERISTICS
200
150
100
4
13 V
V
GS
= 15 V
9 V
V
GS
= 10 V
12 V
3
12 V
2
13 V
15 V
10 V
9 V
50
0
1
6 V
7 V
0
0
2
4
6
8
10
0
30
60
90
120
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
1.9
1.7
1.5
1.3
1.1
160
120
80
I
D
= 60 A
I
V
= 60 A
D
= 15 V
GS
40
0
T =
150
°
C
J
0.9
0.7
T =
25
°
C
J
−
75
−
50
−
25
0
25 50 75
100 125 150 175
5
10
15
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
120
100
80
300
T =
175
°
C
J
T =
−
55
°
C
J
V
GS
=
−
5 V
T =
25
°
C
J
T =
−
55
°
C
J
T =
175
°
C
J
60
30
40
T =
25
°
C
J
20
0
V
DS
= 20 V
3
3
6
9
12
15
1
3
5
7
9
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
4
NVBG020N090SC1
TYPICAL CHARACTERISTICS
(continued)
15
10
5
50K
V
DD
= 180 V
I
D
= 60 A
10K
1K
V
DD
= 540 V
C
iss
V
DD
= 720 V
C
oss
C
rss
100
0
10
1
f = 1 MHz
= 0 V
V
GS
−
5
0.1
1
10
100
800
175
0.1
0
50
100
Q ,
GATE CHARGE (nC)
150
200
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
g
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Figure 8. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
100
140
120
100
80
V
GS
= 15 V
T =
25
°
C
J
10
60
T =
150
°
C
J
40
20
0
Typical performance based
on characterization data
R
= 0.31
°
C/W
q
JC
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
10K
1000
100
10
Single Pulse
R
= 0.31
°
C/W
q
JC
T
C
= 25
°
C
10
m
s
This area is lim-
ited by R
DS(on)
100
m
s
1K
Single Pulse
T =
Max Rated
1
J
1 ms
10 ms
R
= 0.31
°
C/W
q
JC
T
= 25
°
C
C
100 ms
1000 5000
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
0.1
100
0.1
1
10
100
0.00001 0.0001
0.001
0.01
V
DS
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
NVBG020N090SC1
TYPICAL CHARACTERISTICS
(continued)
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Notes:
Z (t)
= r(t) x R
q
JC
P
Single Pulse
0.00001
DM
0.01
q
JC
R
= 0.31
°
C/W
q
JC
t
Peak T
= P
x Z
(t) + T
JC C
1
q
J
DM
Duty Cycle, D = t
/t
t
1
2
2
0.001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction
−
to
−
Ambient Transient Thermal Response Curve
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK7 (TO
−
263
−
7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D
2
PAK7 (TO
−
263
−
7L HV)
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
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