onsemi-NVBLS001N06C
| Part # | onsemi-NVBLS001N06C |
Download  | onsemi-NVBLS001N06C |
N-Channel, TOLL
60
V
,
0
.9 m
W
, 422 A
NVBLS001N06C
Features
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
•
Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
60 V
0.9 m
W
@ 10 V
422 A
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
60
Unit
V
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
G
Continuous Drain
T
= 25
°
C
= 100
°
C
= 25
°
C
I
422
298
284
142
51
A
C
D
Current R
q
JC
T
C
Steady
State
Power Dissipation
T
C
P
W
A
D
R
q
JC
S
T
C
= 100
°
C
Continuous Drain
Current R
T =
25
°
C
A
I
D
q
JA
T =
100
°
C
A
36
Steady
State
Power Dissipation
T =
25
°
C
A
P
4.2
2.1
900
W
D
R
q
JA
T =
100
°
C
A
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
A
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
H
−
PSOF8L
CASE 100CU
Source Current (Body Diode)
I
S
236
A
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
1640
mJ
Energy (I
= 39 A)
L(pk)
ORDERING INFORMATION
Lead
T
e
mperature Soldering Reflow for Solder-
ing Purposes (1/8
″
from case for 10 s)
T
L
260
°
C
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NVBLS001N06C
H
−
PSOF8L
(Pb
−
Free)
2000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.53
36
Unit
R
°
C/W
q
JC
R
q
JA
2
1. Surface
−
mounted on FR4 board using a 1 in
pad size, 2 oz. Cu pad.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
July, 2021
−
Rev. 2
NVBLS001N06C/D
NVBLS001N06C
Table 1. ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Units
Drain
−
to
−
Source Breakdown Voltage
V
I
D
= 250
m
A, V
= 0 V
60
V
(BR)DSS
GS
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
I =
562
m
A, ref to 25
°
C
D
26
mV/
°
C
(BR)DSS
V
= 60 V,
GS
T =
25
°
C
10
Zero Gate Voltage Drain Current
I
m
A
m
A
nA
DS
J
DSS
V
= 0 V
T =
125
°
C
J
100
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
GS
GSS
DS
GS
V
GS(th)
V
= V
, I
= 562
m
A
2.0
2.8
9.9
4.0
0.9
V
mV/
°
C
m
W
S
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
CHARGES & CAPACTIANCES
Input Capacitance
V
/T
I =
562
m
A, ref to 25
°
C
D
GS(th)
J
R
V
GS
= 10
V
, I
=
8
0 A
0.75
290
DS(on)
D
g
V =
5
V
, I
=
8
0 A
DS D
FS
C
V
GS
= 0
V
, V
=
3
0
V
, f =
1
0 kHz
11575
5973
76
pF
pF
pF
nC
nC
nC
nC
iss
DS
Output Capacitance
C
oss
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
rss
Q
V
GS
= 10
V
, V
=
3
0
V
,
I
143
31
G(tot)
DS
= 80 A
D
Threshold Gate Charge
Q
G(th)
Gate
−
to
−
Source Charge
Q
54
gs
gd
Gate
−
to
−
Drain Charge
Q
13
GS
Turn
−
On Delay Time
Rise Time
t
V
= 10
V
, V
=
3
0
V
,
34
53
ns
ns
ns
ns
d(on)
GS
D
DS
I
= 80 A, R
= 6
W
G
t
r
Turn
−
Off Delay Time
Fall Time
t
119
91
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
I
= 80 A, V
= 0 V
T =
25
°
C
0.79
0.66
120
60
1.2
V
V
SD
S
GS
J
= 80 A, V
= 0 V
T =
125
°
C
J
S
GS
Reverse Recovery Time
Charge Time
t
ns
ns
ns
nC
V
GS
= 0
V
,
d
I
/d =
100 A/
m
s,
S t
rr
I
= 56 A
S
t
a
b
Discharge Time
t
60
Reverse Recovery Charge
Q
322
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching
characteristics are independent of operating junction temperatures
2
NVBLS001N06C
TYPICAL CHARACTERISTICS
500
1200
1100
1000
900
10 V & 8 V
7.0 V
V
DS
= 5 V
6.0 V
400
300
200
100
0
800
700
600
500
V
= 5.0 V
4.5 V
GS
T =
25
°
C
J
400
300
200
100
0
T =
125
°
C
J
T =
−
55
°
C
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.75
2.5
3.0
2.75
2.5
T =
25
°
C
D
J
I
= 80 A
2.25
2.0
2.25
2.0
1.75
1.5
1.75
1.5
V
GS
= 5 V
V
GS
= 5.5 V
1.25
1.0
1.25
1.0
V
= 6 V
GS
V
GS
= 7 V
0.75
0.5
0.75
0.5
V
GS
= 10 V
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5 10
0
50
100 150
200
250
300
350 400
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. V
GS
Figure 4. On
−
Resistance vs. Drain Current and
Gate Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1M
100K
10K
1K
V
= 10 V
= 80 A
GS
I
D
T =
175
°
C
J
T =
150
°
C
J
T =
125
°
C
J
T =
85
°
C
J
100
10
V
= 0 V
GS
−
50
−
25
0
25
50
75 100
125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NVBLS001N06C
TYPICAL CHARACTERISTICS
11
10
9
100K
Q
T
10K
1K
8
C
iss
7
C
oss
Q
Q
GD
GS
6
5
4
3
2
1
0
100
V
= 0 V
C
GS
rss
V
= 30 V
= 80 A
DS
T =
25
°
C
J
I
D
f = 10 kHz
T =
25
°
C
J
10
0
10
20
30
40
50
60
0
20
40
60
80
100
120
140
160
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Gate Charge
1000
100
10
1000
V
V
= 10 V
= 30 V
= 80 A
V
= 0 V
GS
GS
DS
t
r
I
D
t
d(off)
100
10
t
d(on)
T =
175
°
C
J
t
f
1
T =
150
°
C
J
T =
25
°
C T
=
−
55
°
C
J J
0.1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.2 0.3 0.4 0.5
0.6 0.7 0.8 0.9
1.0 1.1
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10
m
s
T
= 25
°
C
J(initial)
0.5 ms
1 ms
T
= 100
°
C
Single Pulse
= 25
°
C
J(initial)
T
C
10
1
V
GS
≤
10 V
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Avalanche Characteristics
4
NVBLS001N06C
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
R
Steady State = 36
°
C/W
q
JA
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics (Junction
−
to
−
Ambient)
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H
−
PSOF8L 11.68×9.80
CASE 100CU
ISSUE B
DATE 20 MAY 2022
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
=
Y
e
ar
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
WW =
Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H
−
PSOF8L 11.68×9.80
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
