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” or its affiliates and/or
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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
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d
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N-Channel, TOLL
80
V
,
1
.7 m
W
, 241.3 A
NVBLS1D7N08H
Features
•
Low R
to Minimize Conduction Losses
•
Low Q
and Capacitance to Minimize Driver Losses
DS(on)
G
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
Lowers Switching Noise/EMI
•
These Devices are Pb
−
Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
1.7 m
W
@ 10 V
241.3 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
80
Unit
V
D
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25
°
C
= 100
°
C
= 25
°
C
I
241.3
170.6
237.5
118.7
33
A
C
D
q
JC
T
C
G
Steady
State
Power Dissipation
T
C
P
W
A
D
R
q
JC
S
T
C
= 100
°
C
Continuous Drain
Current R
T =
25
°
C
A
I
D
N
−
CHANNEL MOSFET
q
JA
T =
100
°
C
A
23.3
4.4
Steady
State
Power Dissipation
T =
25
°
C
A
P
W
D
R
q
JA
T =
100
°
C
A
2.2
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
900
A
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
TOLL
CASE 100CU
Source Current (Body Diode)
I
197.9
1172
A
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 21 A)
L(pk)
MARKING DIAGRAM
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AYWWZZ
1D7N08H
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.63
Unit
A = Assembly Location
Y =
Y
e
ar
R
°
C/W
q
JC
WW = Work Week
ZZ = Lot Traceability
1D7N08H = Specific Device Code
Junction
−
to
−
Ambient
−
Steady State
R
33.8
q
JA
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
2
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2021
−
Rev. 1
NVBLS1D7N08H/D
NVBLS1D7N08H
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
80
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
57
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
DSS
GS
DS
J
V
= 80 V
m
A
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
GS
Gate Threshold Voltage
V
V
= V
, I
= 479
m
A
2.0
2.9
−
7.3
1.29
271
4.0
1.7
V
mV/
°
C
m
W
S
GS(TH)
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
J
I
= 479
m
A, ref to 25
°
C
GS(TH)
D
R
V
GS
= 10 V
I =
80 A
D
DS(on)
g
FS
V =5
V
, I
=
8
0 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
7675
1059
41
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0
V
, f = 1
M
Hz, V
= 40 V
pF
GS
DS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
121
19
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
32
= 10
V
, V
=
4
0 V; I
= 80 A
GS
GD
GP
GS
DS
D
Q
V
29
4.5
Turn
−
On Delay Time
t
29
25
89
35
d(ON)
Rise Time
t
r
V
= 10
V
, V
=
4
0
V
,
DS
GS
D
ns
V
I
= 80 A, R
= 6
W
G
Turn
−
Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.82
0.69
73
1.2
SD
J
V
S
= 0
V
,
GS
I
= 80 A
T =
125
°
C
J
Reverse Recovery Time
t
ns
RR
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 43 A
Reverse Recovery Charge
Q
138
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching
characteristics are independent of operating junction temperatures.
2
NVBLS1D7N08H
TYPICAL CHARACTERISTICS
250
200
150
100
250
10 V 8 V 6 V
5.0 V
V
DS
= 5 V
200
150
100
V
= 4.5 V
4.0 V
GS
T =
25
°
C
J
50
0
50
0
T =
175
°
C
J
T =
−
55
°
C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
50
40
30
20
4.0
3.0
2.0
I
D
= 80 A
V
GS
= 10 V
1.0
0.5
10
0
T =
25
°
C
J
T =
150
°
C
J
3
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1E
−
03
1E
−
04
1E
−
05
1E
−
06
1E
−
07
T =
175
°
C
J
V
= 10 V
= 80 A
GS
I
D
T =
150
°
C
J
T =
125
°
C
J
T =
100
°
C
J
T =
85
°
C
J
T =
25
°
C
J
1E
−
08
1E
−
09
0.8
0.6
−
75
−
50
−
25
0
25 50 75
100 125 150
175
0
10
V
20
30
40
50
60
70
80
T , JUNCTION TEMPERATURE (
°
C)
J
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NVBLS1D7N08H
TYPICAL CHARACTERISTICS
10
100K
10K
1K
I
D
= 80 A
V
DD
= 40 V
C
ISS
8
6
4
V
DD
= 30 V
V
DD
= 50 V
C
OSS
RSS
100
10
1
C
2
0
V
= 0 V
GS
f = 1 MHz
0
26
52
78
104
130
0.1
1
10
80
Q ,
TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
1000
250
200
V
GS
= 0 V
t
t
d(off)
t
f
150
100
t
r
100
10
d(on)
50
0
T =
175
°
C
J
T =
25
°
C
J
T =
−
55
°
C
J
0
5
10 15
20 25
30 35 40 45
50
0
0.2
0.4
0.6
0.8
1.0
1.2
R ,
GATE RESISTANCE (
W
)
G
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10
m
s
T
= 25
°
C
J(initial)
T
= 25
°
C
C
T
= 100
°
C
0.5 ms
1 ms
J(initial)
Single Pulse
≤
10 V
10
1
V
GS
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
t ,
TIME IN AVALANCHE (s)
AV
0.01
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
4
NVBLS1D7N08H
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NVBLS1D7N08H
1D7N08H
H
−
PSOF8L
(Pb
−
Free)
2000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
NVBLS1D7N08H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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For additional information, please contact your local Sales Representative
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