onsemi-NVD5C684NLT4G
| Part # | onsemi-NVD5C684NLT4G |
Download  | onsemi-NVD5C684NLT4G |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most
current and up-to-date ordering information can be found at
www.onsemi.com
. Please
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2015
FDMS86300
N-Channel PowerTrench
®
MOSFET
80 V, 122 A, 3.9 m
Ω
Features
General Description
Max r
DS(on)
= 3.9 m
Ω
at V
GS
= 10
V
,
I
D
= 19 A
This N-Channel MOSFET
has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed and body
diode reverse recovery performance.
Max r
DS(on)
= 5.5 m
Ω
at V
GS
= 8
V
,
I
D
= 15.5 A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
Applications
MSL1 robust package design
100% UIL tested
OringFET / Load Switching
DC-DC Conversion
RoHS Compliant
Bottom
Top
Pin 1
S
G
S
S
S
D
D
D
D
5
6
7
8
4
3
S
S
G
2
1
D
D
D
D
Power 56
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
80
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
V
V
±20
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
122
78
I
D
A
-Continuous
(Note 1a)
(Note 4)
(Note 3)
19
-Pulsed
556
E
AS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
252
mJ
W
T
C
= 25 °C
T
A
= 25 °C
104
P
D
(Note 1a)
2.5
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.2
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS86300
FDMS86300
Power 56
3000 units
1
©2012 Fairchild Semiconductor Corporation
FDMS86300 Rev.1.4
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
80
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
39
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 64 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
μ
A
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2.5
3.4
-11
4.5
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
mV/°C
V
GS
= 10 V, I
D
= 19 A
3.2
3.8
5.0
60
3.9
5.5
5.8
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 8 V, I
D
= 15.5 A
m
Ω
V
GS
= 10 V, I
D
= 19 A, T
J
= 125 °C
V
DS
= 10 V, I
D
= 19 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
5325
957
26
7082
1272
63
pF
pF
pF
Ω
V
DS
= 40 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
31
26
50
43
58
18
86
71
ns
ns
V
DD
= 40 V, I
D
= 19 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
36
ns
9
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 8 V
72
nC
nC
nC
nC
Q
g
59
V
DD
= 40 V,
D
= 19 A
I
Q
gs
Q
gd
28.2
14.9
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
(Note 2)
0.71
0.81
57
1.2
1.3
90
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 19 A
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
I
F
= 19 A, di/dt = 100 A/
μ
s
I
F
= 19 A, di/dt = 300 A/
μ
s
Q
rr
t
rr
50
80
48
77
Q
rr
Notes
:
103
165
nC
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
b)
a)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
50 °C/W when mounted
on a
1 in
pad of
2 oz
copper
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. E
of 252 mJ is based on starting T
= 25
°
C, L = 0.3 mH, I
= 41 A, V
= 72 V, V
= 10 V.
AS
J
AS
DD
GS
4. Pulse Id limited by junction temperature, td
≤
100
μ
s, please refer to SOA curve for more details.
©2012 Fairchild Semiconductor Corporation
FDMS86300 Rev.1.4
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
250
5
4
3
2
1
0
V
= 8 V
GS
V
= 7 V
GS
V
GS
= 5.5 V
V
GS
= 6 V
200
150
100
50
V
= 6.5 V
GS
V
= 10 V
GS
V
GS
= 6.5 V
V
= 6 V
GS
V
GS
= 7 V
V
GS
= 8 V
V
= 5.5 V
GS
V
GS
= 10 V
PULSE DURATION = 80
μ
s
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
50
100
150
200
250
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
12
1.8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 19 A
I
D
= 19 A
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= 10 V
9
6
3
0
T
J
= 125
o
C
T
J
= 25
o
C
5
6
7
8
9
10
-75 -50 -25
0
25 50 75
100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
300
250
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
100
200
150
100
50
10
T
J
= 150
o
C
V
DS
= 5 V
1
T
J
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= 25
o
C
T
J
= -55
o
C
0.01
T
J
= -55
o
C
0
0.001
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMS86300 Rev.1.4
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
10000
1000
100
10
I
D
= 19 A
C
iss
V
DD
= 40 V
8
V
DD
= 30 V
V
DD
= 50 V
C
oss
6
4
2
0
C
rss
f = 1 MHz
= 0 V
V
GS
1
0.1
0
10
20
30
40
50
60
70
80
1
10
80
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
140
105
70
100
V
GS
= 10 V
T
J
= 25
o
C
T
J
= 100
o
C
10
V
GS
= 6 V
T
J
= 125
o
C
35
R
θ
JC
= 1.2
o
C/W
0
25
1
0.01
50
75
100
125
150
0.1
1
10
100
500
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
20000
SINGLE PULSE
R
θ
JC
= 1.2
o
C/W
10000
C
= 25
o
C
10
μ
s
T
THIS AREA IS
LIMITED BY r
DS(on)
1000
100
μ
s
SINGLE PULSE
T
J
= MAX RATED
1
1 ms
R
θ
JC
= 1.2
o
C/W
C
= 25
o
C
10 ms
100
50
CURVE BENT TO
MEASURED DATA
T
100 ms/DC
0.1
0.1
10
-5
10
-4
10
-3
t, PULSE WIDTH (sec)
10
-2
10
-1
1
1
10
100 500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDMS86300 Rev.1.4
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
0.01
Z
(t) = r(t) x R
= 1.2 °C/W
θ
JC
θ
JC
R
θ
JC
SINGLE PULSE
Peak T
= P
x Z
(t) + T
θ
JC
C
J
DM
Duty Cycle, D = t
/ t
1
2
0.001
10
-5
10
-4
10
-3
t, RECTANGULAR PULSE DURATION (sec)
10
-2
10
-1
1
Figure 13.
Junction-to-Case Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS86300 Rev.1.4
5
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE
STANDARD REFERENCE:
JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS
DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL
DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M-2009.
E. IT
IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP
OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
