onsemi-NVF5P03T3G
| Part # | onsemi-NVF5P03T3G |
Download  | onsemi-NVF5P03T3G |
NTF5P03, NVF5P03
P-Channel, SOT-223
-5.2 A, -30 V
Features
•
Ultra Low R
•
Higher Efficiency Extending Battery Life
•
Logic Level Gate Drive
•
Miniature SOT
−
223 Surface Mount Package
•
Avalanche Energy Specified
•
AEC
−
Q101 Qualified and PPAP Capable
−
NVF5P03T3G
•
These Devices are Pb
−
Free and are RoHS Compliant
DS(on)
−
5.2 AMPERES,
−
30 VOLTS
R
DS(on)
= 100 m
W
S
G
Applications
•
DC
−
DC Converters
•
Power Management
•
Motor Controls
•
Inductive Loads
•
Replaces MMFT5P03HD
D
P
−
Channel MOSFET
MARKING
DIAGRAM
4
& PIN
ASSIGNMENT
1
Drain
2
4
3
SOT
−
223
CASE 318E
STYLE 3
AYM
5P03
G
G
1
2
3
Gate Drain Source
A
Y
M
= Assembly Location
=
Y
e
ar
= Date Code
5P03 =
Specific Device Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
4000 /
T
a
pe &
Reel
SOT
−
223
(Pb
−
Free)
NTF5P03T3G
4000 /
T
a
pe &
Reel
SOT
−
223
(Pb
−
Free)
NVF5P03T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2019
−
Rev. 6
NTF5P03T3/D
NTF5P03, NVF5P03
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Negative sign for P
−
Channel devices omitted for clarity
Rating
Symbol
Max
−
30
−
30
20
Unit
V
Drain
−
to
−
Source Voltage
V
DSS
DGR
Drain
−
to
−
Gate Voltage (R
= 1.0 M
W
)
V
V
GS
Gate
−
to
−
Source Voltage
−
Continuous
V
GS
V
1 sq in
Thermal Resistance
−
Junction to Ambient
R
40
3.13
25
−
5.2
−
4.1
−
26
°
C/W
Watts
mW/
°
C
A
THJA
D
FR
−
4 or G
−
10 PCB
T
o
tal Power Dissipation @ T
= 25
°
C
P
A
Linear Derating Factor
Drain Current
−
Continuous @ T
= 25
°
C
I
I
A
D
D
10 seconds
Continuous @ T
= 70
°
C
A
A
I
A
DM
Minimum
Thermal Resistance
−
Junction to Ambient
R
80
°
C/W
Watts
mW/
°
C
A
THJA
D
FR
−
4 or G
−
10 PCB
P
1.56
12.5
−
3.7
−
2.9
−
19
T
o
tal Power Dissipation @ T
= 25
°
C
A
Linear Derating Factor
I
D
I
D
Drain Current
−
Continuous @ T
= 25
°
C
A
10 seconds
A
Continuous @ T
= 70
°
C
A
I
A
DM
Operating and Storage
T
e
mperature Range
Single Pulse Drain
−
to
−
Source Avalanche Energy
−
Starting T
= 25
°
C
T , T
−
55 to 150
°
C
J
stg
E
AS
mJ
J
250
(V =
−
30 Vdc, V
=
−
10 Vdc, Peak I
=
−
12 Apk, L = 3.5 mH, R
= 25
W
)
DD
GS
L
G
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive
rating; pulse width limited by maximum junction temperature.
2
NTF5P03, NVF5P03
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Vdc
mV/
°
C
m
Adc
(V =
0 Vdc, I
=
−
250
m
Adc)
T
e
mperature Coefficient (Positive)
(BR)DSS
−
30
−
−
28
−
−
GS
D
−
Zero Gate Voltage Drain Current
I
DSS
(V =
−
24 Vdc, V
= 0 Vdc)
−
−
−
−
−
1.0
−
25
DS
GS
(V =
−
24 Vdc, V
= 0 Vdc, T
= 125
°
C)
DS
GS
J
Gate
−
Body Leakage Current
(V 20
Vdc, V
= 0 Vdc)
I
−
−
100
nAdc
GSS
=
GS
DS
V
R
Vdc
mV/
°
C
m
W
GS(th)
−
1.0
−
1.75
−
3.0
(V =
V ,
I =
−
250
m
Adc)
DS
GS D
−
3.5
−
Threshold
T
e
mperature Coefficient (Negative)
DS(on)
−
76
107
100
150
(V =
−
10 Vdc, I
=
−
5.2 Adc)
GS
D
(V =
−
4.5 Vdc, I
=
−
2.6Adc)
GS
D
g
2.0
3.9
−
Mhos
pF
(V =
−
15 Vdc, I
=
−
2.0 Adc)
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V =
−
25 Vdc, V
= 0 V,
C
−
−
−
500
153
58
950
440
140
DS
GS
iss
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
C
rss
Turn
−
On Delay Time
Rise Time
(V =
−
15 Vdc, I
=
−
4.0 Adc,
t
d(on)
−
−
−
−
−
−
−
−
−
−
−
−
10
33
38
20
16
45
23
24
15
1.6
3.5
2.6
24
48
94
92
38
110
60
80
38
−
ns
ns
DD
D
V
=
−
10 Vdc,
GS
t
r
R
G
Turn
−
Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn
−
On Delay Time
Rise Time
(V =
−
15 Vdc, I
=
−
2.0 Adc,
DD
D
d(on)
V
G
=
−
10 Vdc,
GS
t
r
R
Turn
−
Off Delay Time
Fall Time
d(off)
t
f
Gate Charge
(V =
−
24 Vdc, I
=
−
4.0 Adc,
Q
T
Q
1
Q
2
nC
DS
GS
D
V
−
Q3
−
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Forward On
−
Voltage
(I =
−
4.0 Adc, V
= 0 Vdc)
V
SD
Vdc
ns
S
GS
(I =
−
4.0 Adc, V
= 0 Vdc,
−
−
−
1.1
−
1.5
S
GS
−
0.89
−
J
Reverse Recovery Time
(I =
−
4.0 Adc, V
= 0 Vdc,
t
rr
−
−
−
−
34
20
−
−
−
−
S
GS
S
t
a
b
t
14
Reverse Recovery Stored Charge
Q
0.036
m
C
RR
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
3. Switching
characteristics are independent of operating junction temperatures.
4. Reflects
typical values.
Max limit
*
Typ
3
SIGMA
Cpk
+
Ť
Ť
3
NTF5P03, NVF5P03
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
3
2
1
0
10
−
3.9 V
−
6 V
−
8 V
V
≥
−
10 V
T =
25
°
C
DS
J
−
3.7 V
9
8
7
6
5
4
3
2
1
0
−
4.1 V
−
10 V
−
4.3 V
−
4.5 V
−
3.5 V
−
3.1 V
−
2.8 V
T =
25
°
C
J
T =
100
°
C
J
V
=
−
2.7 V
GS
T =
−
55
°
C
J
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2
2.5
3
3.5
GATE
−
TO
−
SOURCE VOLTAGE (V)
GS,
4
4.5
5
−
V DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS,
−
V
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
T =
25
°
C
J
I
=
−
5.2 A
D
T =
25
°
C
J
V
=
−
4.5 V
=
−
10 V
GS
V
GS
3
4
5
6
7
8
9
10
1
2.5
4
5.5
7
8.5
10
−
V
GS,
GATE
−
TO
−
SOURCE VOLTAGE (V)
−
I DRAIN
CURRENT (A)
D,
Figure 3. On
−
Resistance versus
Gate
−
to
−
Source Voltage
Figure 4. On
−
Resistance versus Drain Current
and Gate Voltage
1000
100
10
1.65
1.55
1.45
1.35
1.25
1.15
1.05
0.95
0.85
0.75
0.65
V
GS
= 0 V
I
V
=
−
5.2 A
D
=
−
10 V
GS
T =
125
°
C
J
T =
100
°
C
J
−
50
−
25
0
25
50
75
100
125
150
5
10
15
20
25
30
−
V
DS,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 6. Drain
−
to
−
Source Leakage Current
Figure 5. On
−
Resistance Variation with
versus Voltage
Temperature
4
NTF5P03, NVF5P03
TYPICAL ELECTRICAL CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
12.5
25
T =
25
°
C
GS
J
V
−
V
DS
= 0 V
Q
T
10
7.5
5.0
2.5
20
15
10
5
C
C
−
V
GS
iss
Q
Q
2
1
I
=
−
2 A
D
oss
rss
T =
25
°
C
J
C
0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
1000
V
=
−
15 V
=
−
4.0 A
=
−
10 V
DD
V
= 0 V
GS
I
D
T =
25
°
C
J
V
GS
t
d(off)
t
f
100
10
t
r
t
d(on)
0.5 0.55
0.6 0.65
0.7 0.75
0.8 0.85
0.9 0.95
1
1
10
R ,
GATE RESISTANCE (
W
)
100
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
250
200
150
100
50
V
= 20 V
GS
I
=
−
6 A
D
SINGLE PULSE
= 25
°
C
T
C
dc
1
10 ms
1 ms
100
m
s
0.1
R
LIMIT
DS(on)
10
m
s
THERMAL LIMIT
PACKAGE LIMIT
0
0.01
0.1
1
10
100
25
50
75
100
125
150
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5
NTF5P03, NVF5P03
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1
″
PAD)
q
JA
0.05
0.1
0.0175
W
0.0710
W
0.2706
W
0.5779
W
0.7086
W
0.0154 F
0.0854 F
0.3074 F
1.7891 F
107.55 F
AMBIENT
0.02
CHIP
JUNCTION
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 13. FET Thermal Response
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1.
ANODE
STYLE 3:
STYLE 4:
PIN 1.
SOURCE
STYLE 5:
PIN 1.
DRAIN
PIN 1.
GATE
2. DRAIN
2. CATHODE
3. NC
2. DRAIN
3. GATE
4. DRAIN
2. GATE
3. SOURCE
4. DRAIN
3. SOURCE
4. GATE
4. CATHODE
STYLE 6:
PIN 1.
RETURN
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
ANODE 1
2. CATHODE
3. ANODE
2
CANCELLED
PIN 1.
INPUT
2. GROUND
3. LOGIC
PIN 1.
CATHODE
2. ANODE
2. INPUT
3. OUTPUT
4. INPUT
3. GATE
4. CATHODE
4. GROUND
4. ANODE
STYLE 11:
PIN 1.
MT 1
STYLE 12:
STYLE 13:
PIN 1.
INPUT
2. OUTPUT
3. NC
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. MT
2
3. GATE
4. MT
2
4. OUTPUT
GENERIC
MARKING DIAGRAM*
AYW
XXXXX
G
G
1
A
Y
= Assembly Location
=
Y
e
ar
W
= Work Week
XXXXX =
Specific Device Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
