onsemi-NVH4L018N075SC1
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DATA SHEET
MOSFET
– 13.5 mohm,
750ꢀV, M2, TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
750 V
18 m
ꢀ
@ 18 V
140 A
D
NVH4L018N075SC1
Features
G
•
Typ. R
= 13.5 m
ꢀ
@ V
= 18 V
GS
= 18 m
ꢀ
@ V
= 15 V
GS
DS(on)
S1: Driver Source
S2: Power Source
Typ. R
DS(on)
S1
S2
•
Ultra Low Gate Charge (Q
= 262 nC)
G(tot)
N
−
CHANNEL MOSFET
•
High Speed Switching with Low Capacitance (C
= 365 pF)
oss
•
100% Avalanche Tested
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb
−
Free 2LI (on second level interconnection)
Typical Applications
D
S2
•
Automotive On Board Charger
•
Automotive DC-DC Converter for EV/HEV
•
Automotive Traction Inverter
S1
G
TO247
−
4L
CASE 340CJ
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
Unit
V
DSS
750
V
V
V
Gate
−
to
−
Source Voltage
V
GS
−
8/+22
−
5/+18
H4L018
N075SC
AYWWZZ
Recommended Operation Values
of Gate
−
to
−
Source Voltage
T
< 175
°
C
= 25
°
C
V
GSop
C
Continuous Drain
Steady
State
T
I
D
140
500
99
A
W
A
C
Power Dissipation
P
D
Continuous Drain
Steady
State
T
C
= 100
°
C
I
D
H4L018N075SC = Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
Power Dissipation
P
250
483
807
W
A
D
WW =
Work Week
ZZ
= Lot Traceability
Pulsed Drain Current
T
= 25
°
C
I
DM
C
Single Pulse Surge
Drain Current Capability
T =
25
°
C, t
= 10
ꢁ
s,
I
A
A
p
DSC
ORDERING INFORMATION
R
= 4.7
ꢀ
G
Device
NVH4L018N075SC1
Package
Shipping
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
+175
TO247
−
4L
30 Units /
Tube
Source Current (Body Diode)
I
S
108
162
A
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
L(pk)
Maximum Lead
T
e
mperature for Soldering
(1/8
″
from case for 5 s)
T
L
300
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive
rating, limited by max junction temperature.
3. EAS
of 162 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 18 A,
J
AS
V
DD
= 50
V
, V
=
1
8
V
.
GS
©
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2022
−
Rev. 4
NVH4L018N075SC1/D
NVH4L018N075SC1
Table 1. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Max
0.3
40
Unit
°
C/W
R
ꢂ
JC
R
ꢂ
JA
4. The
entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
Table 2. ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A
750
−
−
−
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
I =
1 mA, referenced to 25
°
C
D
−
0.06
V/
°
C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0
V
,
T =
25
°
C
−
−
−
−
−
−
10
1
ꢁ
A
mA
nA
DSS
GS
DS
J
= 750 V
T =
175
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
V
= +18/
−
5
V
, V
= 0 V
250
GSS
GS
DS
V
R
= V
, I
= 22 mA
1.8
−
5
−
2.7
−
4.3
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
+18
GOP
V
GS
V
GS
V
GS
V
DS
= 15
V
, I
=
6
6 A, T
= 25
°
C
18
m
ꢀ
DS(on)
D
J
= 18
V
, I
=
6
6 A, T
= 25
°
C
−
13.5
19
18
D
J
= 18
V
, I
=
6
6 A, T
= 175
°
C
D
J
Forward Transconductance
g
FS
= 10
V
, I
=
6
6 A
−
40
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 375 V
−
−
−
−
−
−
−
5010
365
31
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
D
=
−
5/18
V
, V
=
6
00
V
,
262
75
G(TOT)
GS
DS
I
= 66 A
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate
−
Resistance
Q
Q
GS
72
GD
R
f = 1 MHz
1.6
ꢀ
G
SWITCHING CHARACTERISTICS, VGS = 10 V
Turn
−
On Delay Time
t
V
D
=
−
5/18
V
, V
=
4
00
V
,
−
−
−
−
−
−
−
24
24
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 66 A, R
= 2.2
ꢀ
G
Rise Time
t
r
Inductive load
Turn
−
Off Delay Time
t
46
d(OFF)
Fall Time
t
f
9.6
144
207
351
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
ON
ꢁ
J
E
OFF
E
tot
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Continuous Source
−
Drain Diode Forward
I
V
V
=
−
5
V
, T
=
2
5
°
C
−
−
−
−
−
108
483
−
A
V
SD
GS
J
Current
Pulsed Drain
−
Source Diode Forward
I
SDM
Forward Diode Voltage
V
=
−
5
V
, I
=
6
6 A, T
= 25
°
C
4.5
SD
GS
SD
J
2
NVH4L018N075SC1
J
Parameter
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
=
−
5/18
V
, I
=
6
6 A,
−
−
−
−
−
−
28
221
19
−
−
−
−
−
−
ns
nC
ꢁ
J
A
RR
GS
S
SD
dI /dt
= 1000 A/
ꢁ
s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
16
RRM
Ta
17
ns
ns
Discharge Time
Tb
11
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NVH4L018N075SC1
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
4
V
GS
= 18 V
15 V
3
V
GS
= 12 V
12 V
2
15 V
18 V
10 V
1
9 V
40
8 V
0
0
0
2
4
6
8
10
0
40
80
120
160
200
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
150
120
90
60
30
0
I
= 66 A
I
V
= 66 A
D
D
= 18 V
GS
T =
150
°
C
J
T =
25
°
C
J
3
6
9
12
15
18
−
75
−
50
−
25
0
25 50 75
100 125 150 175
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
280
100
280
240
200
160
120
80
V
=
−
5 V
V
DS
= 10 V
GS
T =
175
°
C
J
T =
25
°
C
J
T =
175
°
C
10
1
J
T =
−
55
°
C
J
T =
25
°
C
J
40
T =
−
55
°
C
J
0
2
4
6
8
0
4
8
12
16
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
4
NVH4L018N075SC1
TYPICAL CHARACTERISTICS
(continued)
20
15
10
5
10000
C
I
D
= 66 A
iss
V
= 450 V
DD
V
= 750 V
DD
1000
100
10
C
oss
V
= 600 V
DD
0
C
rss
f = 1 MHz
= 0 V
V
GS
−
5
0
50
100
150
200
250
300
750
0.1
1
10
100
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Figure 8. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
150
120
90
60
30
0
100
10
1
V
= 18 V
GS
R
= 0.30
°
C/W
ꢂ
JC
0.001
0.01
0.1
1
25
50
75
100
125
150
175
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100000
10000
1000
1000
Single Pulse
R
= 0.30
°
C/W
ꢂ
JC
10
ꢁ
s
T
C
= 25
°
C
100
10
1
100
ꢁ
s
1 ms
Single Pulse
T =
Max Rated
10 ms
J
DC
R
= 0.3
°
C/W
ꢂ
JC
T
= 25
°
C
C
100
0.1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
NVH4L018N075SC1
TYPICAL CHARACTERISTICS
(continued)
1
0.1
50% Duty Cycle
20%
10%
5%
Notes:
= 0.30
°
C/W
2%
P
DM
0.01
0.001
R
ꢂ
JC
Duty Cycle, D = t
/t
1
2
1%
Single Pulse
t
1
t
2
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction
−
to
−
Case Thermal Response
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO
−
247
−
4LD
PAGE 1 OF 1
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