onsemi-NVH4L045N065SC1
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DATA SHEET
MOSFET
– 33 mohm,
650ꢀV,ꢀM2, TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
50 m
ꢀ
@ 18 V
55 A
D
NVH4L045N065SC1
Features
G
•
Typ. R
= 33 m
ꢀ
@ V
= 18 V
GS
= 45 m
ꢀ
@ V
= 15 V
GS
DS(on)
S1: Kelvin Source
S2: Power Source
Typ. R
DS(on)
•
Ultra Low Gate Charge (Q
= 105 nC)
G(tot)
S1 S2
•
High Speed Switching with Low Capacitance (C
= 162 pF)
oss
N
−
CHANNEL MOSFET
•
100% Avalanche Tested
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb
−
Free 2LI (on second level interconnection)
Typical Applications
D
•
Automotive On Board Charger
•
Automotive DC
−
DC Converter for EV/HEV
S2
S1
G
TO247
−
4L
CASE 340CJ
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
Unit
MARKING DIAGRAM
V
DSS
650
V
V
V
Gate
−
to
−
Source Voltage
V
GS
−
8/+22
−
5/+18
Recommended Operation Values
of Gate
−
to
−
Source Voltage
T
< 175
°
C
= 25
°
C
V
GSop
C
H4L045
065SC1
AYWWZZ
Continuous Drain
Steady
State
T
I
D
55
187
39
A
W
A
C
Power Dissipation
P
D
Continuous Drain
Steady
State
T
C
= 100
°
C
I
D
H4L045065SC1 = Specific Device Code
Power Dissipation
P
D
94
W
A
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
Pulsed Drain Current
T
= 25
°
C
I
197
315
C
DM
ZZ
= Lot Traceability
Single Pulse Surge
Drain Current Capability
T =
25
°
C, t
= 10
ꢁ
s,
A
I
A
p
DSC
ORDERING INFORMATION
R
= 4.7
ꢀ
G
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
Device
NVH4L045N065SC1
Package
Shipping
J
stg
+175
TO247
−
4L
30 Units /
Tube
Source Current (Body Diode)
I
S
45
72
A
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
L(pk)
Maximum Lead
T
e
mperature for Soldering
(1/8
″
from case for 5 s)
T
L
300
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. JA
is constant value to follow guide table of LV/HV discrete final datasheet
generation.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive
rating, limited by max junction temperature.
4. EAS
of 72 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 12 A,
J
AS
V
DD
= 50
V
, V
=
1
8
V
.
GS
©
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2022
−
Rev. 1
NVH4L045N065SC1/D
NVH4L045N065SC1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Max
0.8
40
Unit
R
°
C/W
ꢂ
JC
R
ꢂ
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A
650
−
−
−
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
I =
20 mA, referenced to 25
°
C
D
−
0.15
V/
°
C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0
V
,
T =
25
°
C
−
−
−
−
−
−
10
1
ꢁ
A
mA
nA
DSS
GS
DS
J
= 650 V
T =
175
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
V
= +18/
−
5
V
, V
= 0 V
250
GSS
GS
DS
V
R
= V
, I
= 8 mA
1.8
−
5
−
2.8
−
4.3
+18
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
GOP
V
GS
V
GS
V
GS
V
DS
= 15
V
, I
=
2
5 A, T
= 25
°
C
45
33
41
16
m
ꢀ
DS(on)
D
J
= 18
V
, I
=
2
5 A, T
= 25
°
C
−
50
−
D
J
= 18
V
, I
=
2
5 A, T
= 175
°
C
−
D
J
Forward Transconductance
g
= 10
V
, I
=
2
5 A
−
−
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 325 V
−
−
−
−
−
−
−
1870
162
14
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
D
=
−
5/18
V
, V
=
5
20
V
,
105
27
G(TOT)
GS
DS
I
= 25 A
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate
−
Resistance
Q
Q
GS
30
GD
R
f = 1 MHz
3.1
ꢀ
G
SWITCHING CHARACTERISTICS, VGS = 10 V
Turn
−
On Delay Time
t
V
V
D
R
=
−
5/18
V
,
−
−
−
−
−
−
−
13
14
26
7
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
= 400
V
,
Rise Time
t
r
I
= 25 A,
= 2.2
ꢀ
G
Turn
−
Off Delay Time
t
d(OFF)
inductive load
Fall Time
t
f
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
ON
47
33
80
ꢁ
J
E
OFF
E
tot
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Continuous Drain
−
Source Diode Forward
I
V
V
=
−
5
V
, T
=
2
5
°
C
−
−
−
−
−
45
197
−
A
V
SD
GS
J
Current
Pulsed Drain
−
Source Diode Forward
I
SDM
Forward Diode Voltage
V
=
−
5
V
, I
=
2
5 A, T
= 25
°
C
4.4
SD
GS
SD
J
2
NVH4L045N065SC1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified) (continued)
J
Parameter
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
=
−
5/18
V
, I
=
2
5 A,
−
−
−
−
−
−
20
108
4.5
11
−
−
−
−
−
−
ns
nC
ꢁ
J
A
RR
GS
S
SD
dI /dt
= 1000 A/
ꢁ
s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
RRM
Ta
11
ns
ns
Discharge Time
Tb
8.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NVH4L045N065SC1
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
4
V
= 18 V
GS
15 V
3
V
GS
= 12 V
12 V
2
15 V
18 V
10 V
1
9 V
8 V
0
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
1.4
1.3
1.2
1.1
1
140
120
100
80
I
D
= 25 A
I
V
= 25 A
D
= 18 V
GS
T =
25
°
C
J
T =
150
°
C
J
60
40
0.9
0.8
20
0
7
8
9
10 11 12 13 14 15 16 17 18
−
75
−
50
−
25
0
25 50 75
100 125 150 175
T , JUNCTION TEMPERATURE (
°
C)
J
V
, GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
120
100
120
100
80
60
40
20
0
V
GS
=
−
5 V
V
DS
= 10 V
T =
175
°
C
J
T =
25
°
C
J
T =
25
°
C
J
10
T =
175
°
C
J
T =
−
55
°
C
J
T =
−
55
°
C
J
1
2
3
4
5
6
7
8
3
6
9
12
15
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
4
NVH4L045N065SC1
TYPICAL CHARACTERISTICS
(continued)
20
15
10
5
10000
I
D
= 25 A
V
= 390 V
DD
C
iss
1000
100
10
V
DD
= 520 V
C
oss
V
= 650 V
DD
C
rss
0
f = 1 MHz
= 0 V
V
GS
−
5
1
0.1
0
20
40
60
80
100
120
1
10
100
650
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Figure 8. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
100
10
1
60
50
40
30
20
10
0
V
= 18 V
GS
T =
25
°
C
J
R
= 0.8
°
C/W
ꢂ
JC
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
300
100
20000
10000
Single Pulse
10
ꢁ
s
R
= 0.8
°
C/W
ꢂ
JC
T
C
= 25
°
C
100
ꢁ
s
10
1
1 ms
1000
100
10 ms
Single Pulse
T =
175
°
C
J
DC
R
= 0.8
°
C/W
ꢂ
JC
T
C
= 25
°
C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
NVH4L045N065SC1
TYPICAL CHARACTERISTICS
(continued)
1
0.1
0.5 Duty Cycle
0.2
0.1
0.05
0.02
0.01
Notes:
= 0.8
°
C/W
Duty Cycle, D = t
/t
P
DM
0.01
0.001
R
ꢂ
Single Pulse
JC
1
2
t
1
t
2
0.00001
0.0001
0.001
t, RECTANGULAR PULSE DURATION (sec)
0.01
0.1
Figure 13. Junction
−
to
−
Case Thermal Response
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO
−
247
−
4LD
PAGE 1 OF 1
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