onsemi-NVHL080N120SC1
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N-Channel
1200
V
,
8
0 m
W
, 31 A
NVHL080N120SC1
Features
•
Typ. R
= 80 m
W
•
Ultra Low Gate Charge (typ. Q
DS(on)
= 56 nC)
G(tot)
•
Low Effective Output Capacitance (typ. C
= 80 pF)
oss
V
R
MAX
I MAX
D
•
100% UIL Tested
(BR)DSS
DS(on)
•
Qualified According to AEC
−
Q101
1200 V
110 m
W
@ 20 V
31 A
•
These Devices are RoHS Compliant
Typical Applications
N
−
CHANNEL MOSFET
•
Automotive On Board Charger
•
Automotive DC/DC converter for EV/HEV
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
1200
Unit
V
G
V
DSS
Gate
−
to
−
Source Voltage
V
−
15/+25
−
5/+20
V
GS
Recommended Opera-
tion Values of Gate
−
to
−
Source Voltage
T
C
< 175
°
C
V
GSop
V
S
Continuous Drain
Current R
Steady
State
T
C
= 25
°
C
I
D
31
A
q
JC
Power Dissipation R
P
178
22
W
A
q
D
JC
JC
Continuous Drain
Current R
Steady
State
T
= 100
°
C
I
D
C
G
D
q
JC
S
Power Dissipation R
P
D
89
W
A
TO
−
247
−
3LD
q
CASE 340CX
Pulsed Drain Current
T =
25
°
C
A
I
132
DM
MARKING DIAGRAM
Single Pulse Surge Drain
T =
25
°
C, t
= 10
m
s,
I
132
A
A
p
DSC
Current Capability
R
= 4.7
W
G
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
Source Current (Body Diode)
I
18
A
S
$Y&Z&3&K
NVHL080
N120SC1
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
171
mJ
Energy (I
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
Parameter
Symbol
Value
0.84
40
Unit
°
C/W
°
C/W
&Z
&3
&K
R
q
JC
R
q
JA
NVHL080N120SC1 = Specific Device Code
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive
rating, limited by max junction temperature.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
3. E
of 171 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 18.5 A,
AS
DD
J
AS
V
= 120 V, V
= 18 V.
GS
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
April, 2020
−
Rev. 3
NVHL080N120SC1/D
NVHL080N120SC1
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
I
D
= 1 mA, referenced to 25
_
C
−
700
mV/
_
C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
1
V
= 0
V
, V
= 1200 V, T
= 25
_
C
m
A
mA
m
A
DSS
GS
DS
J
V
GS
= 0
V
, V
= 1200 V, T
= 175
_
C
DS
J
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= +25/
−
15 V, V
= 0 V
1
GSS
DS
Gate Threshold Voltage
V
R
V
= V
, I
= 5 mA
1.8
−
5
−
2.7
−
4.3
+20
110
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
GOP
V
= 20
V
, I
=
2
0 A, T
= 25
_
C
80
114
13
m
W
DS(on)
GS
D
J
V
GS
= 20
V
, I
=
2
0 A, T
= 150
_
C
−
D
J
Forward Transconductance
g
FS
V
= 20
V
, I
=
2
0 A
−
−
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
V
= 0
V
, f = 1
M
Hz, V
= 800 V
−
−
−
−
−
−
−
1112
80
−
−
−
−
−
−
−
pF
ISS
GS
DS
C
OSS
RSS
C
6.5
56
Q
V
=
−
5/20 V, V
= 600 V, I
= 20 A
nC
G(tot)
GS
DS
D
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate Resistance
Q
11
GS
Q
12
GD
R
f = 1 MHz
1.7
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
GS
I
=
−
5/20 V, V
= 800 V,
−
−
−
−
−
−
−
13
20
−
−
−
−
−
−
−
ns
d(on)
DS
= 20 A, R
= 4.7
W
,
D
G
t
r
Inductive Load
Turn
−
Off Delay Time
Fall Time
22
d(off)
t
f
10
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
E
258
52
m
J
ON
OFF
TOT
E
E
311
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Continuous Drain
−
to
−
Source Diode
I
V
V
=
−
5
V
, T
=
2
5
_
C
−
−
−
−
18
A
A
SD
GS
J
Forward Current
Pulsed Drain
−
to
−
Source Diode For-
I
=
−
5
V
, T
=
2
5
_
C
132
SDM
GS
J
Forward Diode Voltage
V
V
=
−
5
V
, I
= 10 A, T
= 25
_
C
−
−
−
−
−
4
16
62
5
−
−
−
−
−
V
ns
nC
m
J
A
SD
GS
SD
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
t
V
=
−
5/20
V
, I
=
2
0 A,
RR
GS SD
dI /dt
= 1000 A/
m
s
S
Q
RR
E
REC
RRM
I
8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NVHL080N120SC1
TYPICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted
J
70
56
42
28
14
0
8
V
GS
= 20 V
V
GS
= 8 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 15 V
V
GS
= 19 V
GS
= 18 V
V
GS
= 16 V
GS
= 17 V
V
6
V
GS
= 10 V
V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
4
2
0
V
GS
= 18 V
V
GS
= 17 V
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 16 V
V
GS
= 15 V
V
GS
= 20 V
V
GS
= 19 V
0
4
8
12
16
20
0
10
20
30
40 50
60 70
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
450
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
I
D
= 20 A
V
GS
= 20 V
360
270
180
90
I
D
= 20 A
T
J
= 15
0
o
C
T
J
= 25
o
C
0
−
75
−
50
−
25
0
25 50 75 100
125 150 175
8
10
12
14
16
18
20
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Voltage
70
56
42
28
14
0
100
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T
J
= 150
o
C
V
DS
= 20 V
T
J
= 2
5
o
C
10
1
T
J
= 175
o
C
T
J
=
−
55
o
C
T
J
= 25
o
C
T
J
=
−
55
o
C
0.1
0
3
6
9
12
15
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source
−
to
−
Drain Diode Forward
Voltage vs. Source Current
3
NVHL080N120SC1
TYPICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted
J
20
15
10
5
10000
I
D
= 20 A
C
iss
V
DD
= 400 V
1000
V
DD
= 600 V
C
oss
V
DD
= 800 V
100
C
rss
10
f = 1 MHz
V
GS
= 0 V
1
0.1
0
0
10
20
30
40
50
60
1
10
100
800
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
−
to
−
Source
Voltage
30
10
40
30
20
10
0
R
q
JC
= 0.84
o
C/W
T
J
= 25
o
C
V
GS
= 20 V
T
J
= 150
o
C
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
T
C
,
CASE TEMPERATURE
(
o
C
)
t
A
V
, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
50000
10000
SINGLE PULSE
q
JC
= 0.8
4
o
C/W
C
= 2
5
o
C
R
100
10
T
10
m
s
THIS AREA IS
LIMITED BY r
DS(on)
100
m
s
1
1000
100
SINGLE PULSE
T
J
= MAX RATED
q
JC
= 0.8
4
o
C/W
1 ms
10 ms
0.1
R
100 ms
T
C
= 25
o
C
0.01
0.1
1
10
100
1000 5000
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
NVHL080N120SC1
TYPICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted
J
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
0.01
Z
R
(t) = r(t) x R
o
q
JC
q
JC
= 0.84
C/W
SINGLE PULSE
q
JC
Peak T
= P
x Z
(t) + T
J
DM
q
JC
C
Duty Cycle, D = t
/ t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction
−
to
−
Case Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NVHL080N120SC1
NVHL080N120SC1
TO
−
247
Long Lead
Tube
N/A
N/A
30 Units
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO
−
247
−
3LD
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
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