onsemi-NVHL160N120SC1
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DATA SHEET
MOSFET
– 160 mohm,
1200ꢀV, M1, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
224 m
ꢀ
@ 20 V
17 A
N
−
CHANNEL MOSFET
NVHL160N120SC1
Features
D
•
Typ. R
= 160 m
ꢀ
•
Ultra Low Gate Charge (typ. Q
DS(on)
= 34 nC)
G(tot)
•
Low Effective Output Capacitance (typ. C
= 50 pF)
oss
G
•
100% UIL Tested
•
AEC
−
Q101 Qualified and P
P
A
P Capable
S
•
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb
−
Free 2LI (on second level interconnection)
Typical Applications
•
Automotive On Board Charger
•
Automotive DC
−
DC Converter for EV/HEV
G
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
S
J
TO
−
247
−
3LD
CASE 340CX
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
Unit
V
DSS
1200
−
15/+25
−
5/+20
V
V
V
Gate
−
to
−
Source Voltage
V
GS
MARKING DIAGRAM
Recommended Opera-
tion Values of Gate
−
to
−
Source Voltage
T
C
< 175
°
C
V
GSop
Continuous Drain
Current
Steady
State
T
= 25
°
C
I
17
A
C
D
&Z&3&K
NVHL160
N120SC1
Power Dissipation
P
119
12
W
A
D
Continuous Drain
Current
Steady
State
T
C
= 100
°
C
I
D
Power Dissipation
P
59
69
W
A
D
Pulsed Drain Current
T =
25
°
C
A
I
DM
Single Pulse Surge Drain
T =
25
°
C, t
= 10
ꢁ
s,
I
140
A
A
p
DSC
&Z
&3
&K
= Assembly Plant Code
= Date Code (
Y
e
ar & Week)
= Lot
Current Capability
R
= 4.7
ꢀ
G
Operating Junction and Storage
T
e
mperature
Range
T , T
J
−
55 to
+175
°
C
stg
NVHL160N120SC1 = Specific Device Code
Source Current (Body Diode)
I
S
11
A
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
128
mJ
ORDERING INFORMATION
Energy (I
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
Package
Shipping
30 Units /
Tube
TO247
−
3L
NVHL160N120SC1
THERMAL CHARATERISTICS
Parameter
Symbol
Value
1.3
Unit
°
C/W
°
C/W
R
ꢂ
JC
R
40
ꢂ
JA
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive
rating, limited by max junction temperature.
3. E
of 128 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 16 A,
AS
DD
J
AS
V
= 120 V, V
= 18 V.
GS
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022
−
Rev. 2
NVHL160N120SC1/D
NVHL160N120SC1
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise stated)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
I
= 0
V
, I
= 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
= 1 mA, referenced to 25
_
C
−
600
mV/
_
C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
250
1
ꢁ
A
V
GS
V
GS
V
GS
= 0
V
, V
= 1200 V, T
= 25
_
C
DSS
DS
J
= 0
V
, V
= 1200 V, T
= 175
_
C
DS
J
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
= +25/
−
15 V, V
= 0 V
DS
ꢁ
A
GSS
Gate Threshold Voltage
V
R
V
= V
, I
= 2.5 mA
1.8
−
5
−
3.1
−
4.3
+20
224
377
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20
V
, I
=
1
2 A, T
= 25
_
C
162
271
3
m
ꢀ
DS(on)
D
J
= 20
V
, I
=
1
2 A, T
= 175
_
C
−
D
J
Forward Transconductance
g
FS
= 10
V
, I
=
1
2 A
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
V
= 0
V
, f = 1
M
Hz, V
= 800 V
−
−
−
−
−
−
−
−
665
50
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
GS
DS
C
OSS
RSS
C
5
Q
V
=
−
5/20 V, V
= 600 V, I
= 16 A
34
G(tot)
DS
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate Resistance
Q
6
G(th)
Q
12.5
9.6
1.4
GS
GD
Q
R
f = 1 MHz
ꢀ
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
=
−
5/20 V, V
= 800 V,
−
−
−
−
−
−
−
11
19
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 16 A, R
= 6
ꢀ
,
G
t
r
Inductive Load
Turn
−
Off Delay Time
Fall Time
15
d(off)
t
f
8
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
E
200
34
ꢁ
J
ON
OFF
TOT
E
E
234
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Continuous Drain
−
to
−
Source Diode
I
V
V
=
−
5
V
, T
=
2
5
_
C
−
−
−
−
11
69
A
A
SD
GS
J
Forward Current
Pulsed Drain
−
to
−
Source Diode
I
=
−
5
V
, T
=
2
5
_
C
SDM
GS
J
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
V
V
V
=
−
5
V
, I
= 6
A
, T
= 25
_
C
−
−
−
−
−
−
−
4
10
−
V
ns
nC
ꢁ
J
A
SD
GS
SD
J
t
=
−
5/20
V
, I
=
1
6 A,
15
45
3.9
6.2
7.4
7
RR
GS
S
SD
dI /dt
= 1000 A/
ꢁ
s
Q
−
RR
E
REC
−
I
−
RRM
Ta
−
ns
ns
Discharge Time
Tb
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NVHL160N120SC1
TYPICAL CHARACTERISTICS
50
40
30
20
4.0
10 V
V
= 12 V
GS
19 V
3.5
V
= 20 V
GS
15 V
18 V
16 V
3.0
2.5
2.0
1.5
17 V
17 V
18 V
16 V
19 V
15 V
12 V
10 V
V
GS
= 20 V
10
0
1.0
0.5
0
2
4
6
8
10
0
10
20
I ,
DRAIN CURRENT (A)
30
40
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
700
600
500
1.9
1.7
1.5
1.3
1.1
I =
12 A
D
I
V
= 12 A
D
= 20 V
GS
400
300
200
T =
150
°
C
J
T =
25
°
C
J
0.9
0.7
100
0
−
75
−
50
−
25
0
25 50 75
100 125 150 175
9
10 11 12 13 14 15 16 17 18
19 20
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
25
20
15
10
100
V
=
−
5 V
V
DS
= 20 V
GS
T =
25
°
C
J
T =
175
°
C
J
T =
25
°
C
J
10
5
0
T =
175
°
C
J
T =
−
55
°
C
T =
−
55
°
C
J
J
1
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
9
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
3
NVHL160N120SC1
TYPICAL CHARACTERISTICS
(continued)
10K
20
V
DD
= 400 V
I
D
= 16 A
15
10
5
V
= 800 V
C
DD
1K
iss
V
= 600 V
DD
100
C
oss
10
1
C
0
rss
f = 1 MHz
= 0 V
V
GS
−
5
0
10
20
Q ,
GATE CHARGE (nC)
30
40
0.1
1
10
100
800
175
0.1
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
g
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Figure 8. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
20
16
12
8
50
10
V
GS
= 20 V
T =
25
°
C
J
T =
150
°
C
J
4
0
R
= 1.3
°
C/W
ꢂ
JC
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
100K
10K
1K
Single Pulse
R
= 1.3
°
C/W
ꢂ
JC
= 25
°
C
T
C
10
ꢁ
s
10
1
100
ꢁ
s
This area is
limited by R
DS(on)
1 ms
10 ms
100 ms
Single Pulse
T =
Max Rated
0.1
100
10
J
R
= 1.3
°
C/W
ꢂ
JC
T
C
= 25
°
C
0.01
0.1
1
10
100
1K
5K
0.00001 0.0001
0.001
0.01
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
NVHL160N120SC1
TYPICAL CHARACTERISTICS
(continued)
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
1%
P
DM
Z
ꢂ
ꢂ
JC
JC
0.01
Single Pulse
R
= 1.3
°
C/W
ꢂ
JC
t
Peak T
= P
x Z
(t) + T
JC C
1
ꢂ
J
DM
Duty Cycle, D = t
/t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction
−
to
−
Ambient Thermal Response
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO
−
247
−
3LD
PAGE 1 OF 1
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