onsemi-NVMFD5C478NWFT1G
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NVMFD5C478N
Power MOSFET
40
V
,
1
7.0 m
W
, 27 A, Dual N
−
Channel
Features
•
Small Footprint (5 x 6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Capacitance to Minimize Driver Losses
•
NVMFD5C478NWF
−
Wettable Flanks Product
•
AEC
−
Q101 Qualified and P
P
A
P Capable
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
•
These Devices are Pb
−
Free and are RoHS Compliant
40 V
17.0 m
W
@ 10 V
27 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Dual
−
Channel
D1
D2
Gate
−
to
−
Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25
°
C
= 100
°
C
= 25
°
C
I
27
A
C
D
q
JC
T
C
19
Steady
State
G1
G2
Power Dissipation
T
C
P
23
W
A
D
R
q
JC
T
C
= 100
°
C
12
S1
S2
Continuous Drain
Current R
T =
25
°
C
A
I
D
9.8
6.9
3.1
1.5
90
q
JA
PIN CONNECTION &
MARKING DIAGRAM
T =
100
°
C
A
Steady
State
Power Dissipation
T =
25
°
C
A
P
W
D
D1 D1
1
R
q
JA
S1
G1
D1
D1
D2
D2
T =
100
°
C
A
1
XXXXXX
AYWZZ
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
A
DFN8, 5×6
(S08FL)
CASE 506BT
A
p
S2
G2
Operating Junction and Storage
T
e
mperature
T , T
−
55 to
+175
°
C
J
stg
D2 D2
XXXXXX = 5C478N (NVMFD5C478N) or
478NWF (NVMFD5C478NWF)
Source Current (Body Diode)
I
19
48
A
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
A
= Assembly Location
=
Y
e
ar
Energy (I
= 1.4 A)
L(pk)
Y
ZZ
WW
G
= Lot Traceability
= Work Week
= Pb
−
Free Package
Lead
T
e
mperature for Soldering Purposes
T
260
°
C
L
(1/8
″
from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
Parameter
Symbol
Value
6.5
Unit
R
R
°
C/W
q
JC
JA
48.8
q
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi
(
Y
) is used as required per JESD51
−
12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
4. Continuous
DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
December, 2018
−
Rev. 1
NVMFD5C478N/D
NVMFD5C478N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
GS
D
I
T =
25
°
C
10
m
A
DSS
J
V
= 0
V
,
= 40 V
GS
DS
V
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
GS
V
V
= V
, I
= 20
m
A
2.5
3.5
17
V
m
W
S
GS(TH)
DS
D
Drain
−
to
−
Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
R
V
= 10
V
, I
=
7
.5 A
14
2
DS(on)
GS
D
g
FS
V
= 3
V
, I
=
7
.5 A
DS D
C
325
165
10
pF
iss
V
GS
= 0
V
, f =
1
.0 MHz,
Output Capacitance
C
oss
V
DS
= 25 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
rss
Q
6.3
1.3
2.0
1.2
nC
nC
G(TOT)
Threshold Gate Charge
Q
G(TH)
V
= 10
V
, V
=
3
2
V
, I
=
7
.5 A
DS D
GS
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
GS
GD
Q
Turn
−
On Delay Time
Rise Time
t
7
ns
d(on)
t
r
13
14
4.5
V
= 10
V
, V
=
3
2
V
,
DS
GS
D
I
= 7.5 A, R
= 1
W
G
Turn
−
Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0
V
,
T =
25
°
C
0.84
0.72
18
1.2
V
SD
GS
J
I
= 7.5 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
7.0
11
a
V
GS
= 0
V
,
d
l
/dt = 100 A/
m
s,
S
I
S
= 7.5 A
Discharge Time
b
Reverse Recovery Charge
Q
6
nC
RR
5. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
6. Switching
characteristics are independent of operating junction temperatures.
2
NVMFD5C478N
TYPICAL CHARACTERISTICS
30
30
25
20
15
10
6 V
7 V to 10 V
V
DS
= 10 V
25
20
15
10
5 V
4 V
T =
25
°
C
J
5
0
5
0
T =
125
°
C
J
T =
−
55
°
C
J
0
1
2
3
3
4
5
6
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
20
100
90
80
70
60
50
40
30
20
T =
25
°
C
D
J
T =
25
°
C
J
18
16
14
12
10
8
I
= 7.5 A
V
GS
= 10 V
6
4
2
0
10
0
4
5
6
7
8
9
10
0
5
10
15
20
25
30
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
1.9
1.7
1.5
1.3
1.1
10K
1K
V
= 10 V
= 7.5 A
GS
I
D
T =
150
°
C
J
T =
125
°
C
J
100
10
T =
85
°
C
J
0.9
0.7
−
50
−
25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NVMFD5C478N
TYPICAL CHARACTERISTICS
10
9
10,000
1000
100
8
7
C
ISS
6
5
4
3
2
Q
Q
GD
GS
C
OSS
RSS
C
10
1
V
DS
= 32 V
V
= 0 V
GS
I
D
= 7.5 A
T =
25
°
C
J
1
0
T =
25
°
C
J
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
100
8.2
6.2
V
GS
= 0 V
t
r
t
d(off)
10
4.2
2.2
0.2
t
d(on)
T =
125
°
C
J
t
f
T =
25
°
C
J
V
GS
V
DS
= 10 V
= 32 V
T =
−
55
°
C
J
1
1
10
R ,
GATE RESISTANCE (
W
)
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
T
V
= 25
°
C
C
≤
10 V
GS
Single Pulse
T (initial)
= 25
°
C
J
10
m
s
T (initial)
= 100
°
C
J
1
0.5 ms
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
0.1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE(V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NVMFD5C478N
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFD5C478NT1G
5C478N
DFN8
1500 /
T
a
pe & Reel
1500 /
T
a
pe & Reel
(Pb
−
Free)
NVMFD5C478NWFT1G
478NWF
DFN8
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5×6, 1.27P Dual Flag (SO8FL
−
Dual)
CASE 506BT
ISSUE F
1
DATE 23 NOV 2021
2X
SCALE 2:1
NOTES:
0.20
C
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TI
P
.
4. PROFILE
TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS
D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
A
B
E
2X
D1
0.20
C
8
7
6
5
6. SEATING
PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BOD
Y
.
7. A
VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.
PIN ONE
E1
MILLIMETERS
IDENTIFIER
DIM
A
A1
b
b1
c
MIN
0.90
−−−
0.33
0.33
0.20
NOM
−−−
−−−
0.42
0.42
−−−
5.15 BSC
4.90
4.10
1.70
6.15 BSC
5.90
4.15
1.27 BSC
0.55
−−−
−−−
−−−
0.61
MAX
1.10
0.05
0.51
0.51
0.33
NOTE 7
4X
h
1
2
3
4
c
TOP VIEW
D
A1
D1
D2
D3
E
E1
E2
e
G
h
K
K1
4.70
3.90
1.50
5.10
4.30
1.90
0.10
0.10
C
C
A
DETAIL B
5.70
3.90
6.10
4.40
ALTERNATE
SEATING
PLANE
NOTE 6
DETAIL A
CONSTRUCTION
C
NOTE 4
SIDE VIEW
DETAIL A
0.45
−−−
0.51
0.56
0.48
3.25
1.80
0.65
12
−−−
−−−
_
D2
D3
L
M
N
0.71
3.75
2.20
4X
L
K
3.50
2.00
e
1
4
SOLDERING FOOTPRINT*
DETAIL B
4.56
4X
2X
2.08
2X
0.56
b1
8X
0.75
N
E2
M
8
5
4X
G
b
8X
4X
1.40
0.10
0.05
C
C
A B
K1
6.59
4.84
NOTE 3
2.30
BOTTOM VIEW
3.70
GENERIC
MARKING DIAGRAM*
0.70
1
XXXXXX
AYWZZ
4X
1.27
PITCH
1.00
5.55
XXXXXX = Specific Device Code
DIMENSION: MILLIMETERS
A
Y
W
ZZ
= Assembly Location
=
Y
e
ar
= Work Week
= Lot Traceability
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON50417E
DFN8 5X6, 1.27P DUAL FLAG (SO8FL
−
DUAL)
PAGE 1 OF 1
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onsemi
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onsemi
reserves
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onsemi
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onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
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onsemi
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©
Semiconductor Components Industries, LLC, 2019
onsemi
,
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onsemi
” or its affiliates
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−
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.
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−
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onsemi
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T
:
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o
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