onsemi-NVMFS6B14NT1G
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NVMFS6B14N
Power MOSFET
100
V
,
1
5 m
W
, 55 A, Single N−Channel
Features
•
Small Footprint (5×6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
•
Low Q
and Capacitance to Minimize Driver Losses
DS(on)
G
•
NVMFS6B14NWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
AEC−Q101 Qualified and P
P
A
P Capable
•
These Devices are Pb−Free and are RoHS Compliant
100 V
15 m
W
@ 10 V
55 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
16
Unit
V
D (5,6)
V
DSS
Gate−to−Source Voltage
Continuous Drain Cur-
V
GS
V
T
= 25
°
C
I
D
55
A
C
G (4)
rent R
q
JC
T
C
= 100
°
C
39
Steady
State
Power Dissipation
T
C
= 25
°
C
P
D
94
47
11
W
A
S (1,2,3)
N−CHANNEL MOSFET
R
q
JC
T
C
= 100
°
C
Continuous Drain Cur-
T =
25
°
C
A
I
D
rent R
q
JA
T =
100
°
C
A
8.0
Steady
State
MARKING
DIAGRAM
Power Dissipation
T =
25
°
C
A
P
D
3.8
1.9
140
W
R
q
D
JA
T =
100
°
C
A
1
S
S
S
G
D
D
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
A
I
DM
A
p
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX
AYWZZ
Operating Junction and Storage
T
e
mperature
T , T
−
5
5 to
+ 175
°
C
J
stg
D
Source Current (Body Diode)
I
S
60
29
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
A
Y
W
ZZ
= Assembly Location
=
Y
e
ar
= Work Week
= Lot Traceability
Energy (T
= 25
°
C, V
= 50
V
, V
=
1
0
V
,
J
DD
GS
I
= 24 A, L = 0.1 mH, R
= 25
W
)
L(pk)
G
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
1.6
40
°
C/W
q
JC
JA
R
q
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted
on FR4 board using a 650 mm
, 2 oz. Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2015 − Rev. 0
NVMFS6B14N/D
NVMFS6B14N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
T
e
mperature Coefficient
V
/
80
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0
V
,
= 80 V
T =
25
°
C
10
DSS
GS
DS
J
m
A
T =
125
°
C
J
100
100
Gate−to−Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
1
6 V
nA
GSS
DS
GS
GS
V
V
= V
, I
= 250
m
A
2.0
4.0
15
V
GS(TH)
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain−to−Source On Resistance
V
/T
J
−8.5
12.2
mV/
°
C
m
W
GS(TH)
R
V
GS
= 10 V
I =
20 A
D
DS(on)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
1300
260
18
ISS
Output Capacitance
C
V
V
= 0
V
, f = 1
M
Hz, V
= 50 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
20
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
2.2
6.4
6.5
5.4
1.0
G(TH)
Q
= 10
V
, V
=
5
0 V; I
= 20 A
GS
GD
GP
GS
DS
D
Q
V
V
Gate Resistance
R
T =
25
°
C
J
W
G
Turn−On Delay Time
t
9.6
39
d(ON)
Rise Time
t
r
V
GS
= 10
V
, V
=
5
0
V
,
DS
ns
V
I
= 20 A, R
= 1.0
W
D
G
Turn−Off Delay Time
t
16.6
6.8
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T =
25
°
C
J
0.83
0.8
45
1.2
V
I
= 0
V
,
GS
S
= 20 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
23
ns
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 20 A
Discharge Time
t
b
22
Reverse Recovery Charge
Q
50
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NVMFS6B14N
TYPICAL CHARACTERISTICS
100
80
100
V
GS
= 10 V
V
≤
10 V
90
80
70
60
50
40
30
20
DS
7.0 V
6.5 V
60
6.0 V
5.5 V
40
T =
25
°
C
J
20
0
4.0 V
2.0
5.0 V
4.5 V
10
0
T =
125
°
C
J
T =
−55
°
C
J
0
0.5
1.0
1.5
2.5
3.0
0
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
52
44
36
28
20
30
27
24
21
18
15
12
9
T =
25
°
C
J
I
= 20 A
D
T =
25
°
C
J
V
= 6.0 V
= 10 V
GS
V
GS
12
4
6
3
4.5 5.0
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
, GATE VOLTAGE (V)
10
15
20
I ,
DRAIN CURRENT (A)
25
30
V
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
100K
10K
1K
T =
150
°
C
J
I
V
= 20 A
D
= 10 V
GS
T =
125
°
C
J
100
1.0
0.8
T =
25
°
C
J
10
1
0.6
0.4
−50 −25
0
25
50
75
100 125 150 175
10 20
30
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (
°
C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
3
NVMFS6B14N
TYPICAL CHARACTERISTICS
11
10
9
Q
T
C
iss
1000
100
C
oss
8
C
rss
7
Q
Q
gs
gd
6
5
4
3
V
= 0 V
GS
10
1
T =
25
°
C
T =
25
°
C
DS
J
J
V
f = 1 MHz
= 50 V
2
1
0
I
D
= 20 A
2
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
100
0
4
6
8
10 12
14 16 18
20
V
Q ,
TOTAL GATE CHARGE (nC)
DS
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18
16
14
12
10
8
1000
100
V
= 50 V
= 20 A
= 10 V
DS
T =
25
°
C
J
I
D
V
GS
t
r
t
d(off)
t
d(on)
10
1
6
t
f
4
2
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
V
≤
10 V
GS
Single Pulse
T
C
= 25
°
C
100
10
1
500
m
s
1 ms
10 ms
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
4
NVMFS6B14N
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
100
10
25
°
C
100
°
C
5
0
1
0
5
10 15
20 25
30 35
40 45 50
0.0001
0.001
T ,
TIME IN AVALANCHE (sec)
AV
0.01
I ,
DRAIN CURRENT (A)
D
Figure 12. G
FS
vs. I
D
Figure 13. I
PEAK
vs. T
AV
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
2
0.1
NTMFS6B14N, 650 mm
, Cu Single Layer Pad
Single Pulse
0.01
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS6B14NT1G
6B14N
DFN5
(Pb−Free)
1500 /
T
a
pe & Reel
1500 /
T
a
pe & Reel
5000 /
T
a
pe & Reel
5000 /
T
a
pe & Reel
NVMFS6B14NWFT1G
NVMFS6B14NT3G
6B14WF
6B14N
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
NVMFS6B14NWFT3G
6B14WF
DFN5
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P
(SO
−
8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X
b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. ANODE
2X
0.905
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO
CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5×6, 1.27P (SO
−
8FL)
PAGE 1 OF 1
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onsemi
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onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
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onsemi
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special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
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−
Marking.pdf
.
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−
is” and
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. “Typical” parameters which may be provided in
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