onsemi-NVMTS1D2N08H
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N-Channel
80
V
,
1
.1 m
W
, 337 A
NVMTS1D2N08H
Features
•
Small Footprint (8×8 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
AEC
−
Q101 Qualified and P
P
A
P Capable
80 V
1.1 m
W
@ 10 V
337 A
•
These Devices are Pb
−
Free and are RoHS Compliant
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
D (5
−
8)
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25
°
C
= 100
°
C
= 25
°
C
I
337
238
300
150
43.5
30.8
5
A
C
D
G (1)
q
JC
T
C
Steady
State
S (2
−
4)
Power Dissipation
T
C
P
W
A
D
R
q
JC
N
−
CHANNEL MOSFET
T
C
= 100
°
C
Continuous Drain
Current R
T =
25
°
C
A
I
D
q
JA
T =
100
°
C
A
Steady
State
Power Dissipation
T =
25
°
C
A
P
W
D
R
q
JA
T =
100
°
C
A
2.5
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
900
A
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+ 175
°
C
J
stg
Source Current (Body Diode)
I
S
250
A
DFNW8
CASE 507AP
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
3170
mJ
Energy (I
= 28.9 A)
L(pk)
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1D2N08H
AWLYWW
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.5
Unit
Junction
−
to
−
Case
−
Steady State
R
°
C/W
q
JC
A
= Assembly Location
WL =
2
−
digit Wafer Lot Code
=
Y
ear Code
WW = Work Week Code
R
30
q
JA
Y
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2020
−
Rev. 1
NVMTS1D2N08H/D
NVMTS1D2N08H
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
80
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
57
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
DSS
GS
DS
J
V
= 80 V
m
A
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
GS
V
V
= V
, I
= 590
m
A
2.0
2.9
−
7.6
0.93
400
4.0
1.1
V
mV/
°
C
m
W
S
GS(TH)
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
GS(TH) J
R
V
GS
= 10 V
I =
90 A
D
DS(on)
g
FS
V
=15
V
, I
=
9
0 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
10100
1455
43
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0
V
, f =
5
00 kHz, V
= 40 V
pF
GS
DS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
147
27
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
41
V
= 10
V
, V
=
6
4 V; I
= 90 A
GS
GD
GP
GS
DS
D
Q
V
32
4
Turn
−
On Delay Time
t
29
14
66
19
d(ON)
Rise Time
t
r
V
= 10
V
, V
=
6
4
V
,
DS
GS
D
ns
V
I
= 90 A, R
= 2.5
W
G
Turn
−
Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.8
0.6
84
1.2
SD
J
V
S
= 0
V
,
GS
I
= 90 A
T =
125
°
C
J
Reverse Recovery Time
t
ns
RR
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 90 A
Reverse Recovery Charge
Q
189
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NVMTS1D2N08H
TYPICAL CHARACTERISTICS
250
200
150
100
250
10 V to 6 V
5.0 V
V
DS
= 5 V
200
150
100
V
GS
= 4.5 V
T =
25
°
C
J
50
0
50
0
4.0 V
T =
175
°
C
J
T =
−
55
°
C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1.On
−
Region Characteristics
Figure 2.Transfer Characteristics
20
15
10
2.0
1.5
T =
25
°
C
D
J
I
= 90 A
V
GS
= 10 V
1.0
0.5
5
0
3
4
5
6
7
8
9
10
10
60
110
160
210
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3.On
−
Resistance vs. Gate
−
to
−
Source
Figure 4.On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1E+00
1E
−
01
1E
−
02
1E
−
03
1E
−
04
T =
175
°
C
J
V
= 10 V
= 90 A
GS
T =
150
°
C
J
I
D
T =
125
°
C
J
T =
100
°
C
J
T =
85
°
C
J
T =
55
°
C
J
T =
25
°
C
J
1E
−
05
1E
−
06
0.8
0.6
−
75
−
50
−
25
0
25 50 75
100 125 150
175
5
15
V
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (
°
C)
J
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5.On
−
Resistance Variation with
Figure 6.Drain
−
to
−
Source Leakage Current vs.
Temperature
Voltage
3
NVMTS1D2N08H
TYPICAL CHARACTERISTICS
10
100K
10K
Q
G(tot)
C
8
6
4
ISS
C
OSS
Q
Q
GD
GS
1K
T =
25
°
C
D
J
100
10
C
2
0
RSS
I
= 90 A
V
= 0 V
GS
V
DS
= 64 V
f = 500 kHz
0
20
40
60
80
100
120
140 160
0.1
1
10
80
Q ,
TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 7.Capacitance Variation
Figure 8.Gate
−
to
−
Source Voltage vs. Total
Charge
1000
250
100
V
V
= 10 V
= 64 V
= 90 A
V
GS
= 0 V
GS
t
t
DS
d(off)
I
D
10
1
t
f
d(on)
100
10
0.1
T =
175
°
C
J
t
r
0.01
T =
25
°
C
J
T =
−
55
°
C
J
0.001
0
5
10 15
20 25
30 35 40 45
50
0
0.2
0.4
0.6
0.8
1.0
R ,
GATE RESISTANCE (
W
)
G
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9.Resistive Switching Time Variation
vs. Gate Resistance
Figure 10.Diode Forward Voltage vs. Current
200
100
5000
1000
T
= 25
°
C
J(initial)
10
m
s
100
10
100
m
s
T
= 100
°
C
J(initial)
10
1
T
= 25
°
C
C
Single Pulse
= 0.5
°
C/W
1 ms
R
q
JC
1
10 ms
100 ms/
DC
R
Limit
DS(on)
Thermal Limit
0.1
0.1
1
10
100
300
0.0001
0.001
t ,
TIME IN AVALANCHE (s)
AV
0.01
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11.Maximum Rated Forward Biased
Safe Operating Area
Figure 12.Maximum Drain Current vs. Time in
Avalanche
4
NVMTS1D2N08H
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
TIME (s)
Figure 13.Transient Thermal Impedance
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NVMTS1D2N08H
NVMTS1D2N08H
POWER 88
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3×8.4, 2.0
P
,
S
INGLE COOL
CASE 507AP
ISSUE D
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
A
= Assembly Location
WL =
Wafer Lot Code
=
Y
ear Code
Y
WW =
Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80534G
TDFNW8 8.3×8.4, 2.0
P
,
S
INGLE COOL
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2018
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