onsemi-NVMYS8D0N04CTWG
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NVMYS8D0N04C
N-Channel
40
V
,
8
.1 m
W
, 49 A
Features
•
Small Footprint (5×6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
LFPAK4 Package, Industry Standard
40 V
8.1 m
W
@ 10 V
49 A
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
These Devices are Pb
−
Free and are RoHS Compliant
D (5,6)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
G (4)
Continuous Drain
Current R
Steady
State
T
= 25
°
C
= 100
°
C
= 25
°
C
I
49
A
C
D
q
JC
S (1,2,3)
N
−
CHANNEL MOSFET
T
C
35
Power Dissipation
T
C
P
38
W
A
D
R
q
JC
T
C
= 100
°
C
19
Continuous Drain
Current R
Steady
State
T =
25
°
C
A
I
D
16
MARKING
DIAGRAM
q
JA
T =
100
°
C
A
11
Power Dissipation
T =
25
°
C
P
3.8
1.9
255
W
A
D
R
q
JA
8D0N04
C
T =
100
°
C
A
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
A
AWLYW
A
p
LFPAK4
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
CASE 760AB
Source Current (Body Diode)
I
31
81
A
S
8D0N04C
A
WL
Y
W
= Specific Device Code
= Assembly Location
=Wafer Lot
=
Y
e
ar
= Work Week
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 2.9 A)
L(pk)
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
260
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.0
Unit
Junction
−
to
−
Case
−
Steady State
R
°
C/W
q
JC
R
39
q
JA
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
July, 2019
−
Rev. 0
NVMYS8D0N04C/D
NVMYS8D0N04C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
23
mV/
°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
m
A
DSS
GS
DS
J
V
= 40 V
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
V
V
= V
, I
= 30
m
A
2.5
3.5
8.1
V
mV/
°
C
m
W
S
GS(TH)
GS
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
J
−
7
6.7
29
GS(TH)
R
V
GS
= 10 V
I =
15 A
D
DS(on)
g
FS
V
=15
V
, I
=
1
5 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 25 V
625
335
15
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
GS
= 10
V
, V
=
3
2 V; I
= 15 A
10
nC
nC
G(TOT)
DS
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
2.2
3.5
1.8
4.8
G(TH)
Q
GS
GD
GP
Q
V
V
Turn
−
On Delay Time
t
V
= 10
V
, V
=
3
2
V
,
9.5
24
19
6
ns
d(ON)
GS
D
DS
I
= 15 A, R
= 1
W
G
Rise Time
t
r
Turn
−
Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0
V
,
T =
25
°
C
0.84
0.71
24
1.2
V
SD
GS
J
I
= 15 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
V
= 0
V
,
d
I
/dt = 100 A/
m
s,
ns
RR
GS
S
I
S
= 15 A
t
t
11
a
Discharge Time
12
b
Reverse Recovery Charge
Q
11
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NVMYS8D0N04C
TYPICAL CHARACTERISTICS
50
45
40
35
30
25
20
15
10
50
10 V to 7 V
45
40
35
30
25
20
15
10
V
= 3 V
DS
6 V
5 V
4 V
T =
25
°
C
J
5
0
5
0
T =
125
°
C
J
T =
−
55
°
C
J
0
1
2
3
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
10
9
40
35
30
25
20
15
10
T =
25
°
C
D
J
V
GS
= 10 V
I
= 15 A
8
7
6
5
4
3
5
0
4
5
6
7
8
9
10
0
10 20 30 40 50 60 70 80 90
100
I ,
DRAIN CURRENT (A)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
10K
1K
1.9
1.7
1.5
1.3
1.1
V
= 10 V
= 15 A
T =
150
°
C
GS
J
I
D
T =
125
°
C
J
T =
85
°
C
J
100
10
0.9
0.7
−
50
−
25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NVMYS8D0N04C
TYPICAL CHARACTERISTICS
10
1000
100
9
8
7
6
5
4
3
C
ISS
C
OSS
Q
Q
GD
GS
C
RSS
10
1
V
DS
= 32 V
V
= 0 V
2
1
0
GS
I
D
= 15 A
T =
25
°
C
J
T =
25
°
C
J
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
100
V
GS
= 0 V
t
r
10.5
t
t
d(off)
10
d(on)
t
f
5.5
0.5
V
GS
V
DS
= 10 V
= 32 V
T =
−
55
°
C
J
T =
125
°
C
J
T =
25
°
C
J
1
1
10
R ,
GATE RESISTANCE (
W
)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T (initial)
= 25
°
C
J
10
m
s
T
V
= 25
°
C
C
≤
10 V
GS
1
T (initial)
= 100
°
C
J
Single Pulse
0.5 ms
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NVMYS8D0N04C
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMYS8D0N04CTWG
8D0N04C
LFPAK4
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK4 5×6
CASE 760AB
ISSUE C
DATE 19 NOV 2019
GENERIC
MARKING DIAGRAM*
XXXXXX =
Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
=
Y
e
ar
XXXXXX
XXXXXX
AWLYW
W
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82777G
LFPAK4 5×6
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
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onsemi
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−
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.
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−
is” and
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onsemi
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