onsemi-NVR4501NT1G
| Part # | onsemi-NVR4501NT1G |
Download  | onsemi-NVR4501NT1G |
NTR4501N, NVR4501N
N-Channel, SOT-23
20
V
,
3
.2 A
Features
•
Leading Planar Technology for Low Gate Charge / Fast Switching
•
2.5 V Rated for Low
V
o
ltage Gate Drive
•
SOT
−
23 Surface Mount for Small Footprint
•
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
V
R
Typ
I Max
D
(BR)DSS
DS(on)
70 m
W
@ 4.5 V
88 m
W
@ 2.5 V
3.6 A
20 V
3.1 A
•
These Devices are Pb
−
Free and are RoHS Compliant
N
−
Channel
D
Applications
•
Load/Power Switch for Portables
•
Load/Power Switch for Computing
•
DC
−
DC Conversion
G
MAXIMUM RATINGS
(T = 25
°
C unless otherwise stated)
J
S
Parameter
Drain
−
to
−
Source Voltage
Symbol Value Unit
MARKING DIAGRAM &
PIN ASSIGNMENT
V
DSS
20
12
V
V
3
Gate
−
to
−
Source Voltage
V
GS
Drain
3
Continuous Drain
Steady T
= 25
°
C
I
3.2
2.4
1.25
A
A
D
1
State
T =
85
°
C
A
A
xR1 M
G
2
G
Steady State Power
Steady State
P
W
SOT
−
23
CASE 318
STYLE 21
D
2
1
Gate
Source
Pulsed Drain Current
t =
10
m
s
p
I
10.0
A
DM
Operating Junction and Storage
T
e
mperature
T ,
stg
−
55 to
150
°
C
J
TR1 =
Device Code for NTR4501N
VR1 =
Device Code for NVR4501N
T
M
G
= Date Code*
= Pb
−
Free Package
Continuous Source Current (Body Diode)
I
1.6
A
S
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°
C
L
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
100
300
Unit
R
°
C/W
ORDERING INFORMATION
q
JA
R
q
JA
Device
Package
Shipping
†
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using 1 in sq pad size
NTR4501NT1G
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe & Reel
(Cu area = 1.127 in sq [1 oz] including traces).
NVR4501NT1G
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe & Reel
2. Surface
−
mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2019
−
Rev. 15
NTR4501N/D
NTR4501N, NVR4501N
Electrical Characteristics
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
V
V
GS
= 0
V
, I
=
2
50
m
A
20
24.5
22
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
V
/T
mV/
°
C
(BR)DSS
J
T
e
mperature Coefficient
Zero Gate Voltage Drain Current
I
V
= 0 V
T =
25
°
C
1.5
10
m
A
m
A
nA
DSS
GS
J
V
DS
= 16 V
= 0
V
, V
=
GS
T =
85
°
C
J
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
12 V
100
GSS
DS
V
V
GS
= V
, I
= 250
m
A
0.65
1.2
V
GS(TH)
DS
D
Negative Threshold
V
/T
−
2.3
mV/
°
C
GS(TH)
J
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
= 4.5
V
, I
=
3
.6 A
70
88
9
80
GS
GS
DS
D
R
m
W
DS(on)
V
= 2.5
V
, I
=
3
.1 A
105
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 5.0
V
, I
=
3
.6 A
S
D
C
200
80
iss
V
GS
= 0
V
, f =
1
.0 MHz,
Output Capacitance
C
oss
pF
nC
V
DS
= 10 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
50
rss
Q
2.4
0.5
0.6
6.0
G(TOT)
V
GS
= 4.5
V
, V
=
1
0
V
,
DS
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain Charge
Turn
−
On Delay Time
Q
GS
I
D
= 3.6 A
Q
GD
t
6.5
12
12
3
13
24
24
6
d(on)
Rise Time
t
r
V
= 4.5
V
, V
=
1
0
V
,
DS
GS
D
ns
V
I
= 3.6 A, R
= 6.0
W
G
Turn
−
Off Delay Time
t
d(off)
Fall Time
t
f
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
V
SD
V
= 0
V
, I
=
1
.6 A
0.8
7.1
5
1.2
GS
SD
t
RR
V
GS
= 0
V
,
t
a
ns
d /d
= 100 A/
m
s,
IS
t
S
Discharge Time
t
b
1.9
3.0
I
= 1.6 A
Reverse Recovery Charge
Q
nC
RR
3. Pulse
T
e
st: Pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching
characteristics are independent of operating junction temperatures.
2
NTR4501N, NVR4501N
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
8
V
≥
10 V
DS
V
= 2.0 V
= 1.8 V
GS
T =
25
°
C
V
= 10 V
= 2.2 V
J
GS
7
6
5
4
3
2
1
0
V
GS
V
GS
= 3.0 V
V
GS
V
V
= 1.6 V
GS
T =
25
°
C
T =
125
°
C
J
J
= 1.4 V
= 1.2 V
GS
T =
−
55
°
C
V
GS
J
0
1
2
3
4
5
6
7
8
9
10
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.10
0.09
0.08
0.25
0.20
0.15
0.10
0.05
T =
25
°
C
J
I
= 3.2 A
D
V
= 2.5 V
T =
25
°
C
GS
J
V
= 4.5 V
GS
0.07
0.06
0.05
1
2
3
4
5
6
2
3
4
5
6
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPS)
D
Figure 3. On
−
Resistance versus
Gate
−
to
−
Source Voltage
Figure 4. On
−
Resistance versus Drain
Current and Gate Voltage
1.4
1.2
1.0
0.8
0.6
1000
100
10
V
= 0 V
GS
I
V
= 3.2 A
D
= 4.5 V
GS
T =
150
°
C
J
T =
100
°
C
J
1.0
−
50
−
25
0
25
50
75
100
125 150
2
4
6
8
10
, DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
12
14
16
18
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage
Temperature
Current versus Voltage
3
NTR4501N, NVR4501N
5.0
350
300
250
200
150
100
15
12
9
V
= 0 V
GS
Q
T
T =
25
°
C
J
4.0
3.0
2.0
V
V
GS
DS
C
iss
Q
Q
6
GD
GS
C
oss
3
1.0
0
50
0
T =
25
°
C
J
C
rss
I
D
= 3.2 A
0
3.0
0
0.5
1.0
1.5
2.0
2.5
0
2.5
5
7.5
10 12.5
15
17.5
20
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and Drain
−
to
−
Source
Voltage versus Total Charge
100
10
4
V
= 10 V
= 3.2 A
= 4.5 V
DS
V
= 0 V
GS
I
D
T =
25
°
C
J
V
GS
t
d(off)
3
2
t
r
t
d(on)
t
f
1
1
0
0.1
0.3
0.6
, SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
0.9
1.2
1
10
R ,
GATE RESISTANCE (
W
)
100
V
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME, tp (s)
Figure 11. Thermal Response
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
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