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. “
T
ypical” parameters which may be provided in
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data sheets and/
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N-Channel, Logic Level,
SOT-23
60
V
,
1
55 m
W
NVR5198NL
Features
•
Small Footprint Industry Standard Surface Mount SOT
−
23 Package
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
•
Low R
for Low Conduction Losses and Improved Efficiency
DS(on)
155 m
W
@ 10 V
205 m
W
@ 4.5 V
60 V
2.2 A
•
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
N
−
Channel
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol Value
Unit
V
G
V
DSS
60
20
V
GS
V
S
Continuous Drain
Current R
Steady
State
T
T
T
T
= 25
°
C
= 100
°
C
= 25
°
C
= 100
°
C
I
2.2
1.6
1.5
0.6
1.7
1.2
0.9
0.4
27
A
mb
mb
mb
mb
D
Y
Jmb
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Power Dissipation
R
P
W
A
D
D
Y
Jmb
Drain
3
1
Continuous Drain
Current R
Steady T
= 25
°
C
State
I
D
A
2
q
JA
AAL M
G
T =
100
°
C
A
SOT
−
23
CASE 318
STYLE 21
G
Power Dissipation
T =
25
°
C
A
P
W
2
1
Gate
R
q
JA
T =
100
°
C
A
Source
Pulsed Drain Current
T =
25
°
C,
t =
10
m
s
I
A
A
p
DM
AAL
M
G
= Device Code
= Date Code*
= Pb
−
Free Package
Operating Junction and Storage
T
e
mperature
T ,
−
55 to
150
°
C
J
T
stg
(Note: Microdot may be in either location)
Source Current (Body Diode)
I
1.9
A
S
*Date Code orientation may vary depending
upon manufacturing location.
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The
entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi
(
Y
) is used as required per JESD51
−
12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface
−
mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
†
Device
Package
Shipping
NVR5198NLT1G
NVR5198NLT3G
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe & Reel
SOT
−
23
10000 /
(Pb
−
Free)
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2019
−
Rev. 3
NVR5198NL/D
NVR5198NL
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
86
Unit
°
C/W
°
C/W
R
Y
Jmb
R
139
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
= 250
m
A
60
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
Reference to 25
°
C, I
= 250
m
A
70
mV/
°
C
(BR)DSS
D
Zero Gate Voltage Drain Current
I
V
GS
V
DS
= 0
V
,
= 60 V
T =
25
°
C
1.0
10
m
A
DSS
J
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
“
20 V
“
100
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
1.5
2.5
V
GS(TH)
GS
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On
−
Resistance
V
/T
Reference to 25
°
C, I
= 250
m
A
−
6.5
107
142
3
mV/
°
C
m
W
GS(TH)
J
D
R
V
= 10 V, I
= 1 A
155
205
DS(on)
GS
GS
DS
D
V
V
= 4.5
V
, I
= 1 A
D
Forward Transconductance
g
FS
= 5.0
V
, I
= 1 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
182
25
pF
iss
V
= 0
V
, f =
1
.0 MHz,
GS
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
oss
V
= 25 V
DS
C
16
rss
Q
V
= 4.5 V
= 10 V
2.8
5.1
0.3
0.8
1.5
3.1
8
nC
G(TOT)
GS
V
DS
I
= 48 V,
= 1 A
D
V
GS
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
G(TH)
Q
GS
GD
GP
V
= 48 V, I
= 1 A
D
GS
DS
V
= 10 V
Q
V
V
Gate Resistance
R
W
G
Turn
−
On Delay Time
Rise Time
t
5
7
ns
d(on)
t
r
V
= 30
V
, V
=
1
0
V
,
GS
DS
D
I
= 1 A, R
= 10
W
G
Turn
−
Off Delay Time
Fall Time
t
13
2
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0
V
,
T =
25
°
C
0.8
0.6
12
9
1.2
V
SD
GS
S
J
I =
1 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
a
I
= 1 A
, V
= 0 V
,
dc GS
dc
dI /dt
= 100 A/
m
s
S
S
Discharge Time
t
3
b
Reverse Recovery Stored Charge
Q
6
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
6. Switching
characteristics are independent of operating junction temperatures.
2
NVR5198NL
TYPICAL CHARACTERISTICS
15
14
13
12
11
10
9
15
14
V
GS
= 10 V
V
= 6.0 V
GS
V
DS
= 5 V
13
12
11
10
9
V
= 5.0 V
= 4.5 V
GS
V
GS
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
V
= 3.0 V
V
= 4.0 V
= 3.8 V
= 3.6 V
GS
GS
V
V
GS
T =
25
°
C
J
GS
GS
V
= 3.4 V
= 3.2 V
T =
150
°
C
J
V
GS
1
T =
−
55
°
C
J
0
0
1
2
3
4
5
1
2
3
4
5
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
T =
25
°
C
J
V
GS
= 4.5 V
I
= 1 A
D
T =
25
°
C
J
V
GS
= 10 V
0.10
0.05
0.10
0.05
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
15
V
GS
, GATE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
1.150
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.125
1.100
I =
250
m
A
D
I
V
= 1 A
D
= 10 V
GS
1.075
1.050
1.025
1.000
0.975
0.950
0.925
0.900
0.7
0.6
−
50
−
25
0
25
50
75
100
125
150
−
50
−
25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 5. On
−
Resistance Variation with
Figure 6. Breakdown Voltage Variation with
Temperature
Temperature
3
NVR5198NL
TYPICAL CHARACTERISTICS
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
10,000
I
= 250
m
A
D
T =
150
°
C
J
1000
100
T =
125
°
C
J
T =
85
°
C
J
10
1
0.65
0.60
−
50
−
25
0
25
50
75
100 125
150
0
5
10 15 20 25 30 35 40 45 50 55 60
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 7. Threshold Voltage Variation with
Temperature
Figure 8. Drain
−
to
−
Source Leakage Current
vs. Voltage
275
250
225
200
175
150
125
12
60
T =
25
°
C
J
11
10
9
55
50
45
Q
T
f = 1 MHz
V
GS
= 0 V
C
ISS
8
7
6
5
4
3
2
40
35
30
25
20
15
10
V
V
GS
DS
100
75
Q
Q
GD
GS
V
= 48 V
= 1 A
DS
I
D
C
50
OSS
T =
25
°
C
J
25
0
1
0
5
0
C
RSS
0
5
10 15 20 25 30 35 40 45 50 55 60
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5.5
V
DS
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 9. Capacitance Variation
Figure 10. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
100
10
10
T =
150
°
C
J
V
= 30 V
= 1 A
= 10 V
DD
I
D
T =
125
°
C
J
V
GS
t
t
d(off)
T =
100
°
C
J
t
r
d(on)
T =
85
°
C
J
1
t
f
1
T =
25
°
C T
=
−
55
°
C
J
J
0.1
0.1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.4 0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
SD
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
4
NVR5198NL
TYPICAL CHARACTERISTICS
100
10
V
≤
10 V
GS
Single Pulse
T =
25
°
C
A
10
m
S
100
m
S
1
1 mS
10 mS
dc
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.01
0.1
1
10
100
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1000
100 50%
Duty Cycle
20%
10%
5%
R
Steady State = 139
°
C/W
q
JA
10
1
2%
1%
Single Pulse
0.0001 0.001
0.000001 0.00001
0.01
0.1
1
10
100
1000
t, TIME (sec)
Figure 14. Thermal Impedance (Junction
−
to
−
Ambient)
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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