onsemi-NVS4409NT1G
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NTS4409N, NVS4409N
MOSFET
– Single,
N-Channel, Small Signal,
ESD Protection,
SC-70/SOT-323
25
V
,
0
.75 A
V
R
Typ
I Max
D
(BR)DSS
DS(on)
Features
249 m
W
@ 4.5 V
299 m
W
@ 2.7 V
•
Advance Planar Technology for Fast Switching, Low R
DS(on)
25 V
0.75 A
•
Higher Efficiency Extending Battery Life
•
AEC
−
Q101 Qualified and PPAP Capable
−
NVS4409N
•
These Devices are Pb
−
Free and are RoHS Compliant
SC
−
70 (3
−
Leads)
Applications
Gate
1
2
•
Boost and Buck Converter
•
Load Switch
•
Battery Protection
3
Drain
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Source
Rating
Drain
−
to
−
Source Voltage
Symbol Value Unit
V
25
“
8.0
0.75
0.7
V
V
A
A
DSS
T
o
p View
Gate
−
to
−
Source Voltage
V
GS
Drain Current
t < 5 s
T =
25
°
C
I
D
D
A
MARKING DIAGRAM &
PIN ASSIGNMENT
Continuous Drain Current
T =
25
°
C
A
I
Steady
State
3
T =
75
°
C
A
0.6
Drain
Pulsed Drain Current
Steady State
t
v
5 s
t =
10
m
s
P
P
0.28
0.33
3.0
W
W
A
D
D
T4 W
G
SC
−
70/SOT
−
323
CASE 419
G
I
p
DM
STYLE 8
Operating Junction and Storage
T
e
mperature
T ,
−
55 to
+150
°
C
J
T
1
2
STG
Gate
Source
I
S
0.3
A
Lead
T
e
mperature for Soldering Purposes
260
°
C
T4
W
G
= Device Code
= Work Week
= Pb
−
Free Package
T
L
(1/8
″
from case for 10 s)
ESD Rating
−
Machine Model
25
V
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Rating
ORDERING INFORMATION
Symbol
Max
450
375
Unit
R
°
C/W
†
q
JA
Device
Package
Shipping
R
q
JA
NTS4409NT1G
SOT
−
323 3000
/
T
a
pe & Reel
(Pb
−
Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq pad size
NVS4409NT1G SOT
−
323 3000
/
T
a
pe & Reel
(Pb
−
Free)
(Cu area = 1.127 in sq [1 oz] including traces).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
June, 2019
−
Rev. 4
NTS4409N/D
NTS4409N, NVS4409N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
= 250
m
A
25
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
30
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
T =
25
°
C
0.5
2.0
5.0
100
m
A
DSS
J
V
V
= 0
V
,
GS
DS
T =
70
°
C
J
= 20 V
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
= 8.0 V
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
0.65
1.5
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/T
−
2.0
mV/
°
C
GS(TH)
J
Drain
−
to
−
Source On Resistance
R
V
= 4.5 V, I
= 0.6 A
249
299
260
0.5
350
400
m
W
DS(on)
GS
GS
GS
DS
D
V
= 2.7 V, I
= 0.2 A
D
V
V
= 4.5 V, I
= 1.2 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
= 5.0 V, I
= 0.5 A
S
D
C
49
22.4
8.0
60
30
12
1.5
pF
ISS
V
GS
= 0
V
, f =
1
.0 MHz,
Output Capacitance
C
OSS
RSS
V
DS
= 10 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
1.2
nC
ns
V
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
0.2
G(TH)
V
GS
= 4.5
V
, V
= 15 V,
DS
I
D
= 0.8 A
Q
0.28
0.3
0.50
0.40
GS
GD
Q
Turn
−
On Delay Time
t
5.0
8.2
23
12
8.0
35
60
d(ON)
Rise Time
t
r
V
= 4.5 V, V
= 15 V,
DS
GS
D
I
= 0.7 A, R
= 51
W
G
Turn
−
Off Delay Time
t
d(OFF)
Fall Time
t
f
41
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0
V
,
T =
25
°
C
J
0.82
1.20
I =
0.6 A
S
2. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTS4409N, NVS4409N
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
3.2
2.4
1.6
3.2
T =
25
°
C
V
DS
≥
10 V
J
8 V
4.5 V
3 V
2.4
1.6
2.5 V
V
GS
= 2 V
0.8
0
0.8
0
25
°
C
V
GS
= 1.5 V
T =
125
°
C
J
T =
−
55
°
C
J
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.8
0.6
0.4
0.8
0.6
0.4
V
GS
= 4.5 V
V
GS
= 2.5 V
T =
125
°
C
J
T =
125
°
C
J
T =
25
°
C
J
T =
25
°
C
J
0.2
0
0.2
0
T =
−
55
°
C
J
T =
−
55
°
C
J
0
0.8
1.6
2.4
3.2
0
0.8
1.6
2.4
3.2
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On
−
Resistance vs. Drain Current and
Figure 3. On
−
Resistance vs. Drain Current and
Gate Voltage
Temperature
100
80
2
T =
25
°
C
I
D
= 0.75 A
J
V
GS
= 0 V
1.8
1.6
1.4
1.2
1
V
GS
= 2.5 V
60
C
C
iss
V
GS
= 4.5 V
40
C
oss
20
0
0.8
0.6
rss
−
50
−
25
0
25
50
75
100
125 150
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (
°
C)
J
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 5. On
−
Resistance Variation with
Figure 6. Capacitance Variation
Temperature
3
NTS4409N, NVS4409N
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
3.2
5
4
Q
V
GS
= 0 V
G(TOT)
2.4
1.6
V
GS
3
2
Q
Q
GS
GD
0.8
0
1
0
T =
125
°
C
J
I
= 0.8 A
D
T =
25
°
C
T =
25
°
C
J
J
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1
1.2
Q ,
TOTAL GATE CHARGE (nC)
g
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
Figure 7. Gate
−
to
−
Source and
Figure 8. Diode Forward Voltage vs. Current
Drain
−
to
−
Source Voltage vs. Total Charge
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1.
ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1.
CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1.
BASE
STYLE 8:
PIN 1.
GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1.
EMITTER
PIN 1.
ANODE
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC
−
70 (SOT
−
323)
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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