onsemi-NVTFS4C06NTWG
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DATA SHEET
N-Channel,
m
8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
4.2 m
W
@ 10 V
6.1 m
W
@ 4.5 V
30 V
71 A
30
V
,
4
.2 m
W
, 71 A
NVTFS4C06N
Features
N−Channel
D (5 − 8)
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Capacitance to Minimize Driver Losses
•
Optimized Gate Charge to Minimize Switching Losses
•
NVTFS4C06NWF − Wettable Flanks Product
•
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
G (4)
S (1, 2, 3)
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
1
Parameter
Drain−to−Source Voltage
Symbol Value Unit
WDFN8 3.3×3.3, 0.65P
CASE 511AB
V
30
20
V
V
A
DSS
Gate−to−Source Voltage
V
GS
Continuous Drain Current
Steady
T =
25
°
C
I
D
21
A
R
q
JA
State
T =
100
°
C
A
15
T =
25
°
C
P
3.1
1.6
71
W
Power Dissipation R
WDFNW8 3.3×3.3, 0.65P (Full−Cut
m
8FL WF)
q
JA
A
D
CASE 515AN
T =
100
°
C
A
Continuous Drain Current
T =
25
°
C
A
I
D
R
q
JC
T =
100
°
C
A
50
A
MARKING DIAGRAM
Power Dissipation
T =
25
°
C
P
D
37
W
A
R
q
JC
T =
100
°
C
A
18
1
S
S
S
G
D
D
D
D
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
367
A
A
p
XXXX
AYWW
G
G
Operating Junction and Storage
T
e
mperature
T ,
−55 to
°
C
+175
J
stg
T
Source Current (Body Diode)
I
S
33
34
A
Single Pulse Drain−to−Source Avalanche Energy
E
AS
mJ
4C06
= Specific Device Code for
NVMTS4C06N
06WF =
Specific Device Code of
NVTFS4C06NWF
(T =
25
°
C, I
= 26 A
, L = 0.1 mH)
J
L
pk
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from Case for 10 s)
T
L
260
°
C
A
Y
WW
G
= Assembly Location
=
Y
e
ar
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Pb−Free Package
THERMAL RESISTANCE MAXIMUM RATINGS
(Note: Microdot may be in either location)
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
R
q
JC
4.1
°
C/W
Junction−to−Ambient – Steady State
R
q
JA
48
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
1. The
entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2
2. Surface−mounted
on FR4 board using a 650 mm
2 oz. Cu pad.
3. Assumes
heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous
DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2022 − Rev. 2
NVTFS4C06N/D
NVTFS4C06N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
30
−
−
−
−
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
T
e
mperature Coefficient
V
/
14.4
mV/
°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0
V
,
= 24 V
m
A
T =
25
°
C
−
−
−
−
−
−
1.0
10
DSS
GS
DS
J
T =
125
°
C
J
Gate−to−Source Leakage Current
Gate Threshold Voltage
I
V
V
= 0
V
, V
=
20 V
100
nA
GSS
DS
GS
V
= V
, I
= 250
m
A
1.3
−
−
2.2
−
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain−to−Source On Resistance
V
/T
J
3.8
3.4
4.9
58
mV/
°
C
m
W
GS(TH)
R
V
GS
V
GS
V
DS
= 10 V
= 4.5 V
I
I
= 30 A
= 30 A
−
4.2
6.1
−
DS(on)
D
−
D
Forward Transconductance
Gate Resistance
g
FS
= 1.5
V
, I
=
1
5 A
−
S
D
R
T =
25
°
C
A
−
1.0
−
W
G
CHARGES AND CAPACITANCES
Input Capacitance
V
= 0
V
, f = 1
M
Hz, V
= 15 V
pF
nC
C
−
−
−
−
−
−
−
−
−
−
1683
841
40
−
−
−
−
−
−
−
−
−
−
GS
DS
ISS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
V
= 0
V
, V
=
1
5
V
, f = 1
M
Hz
0.023
11.6
2.6
RSS ISS
GS
DS
= 4.5
V
, V
=
1
5 V; I
= 30 A
T
o
tal Gate Charge
Q
GS
DS
D
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
T
o
tal Gate Charge
Q
G(TH)
Q
4.7
GS
GD
GP
Q
4.0
V
3.1
V
Q
t
V
V
= 10
V
, V
=
1
5 V; I
= 30 A
26
nC
G(TOT)
GS
DS
D
Turn−On Delay Time
Rise Time
= 4.5
V
, V
=
1
5
V
,
ns
ns
−
−
−
−
−
−
−
−
10
32
−
−
−
−
−
−
−
−
GS
DS
d(ON)
I
D
= 15 A, R
= 3.0
W
G
t
r
Turn−Off Delay Time
Fall Time
t
18
d(OFF)
t
5.0
8.0
28
f
V
GS
= 10
V
, V
=
1
5
V
,
Turn−On Delay Time
Rise Time
t
d(ON)
DS
I
D
= 15 A, R
= 3.0
W
G
t
r
Turn−Off Delay Time
Fall Time
t
24
d(OFF)
t
3.0
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0
V
,
= 10 A
V
T =
25
°
C
−
−
−
−
−
−
0.8
0.63
34
1.1
−
SD
GS
J
I
S
T =
125
°
C
J
V
GS
= 0
V
,
d
IS/dt = 100 A/
m
s,
= 30 A
ns
Reverse Recovery Time
Charge Time
t
−
RR
I
S
t
t
17
−
a
b
Discharge Time
17
−
Reverse Recovery Charge
Q
22
−
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
6. Switching
characteristics are independent of operating junction temperatures.
2
NVTFS4C06N
TYPICAL CHARACTERISTICS
80
3.4 V
3.6 V
T =
25
°
C
J
60
50
40
30
20
10
0
V
DS
= 5 V
70
60
50
40
30
20
10
0
3.2 V
4.0 V to 10 V
3.0 V
2.8 V
T =
125
°
C
J
2.2 V
2.6 V
2.4 V
T =
25
°
C
J
T =
−55
°
C
J
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
I
D
= 30 A
T =
25
°
C
J
V
= 4.5 V
= 10 V
GS
V
GS
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
T =
150
°
C
GS
J
T =
125
°
C
J
T =
85
°
C
J
10
−50 −25
0
25
50
75
100 125 150 175
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
3
NVTFS4C06N
TYPICAL CHARACTERISTICS
2000
1800
1600
1400
1200
1000
800
10
V
= 0 V
GS
C
Q
iss
T
T =
25
°
C
J
8
6
4
2
0
C
oss
Q
6
gd
600
T =
25
°
C
Q
2
J
V
gs
400
= 15 V
DD
GS
V
= 10 V
200
C
rss
I
D
= 30 A
0
0
5
10
15
20
25
30
0
4
8
10 12 14 16 18 20 22 24 26
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
20
18
16
14
12
10
8
V =
0 V
GS
V
= 15 V
= 15 A
= 10 V
DD
I
D
V
GS
t
d(off)
t
r
t
d(on)
6
T =
125
°
C
J
4
T =
25
°
C
J
t
f
2
1.0
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
m
s
dc
10
1
100
m
s
1 ms
V
GS
= 10 V
T
= 25
°
C
C
10 ms
2
650 mm
2 oz Cu Pad
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
4
NVTFS4C06N
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
100
130
120
110
100
90
80
T
= 25
°
C
J(initial)
70
60
T
= 125
°
C
J(initial)
10
50
40
30
20
10
0
1
1.0E−06
0
5
10 15 20 25 30 35 40 45 50 55 60
(A)
1.0E−05
T ,
TIME IN AVALANCHE (s)
AV
1.0E−04
1.E−03
I
D
Figure 13. G
FS
vs. I
D
Figure 14. Avalanche Characteristics
ORDERING INFORMATION
Device
†
Package
Shipping
NVTFS4C06NTAG
WDFN8 3.3×3.3, 0.65P
(Pb−Free)
1500 /
T
a
pe & Reel
NVTFS4C06NWFTAG
1500 /
T
a
pe & Reel
WDFNW8 3.3×3.3, 0.65P (Full−Cut
m
8FL WF)
(Pb−Free)
NVTFS4C06NTWG
WDFN8 3.3×3.3, 0.65P
(Pb−Free)
5000 /
T
a
pe & Reel
5000 /
T
a
pe & Reel
NVTFS4C06NWFTWG
WDFN8 3.3×3.3, 0.65P
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3×3.3, 0.65P
CASE 511AB
ISSUE D
1
DATE 23 APR 2012
SCALE 2:1
2X
NOTES:
0.20
C
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X
b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWW
G
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
G
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFNW8 3.3×3.3, 0.65P (Full
−
Cut
m
8FL WF)
CASE 515AN
ISSUE O
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
=
Y
e
ar
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWW
G
G
WW =
Work Week
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24556H
WDFNW8 3.3×3.3, 0.65P (Full
−
Cut
m
8FL WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
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−
is” and
onsemi
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onsemi
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o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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