onsemi-NVTFWS008N04CTAG
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DATA SHEET
N-Channel
40
V
,
7
.1 m
W
, 48 A
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
8.5 m
W
@ 10 V
48 A
NVTFS008N04C
N
−
Channel
D (5
−
8)
Features
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Capacitance to Minimize Driver Losses
•
NVTFWS008N04C
−
Wettable Flanks Product
•
AEC
−
Q101 Qualified and P
P
A
P Capable
G (4)
S (1, 2, 3)
•
These Devices are Pb
−
Free and are RoHS Compliant
MARKING
DIAGRAM
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
1
WDFN8
CASE 511AB
V
DSS
S
S
S
D
D
D
D
1
XXXX
AYWW
G
G
Gate
−
to
−
Source Voltage
V
GS
20
V
WDFNW8
CASE 515AN
Continuous Drain
Current R
T
= 25
°
C
= 100
°
C
= 25
°
C
I
48
A
G
C
D
q
JC
T
C
27
Steady
State
XXXX =
Specific Device Code
Power Dissipation
T
C
P
38
W
A
D
A
Y
WW
G
= Assembly Location
=
Y
e
ar
R
q
JC
T
C
= 100
°
C
12
= Work Week
Continuous Drain
Current R
T =
25
°
C
I
14
= Pb
−
Free Package
(Note: Microdot may be in either location)
A
D
q
JA
T =
100
°
C
A
10
Steady
State
Power Dissipation
T =
25
°
C
A
P
3.1
1.5
193
W
D
R
q
JA
T =
100
°
C
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
A
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
Source Current (Body Diode)
I
31
75
A
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 2.9 A)
L(pk)
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
Symbol
Value
4
Unit
R
°
C/W
q
JC
R
48.6
q
JA
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi
(
Y
) is used as required per JESD51
−
12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
4. Continuous
DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2021
−
Rev. 2
NVTFS008N04C/D
NVTFS008N04C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
GS
D
I
T =
25
°
C
10
m
A
DSS
J
V
= 0
V
,
= 40 V
GS
DS
V
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
V
V
= V
, I
= 30
m
A
2.5
3.5
8.5
V
m
W
S
GS(TH)
GS
DS
D
Drain
−
to
−
Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
R
V
= 10
V
, I
=
1
5 A
7.1
29
DS(on)
GS
D
g
FS
V
= 15
V
, I
=
1
5 A
D
DS
C
625
335
15
pF
nC
iss
V
GS
= 0
V
, f =
1
.0 MHz,
Output Capacitance
C
oss
V
DS
= 25 V
Reverse Transfer Capacitance
Threshold Gate Charge
C
rss
Q
2.2
3.5
1.8
10
G(TH)
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
V
V
= 10
V
, V
=
3
2
V
, I
=
1
5 A
DS D
GS
GS
Q
GD
T
o
tal Gate Charge
Q
= 10
V
, V
=
3
2
V
, I
=
1
5 A
nC
ns
G(TOT)
GS
DS
D
Turn
−
On Delay Time
Rise Time
t
9.5
24
19
6
d(on)
t
r
V
GS
= 10
V
, V
=
3
2
V
,
DS
I
D
= 15 A
Turn
−
Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.84
0.71
24
1.2
V
SD
J
V
= 0
V
,
GS
S
I
= 15 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
11
a
V
GS
= 0
V
,
d
l
/dt = 100 A/
m
s,
S
I
S
= 15 A
Discharge Time
12
b
Reverse Recovery Charge
Q
11
nC
RR
5. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
6. Switching
characteristics are independent of operating junction temperatures.
2
NVTFS008N04C
TYPICAL CHARACTERISTICS
50
50
45
40
35
30
25
20
15
10
V
GS
= 10 V to 7 V
45
40
35
30
25
20
15
10
V
DS
= 3 V
6.0 V
T =
25
°
C
J
5.0 V
4.0 V
T =
125
°
C
J
5
0
5
0
T =
−
55
°
C
J
0
1
2
3
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
13
12
11
10
9
13
12
11
10
9
T =
25
°
C
D
J
T =
25
°
C
J
I
= 15 A
8
V
GS
= 10 V
8
7
7
6
6
5
6.0 6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
100K
10K
1K
2.0
1.8
1.6
1.4
1.2
1.0
V
= 10 V
= 15 A
GS
T =
175
°
C
J
I
D
T =
150
°
C
J
T =
125
°
C
J
T =
85
°
C
J
100
10
0.8
T =
25
°
C
J
1
0.6
0.4
0.1
−
50
−
25
0
25
50
75 100
125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NVTFS008N04C
TYPICAL CHARACTERISTICS
10K
10
9
8
C
1K
ISS
7
C
OSS
6
5
4
3
Q
Q
GD
GS
100
C
RSS
10
1
V
DS
= 32 V
2
V
= 0 V
GS
T =
25
°
C
J
T =
25
°
C
J
1
0
I
D
= 15 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
100
100
V
GS
= 0 V
t
r
T =
−
55
°
C
J
t
t
d(off)
d(on)
10
10
t
f
V
V
= 10 V
= 32 V
GS
DS
I
D
= 15 A
T =
125
°
C
T =
25
°
C
J
J
1
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25
°
C
C
Single Pulse
≤
10 V
V
GS
T
= 25
°
C
J(initial)
10
10
m
s
T
= 100
°
C
J(initial)
1
0.5 ms
1 ms
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NVTFS008N04C
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTFS008N04CTAG
08NC
WDFN8
1500 /
T
a
pe & Reel
1500 /
T
a
pe & Reel
(Pb
−
Free)
NVTFWS008N04C
T
A
G
08NW
WDFNW8
(Pb
−
Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
NVTFS008N04C
PACKAGE DIMENSIONS
WDFNW8 3.3×3.3, 0.65P (Full
−
Cut
m
8FL WF)
CASE 515AN
ISSUE O
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3×3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X
b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWW
G
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
G
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2019
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