onsemi-NVTR0202PLT1G
| Part # | onsemi-NVTR0202PLT1G |
Download  | onsemi-NVTR0202PLT1G |
NTR0202PL, NVTR0202PL
P-Channel, SOT-23
-20
V
,
–
400 mA
Features
•
Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
R
R
= 0.80
W
, V
=
−
10 V
DSon
GS
V
R
Typ
I MAX
D
(BR)DSS
DS(on)
= 1.10
W
, V
=
−
4.5 V
DSon
GS
−
20 V
550 m
W
@
−
10 V
−
400 mA
•
Miniature SOT
−
23 Surface Mount Package Saves Board Space
•
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
P
−
Channel
D
•
These Devices are Pb
−
Free and are RoHS Compliant
Applications
•
DC
−
DC Converters
•
Computers
G
•
Printers
S
•
PCMCIA Cards
•
Cellular and Cordless Telephones
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
−
20
Unit
V
PL M
G
Drain
−
to
−
Source Voltage
V
DSS
G
SOT
−
23
CASE 318
STYLE 21
Gate
−
to
−
Source Voltage
−
Continuous
V
$
20
−
0.4
−
1.0
V
GS
1
Gate
2
Continuous Drain Current @ T
= 25
°
C
I
A
A
D
Source
Pulsed Drain Current (t
≤
10
m
s)
I
p
DM
P
225
mW
A
D
PL
M
G
= Specific Device Code
= Date Code*
= Pb
−
Free Package
Operating and Storage
T
e
mperature Range
T , T
J
−
55 to
150
°
C
stg
(Note: Microdot may be in either location)
Thermal Resistance
−
Junction
−
to
−
Ambient
R
556
0.4
°
C/W
A
q
JA
*Date Code orientation may vary depending
upon manufacturing location.
Source Current (Body Diode)
I
S
Maximum Lead
T
e
mperature for Soldering
T
L
260
°
C
ORDERING INFORMATION
Purposes, 1/8
″
from case for 10 s
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
NTR0202PLT1G
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe &
Reel
NTR0202PLT3G
NVTR0202PLT1G
SOT
−
23
(Pb
−
Free)
10000 /
T
a
pe &
Reel
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
June, 2019
−
Rev. 6
NTR0202PL/D
NTR0202PL, NVTR0202PL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
(BR)DSS
(V =
0
V
, I
=
−
10
m
A)
−
20
V
GS
D
(Positive
T
e
mperature Coefficient)
33
mV/
°
C
Zero Gate Voltage Drain Current
I
m
A
DSS
GSS
(V =
−
20
V
, V
= 0 V, T
=
2
5
°
C)
−
1.0
−
10
DS
GS
J
(V =
−
20
V
, V
= 0 V, T
=
1
50
°
C)
DS
GS
J
Gate
−
Body Leakage Current (V
=
20
V
, V
= 0
V
)
I
100
nA
GS
DS
Gate Threshold Voltage
V
GS(th)
DS(on)
(V =
V ,
I =
−
250
m
A)
−
1.1
−
1.9
−
2.3
V
DS
GS
D
(Negative
T
e
mperature Coefficient)
3.0
mV/
°
C
Static Drain
−
to
−
Source On
−
Resistance
R
W
(V =
−
10
V
, I
=
−
200 mA)
0.55
0.80
0.80
1.10
GS
D
(V =
−
4.5
V
, I
=
−
50 mA)
GS
D
Forward Transconductance
(V =
−
10
V
, I
=
−
200 mA)
g
fs
0.5
Mhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
70
74
26
pF
ns
iss
(V =
−
5.0
V
, V
= 0 V,
DS
GS
Output Capacitance
C
oss
F = 1.0 MHz)
Reverse Transfer Capacitance
Turn
−
On Delay Time
Rise Time
C
rss
t
3.0
6.0
18
d(on)
t
r
(V =
−
15 V, I
=
−
200 mA,
DD
GS
D
V
=
−
10
V
, R
=
6
.0
W
)
G
Turn
−
Off Delay Time
Fall Time
t
d(off)
t
4
f
T
o
tal Gate Charge
Q
2.18
0.41
0.40
nC
TOT
(V =
−
15 V, I
=
−
200 mA,
DS
D
Gate
−
Source Charge
Gate
−
Drain Charge
Q
GS
GD
V
=
−
10 V)
GS
Q
V
SD
V
(I =
−
400 mA, V
= 0 V)
−
0.8
−
0.65
−
1.0
S
GS
(I =
−
400 mA, V
= 0 V, T
= 150
°
C)
S
GS
J
Reverse Recovery Time
t
11.8
9
ns
rr
(I =
−
1.0 A, V
= 0 V,
S
GS
t
a
dI /dt
= 100 A/
m
s)
S
t
b
3
Reverse Recovery Stored Charge
(I =
−
1.0 A, V
= 0 V,
Q
0.007
m
C
S
GS
RR
dI /dt
= 100 A/
m
s)
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
3. Switching
characteristics are independent of operating junction temperature.
2
NTR0202PL, NVTR0202PL
0.75
0.5
0.25
0
1
V
DS
≥
−
10 V
V
GS
=
−
10 V
−
6 V
T =
25
°
C
J
0.75
0.5
0.25
0
−
4 V
−
5.5 V
−
5 V
T =
125
°
C
J
−
3.5 V
−
3 V
T =
25
°
C
J
−
4.5 V
T =
40
°
C
J
−
2.5 V
0
0.25
0.5
0.75
1.0
0
1
2
3
4
5
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1.0
1.5
1
T =
150
°
C
J
V
GS
=
−
4.5 V
0.75
V
GS
=
−
10 V
T =
25
°
C
J
0.5
0.5
T =
40
°
C
J
0.25
0
0
0.125
0.25
0.375
0.5
0.125 0.25
0.375
0.5
0.625 0.75
0.875 1.0
−
I ,
DRAIN CURRENT (AMPS)
D
−
I ,
DRAIN CURRENT (AMPS)
D
Figure 3. On
−
Resistance versus Drain Current
Figure 4. On
−
Resistance versus Drain
Current and Gate Voltage
2.5
2
1000
100
10
V
GS
= 0 V
T =
150
°
C
J
1.5
1
I
V
=
−
0.05 A
D
=
−
4.5 V
GS
I
V
=
−
0.2 A
D
=
−
10 V
GS
1
T =
25
°
C
J
0.5
0
0.1
−
40
−
15
10
35
60
85
110
135 150
2
6
10
14
18
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage
Temperature
Current versus Voltage
3
NTR0202PL, NVTR0202PL
10
100
80
60
40
20
0
Q
T =
25
°
C
T
J
C
iss
7.5
C
rss
C
C
iss
iss
5
2.5
0
Q
Q
2
1
C
oss
T =
25
°
C
D
J
C
C
rss
rss
I
=
−
0.4 A
10
5
0
5
10
15
20
0
0.5
1
1.5
2
−
V
GS
−
V
DS
−
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE VOLTAGE
Q ,
TOTAL GATE CHARGE (nC)
G
(VOLTS)
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total
Figure 7. Capacitance Variation
Charge
100
10
1
1
0.75
0.5
V
=
−
16 V
=
−
0.2 A
=
−
4.5 V
DD
V
= 0 V
GS
I
D
T =
25
°
C
J
V
GS
t
d(off)
t
f
t
r
t
d(on)
0.25
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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