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NXH80T120L2Q0S2G/S2TG,  

NXH80T120L2Q0P2G  

Q0PACK Module  

The NXH80T120L2Q0S2/P2G

 

is a power module containing a  

T

−

type neutral point clamped (NPC) three level inverter stage. The  

integrated field stop trench IGBTs and fast recovery diodes provide  

lower conduction losses and switching losses, enabling designers to  

achieve high efficiency and superior reliability.  

Features  

•

Low Switching Loss  

•

Low V  

CES

A

T  

•

Compact 65.9 mm x 32.5 mm x 12 mm Package  

•

Thermistor  

•

Options with pre

−

applied thermal interface material (TIM) and  

without pre

−

applied TIM  

Q0PACK  

CASE 180AA  

PRESS

−

FIT PINS  

Q0PACK  

CASE 180AB  

SOLDERABLE PINS  

•

Options with solderable pins and press

−

fit pins  

Typical Applications  

•

Solar Inverter  

•

Uninterruptable Power Supplies  

MARKING DIAGRAMS  

NXH80T120L2Q0P2G  

ATYYWW  

15,16  

Half Bridge  

IGB

T

s &

D

iodes  

D1  

T1  

1200V/80A  

17  

18  

NXH80T120L2Q0S2G  

ATYYWW  

D2  

T2  

D3  

5,14  

8,9,10,

1

1  

NXH80T120L2Q0S2G = Specific Device Code  

G = Pb

−

free Package  

A = Assembly Site Code  

T3  

7

6

13 12  

T =

T

e

st Site Code  

YYWW =

Y

ear and Work Week Code  

Neutral Point  

IGB

T

s &

D

iodes  

650V/50A  

D4  

T4  

2

PIN ASSIGNMENTS  

1

19  

20  

3,4  

NTC  

12 13

 

14  

15 16  

4 3  

17 18  

19  

Figure 1. Schematic Diagram  

11  

10  

9

20  

8

7 6  

5

2 1  

ORDERING INFORMATION  

See detailed ordering and shipping information in the  

dimensions section on

of this data sheet.  

©

Semiconductor Components Industries, LLC, 2017  

1

Publication Order Number:  

NXH80T120L2Q0S2G/D  

May, 2019

−

Rev. 6  

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

Table 1. MAXIMUM RATINGS  

Rating  

Symbol  

Value  

Unit  

HALF BRIDGE IGBT  

Collector

−

Emitter Voltage  

Gate

−

Emitter Voltage  

V

1200  

20  

V

V

CES  

V

GE  

Continuous Collector Current @ T

 

= 80

°

C (T

 

= 175

°

C)  

I

C

67  

A

h

J

Pulsed Collector Current (T

 

= 175

°

C)  

I

201  

158  

5

A

J

Cpulse  

Maximum Power Dissipation @ T

 

= 80

°

C (T

 

= 175

°

C)  

P

tot  

W

m

s  

°

C  

°

C  

h

J

Short Circuit Withstand Time @ V

 

= 15

V

, V

 

=

6

00

V

, T

 

v

150

°

C  

T

sc  

GE  

CE  

J

Minimum Operating Junction

T

e

mperature  

T

−

40  

150  

JMIN  

Maximum Operating Junction

T

e

mperature  

NEUTRAL POINT IGBT  

T

JMAX  

Collector

−

Emitter Voltage  

V

600  

20  

V

V

CES  

Gate

−

Emitter Voltage  

V

GE  

Continuous Collector Current @ T

 

= 80

°

C (T

 

= 175

°

C)  

I

C

49  

A

h

J

Pulsed Collector Current (T

 

= 175

°

C)  

I

147  

86  

A

J

Cpulse  

Maximum Power Dissipation @ T

 

= 80

°

C (T

 

= 175

°

C)  

P

tot  

W

m

s  

°

C  

°

C  

h

J

Short Circuit Withstand Time @ V

 

= 15

V

, V

 

=

4

00

V

, T

 

v

150

°

C  

T

sc  

5

GE  

CE  

J

Minimum Operating Junction

T

e

mperature  

T

−

40  

150  

JMIN  

Maximum Operating Junction

T

e

mperature  

HALF BRIDGE DIODE  

T

JMAX  

Peak Repetitive Reverse Voltage  

V

1200  

28  

V

A

RRM  

Continuous Forward Current @ T

 

= 80

°

C (T

 

= 175

°

C)  

I

F

h

J

Repetitive Peak Forward Current (T

 

= 175

°

C, t

 

limited by T  

)

I

FRM  

84  

A

J

p

Jmax  

Maximum Power Dissipation @ T

 

= 80

°

C (T

 

= 175

°

C)  

P

tot  

73  

W

°

C  

°

C  

h

J

Minimum Operating Junction

T

e

mperature  

T

JMIN  

−

40  

150  

Maximum Operating Junction

T

e

mperature  

NEUTRAL POINT DIODE  

T

JMAX  

Peak Repetitive Reverse Voltage  

V

650  

33  

V

A

RRM  

Continuous Forward Current @ T

 

= 80

°

C (T

 

= 175

°

C)  

I

F

h

J

Repetitive Peak Forward Current (T

 

= 175

°

C, t

 

limited by T  

)

I

FRM  

99  

A

J

p

Jmax  

Maximum Power Dissipation @ T

 

= 80

°

C (T

 

= 175

°

C)  

P

tot  

63  

W

°

C  

°

C  

h

J

Minimum Operating Junction

T

e

mperature  

T

JMIN  

−

40  

150  

Maximum Operating Junction

T

e

mperature  

THERMAL PROPERTIES  

T

JMAX  

Storage

T

e

mperature range  

T

stg  

−

40 to 125  

°

C  

INSULATION PROPERTIES  

Isolation test voltage, t = 1 sec, 60 Hz  

Creepage distance  

V

is  

3000  

12.7  

V

RMS  

mm  

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  

should not be assumed, damage may occur and reliability may be affected.  

1. Refer

 

to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe  

Operating parameters.  

Table 2. RECOMMENDED OPERATING RANGES  

Rating  

Symbol  

Min  

Max  

Unit  

Module Operating Junction

T

e

mperature  

T

J

−

40  

150  

°

C  

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  

the Recommended Operating Ranges limits may affect device reliability.  

2

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

Table 3. ELECTRICAL CHARACTERISTICS

T =

 

25

°

C unless otherwise noted  

J

Parameter  

Test Conditions  

Symbol  

Min  

Typ  

Max  

Unit  

HALF BRIDGE IGBT CHARACTERISTICS  

Collector

−

Emitter Cutoff Current  

Collector

−

Emitter Saturation Voltage  

V

= 0

V

, V

 

=

1

200 V  

I

CES  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

2.05  

2.10  

5.45  

–

300  

2.85  

–

m

A  

GE  

CE  

V

= 15

V

, I

 

=

8

0 A, T

 

= 25

°

C  

V

V

V

GE  

C

J

CE(sat)  

V

GE  

= 15

V

, I

 

=

8

0 A, T

 

= 150

°

C  

C J  

Gate

−

Emitter Threshold Voltage  

Gate Leakage Current  

Turn

−

on Delay Time  

V

= V

 

, I

 

= 1.5 mA  

6.4  

300  

–

V

GE  

CE  

C

GE(TH)  

V

= 20

V

, V

 

= 0 V  

I

GES  

nA  

ns  

GE  

CE  

T =

 

25

°

C  

t

61  

J

d(on)  

V

V

= 350

V

, I

 

=

6

0 A  

CE  

C

Rise Time  

t

r

28  

–

= 15

V

,

 

R =

 

4

.7

W  

G

GE  

Turn

−

off Delay Time  

t

205  

41  

–

d(off)  

Fall Time  

t

f

–

Turn

−

on Switching Loss per Pulse  

Turn off Switching Loss per Pulse  

Turn

−

on Delay Time  

E

550  

1100  

58  

–

m

J  

on  

off  

E

–

T =

 

125

°

C  

t

t

–

ns  

J

d(on)  

V

V

= 350

V

, I

 

=

6

0 A  

CE  

C

Rise Time  

t

r

30  

–

= 15

 

V

, R

 

=

4

.7

W  

G

GE  

Turn

−

off Delay Time  

230  

63  

–

d(off)  

Fall Time  

t

f

–

Turn

−

on Switching Loss per Pulse  

Turn off Switching Loss per Pulse  

Input Capacitance  

E

on  

E

off  

720  

1700  

19400  

400  

340  

800  

0.60  

–

m

J  

–

V

CE  

= 20

V

, V

 

= 0 V, f =

1

0 kHz  

C

–

pF  

GE  

ies  

oes  

Output Capacitance  

C

–

Reverse Transfer Capacitance  

T

o

tal Gate Charge  

C

–

res  

V

= 600

V

, I

 

=

8

0 A, V

 

= +15 V  

Q

g

–

nC  

CE  

C

GE  

Thermal Resistance

−

chip

−

to

−

heatsink  

Thermal grease,  

Thickness = 76

m

m 2%,

 

l

= 2.9 W/mK  

R

–

°

C/W  

thJH  

NEUTRAL POINT DIODE CHARACTERISTICS  

Diode Forward Voltage  

I =

 

60 A, T

 

= 25

°

C  

V

F

–

–

–

–

–

–

–

–

–

–

–

–

–

1.7  

1.6  

2.2  

–

V

F

J

I =

 

60 A, T

 

= 150

°

C  

F

J

Reverse Recovery Time  

T =

 

25

°

C  

t

rr  

39  

–

ns  

m

C  

A

J

V

CE  

= 350

V

, I

 

=

6

0 A  

C

Reverse Recovery Charge  

Q

rr  

RRM  

1.1  

–

V

= 15

 

V

, R

 

=

4

.7

W  

G

GE  

Peak Reverse Recovery Current  

Peak Rate of Fall of Recovery Current  

Reverse Recovery Energy  

I

48  

–

di/dt  

3400  

400  

78  

–

A/

m

s  

m

J  

E

rr  

–

Reverse Recovery Time  

T =

 

125

°

C  

t

rr  

–

ns  

J

V

CE  

= 350

V

, I

 

=

6

0 A  

C

Reverse Recovery Charge  

Q

rr  

RRM  

2.0  

–

m

C  

A

V

= 15

 

V

, R

 

=

4

.7

W  

G

GE  

Peak Reverse Recovery Current  

Peak Rate of Fall of Recovery Current  

Reverse Recovery Energy  

I

59  

–

di/dt  

1600  

550  

1.50  

–

A/

m

s  

m

J  

E

rr  

–

Thermal Resistance

−

chip

−

to

−

heatsink  

Thermal grease,  

Thickness = 76

m

m 2%,

 

l

= 2.9 W/mK  

R

–

°

C/W  

thJH  

NEUTRAL POINT IGBT CHARACTERISTICS  

Collector

−

Emitter Cutoff Current  

V

= 0

V

, V

 

=

6

00 V  

I

–

–

–

–

–

–

250  

1.75  

–

m

A  

GE  

CE  

CES  

Collector

−

Emitter Saturation Voltage  

V

= 15

V

, I

 

=

5

0 A, T

 

= 25

°

C  

V

V

1.40  

1.50  

5.45  

–

V

GE  

C

J

CE(sat)  

V

GE  

= 15

V

, I

 

=

5

0 A, T

 

= 150

°

C  

C J  

Gate

−

Emitter Threshold Voltage  

V

GE  

= V

 

, I

 

= 1.2 mA  

6.4  

200  

V

CE  

C

GE(TH)  

Gate Leakage Current  

V

= 20

V

, V

 

= 0 V  

I

GES  

nA  

GE  

CE  

3

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

Table

T =

 

25

°

C unless otherwise noted  

J

Parameter  

Test Conditions  

Symbol  

Min  

Typ  

Max  

Unit  

NEUTRAL POINT IGBT CHARACTERISTICS  

Turn

−

on Delay Time  

T =

 

25

°

C  

t

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

ns  

J

d(on)  

30  

19  

V

= 350

V

, I

 

=

6

0 A  

CE  

C

Rise Time  

t

r

V

GE  

= 15

 

V

, R

 

=

4

.7

W  

G

Turn

−

off Delay Time  

Fall Time  

t

110  

23  

d(off)  

t

f

Turn

−

on Switching Loss per Pulse  

Turn off Switching Loss per Pulse  

Turn

−

on Delay Time  

Rise Time  

E

on  

m

J  

800  

480  

32  

E

off  

T =

 

125

°

C  

t

t

ns  

J

d(on)  

V

CE  

= 350

V

, I

 

=

6

0 A  

C

t

r

18  

V

GE  

= 15

 

V

, R

 

=

4

.7

W  

G

Turn

−

off Delay Time  

Fall Time  

120  

35  

d(off)  

t

f

Turn

−

on Switching Loss per Pulse  

Turn off Switching Loss per Pulse  

E

on  

m

J  

1100  

E

off  

880  

9400  

280  

Input Capacitance  

V

= 20

V

, V

 

= 0 V, f =

1

0 kHz  

C

–

–

–

–

–

–

–

–

–

–

pF  

CE  

GE  

ies  

Output Capacitance  

C

oes  

Reverse Transfer Capacitance  

T

o

tal Gate Charge  

C

250  

res  

V

CE  

= 480

V

, I

 

=

5

0 A, V

 

= +15 V  

Q

g

395  

nC  

C

GE  

Thermal Resistance

−

chip

−

to

−

heatsink  

Thermal grease,  

Thickness = 76

m

m 2%,

 

l

= 2.9 W/mK  

R

1.10  

°

C/W  

thJH  

HALF BRIDGE DIODE CHARACTERISTICS  

Diode Forward Voltage  

I =

 

40 A, T

 

= 25

°

C  

V

F

–

–

–

–

–

–

–

–

–

–

–

–

–

2.11  

1.50  

45  

3.10  

–

V

F

J

I =

 

40 A, T

 

= 150

°

C  

F

J

Reverse recovery time  

T =

 

25

°

C  

t

rr  

–

ns  

m

C  

A

J

V

CE  

= 350

V

, I

 

=

6

0 A  

C

Reverse recovery charge  

Q

rr  

RRM  

2.7  

–

V

= 15

 

V

, R

 

=

4

.7

W  

G

GE  

Peak reverse recovery current  

Peak rate of fall of recovery current  

Reverse recovery energy  

I

110  

–

di/dt  

7100  

1000  

185  

6

–

A/

m

s  

m

J  

E

rr  

–

Reverse recovery time  

T =

 

125

°

C  

t

rr  

–

ns  

J

V

CE  

= 350

V

, I

 

=

6

0 A  

C

Reverse recovery charge  

Q

rr  

RRM  

–

m

C  

A

V

= 15

 

V

, R

 

=

4

.7

W  

G

GE  

Peak reverse recovery current  

Peak rate of fall of recovery current  

Reverse recovery energy  

I

150  

5900  

1900  

1.30  

–

di/dt  

–

A/

m

s  

m

J  

E

rr  

–

Thermal Resistance

−

chip

−

to

−

heatsink  

Thermal grease,  

Thickness = 76

m

m 2%,

 

l

= 2.9 W/mK  

R

–

°

C/W  

thJH  

THERMISTOR CHARACTERISTICS  

Nominal resistance  

Nominal resistance  

Deviation of R25  

T = 25

°

C  

R

–

–

22  

1486  

–

–

–

5

–

–

–

–

k

W  

W

25  

T = 100

°

C  

R

100  

D

R/R  

−

5  

–

%

Power dissipation  

Power dissipation constant  

B

−

value  

P

200  

2

mW  

mW/K  

K

D

–

B(25/50), tolerance

 

3%  

B(25/100), tolerance

 

3%  

–

3950  

3998  

B

−

value  

–

K

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  

performance may not be indicated by the Electrical Characteristics if operated under different conditions.  

4

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Half Bridge IGBT and Neutral Point Diode  

300  

250  

200  

150  

100  

300  

V

= 20 V to 13 V  

GE  

T =

 

25

°

C  

11 V  

J

250  

200  

150  

100  

11 V  

10 V  

V

GE  

= 20 V to 13 V  

T =

 

150

°

C  

J

10 V  

9 V  

9 V  

8 V  

7 V  

50  

0

50  

0

8 V  

7 V  

0

1

2

3

4

5

0

1

2

3

4

5

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

Figure 2. Typical Output Characteristics  

Figure 3. Typical Output Characteristics  

180  

160  

140  

120  

100  

80  

100  

90  

80  

70  

60  

50  

40  

30  

20  

60  

T =

 

150

°

C  

J

T =

 

25

°

C  

J

40  

T =

 

150

°

C  

T =

 

25

°

C  

J

J

20  

0

10  

0

0

3

6

9

12  

15  

0

0.5  

1.0  

1.5  

2.0  

2.5  

V

GE  

, GATE

−

EMITTER VOLTAGE (V)  

V , FORWARD VOLTAGE (V)  

F

Figure 4. Typical Transfer Characteristics  

Figure 5. Diode Forward Characteristics  

Figure 6. Typical Turn On Loss vs. IC  

Figure 7. Typical Turn Off Loss vs. IC  

5

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Half Bridge IGBT and Neutral Point Diode  

Figure 8. Typical On Switching Times vs. IC  

Figure 9. Typical Off Switching Times vs. IC  

Figure 10. Typical On Rise Times vs. IC  

Figure 11. Typical Off Fall Times vs. IC  

Figure 12. Typical Reverse Recovery Time vs.  

IC  

Figure 13. Typical Reverse Recovery Charge  

vs. IC  

6

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Half Bridge IGBT and Neutral Point Diode  

Figure 14. Typical Reverse Recovery Peak  

Current vs. IC  

Figure 15. Typical Diode Current Slope vs. IC  

16  

14  

12  

10  

8

6

4

V

= 600 V  

= 80 A  

CE  

2

0

I

C

0

200  

400  

600  

800  

1000  

Q ,

 

GATE CHARGE (nC)  

G

Figure 16. Typical Reverse Recovery Energy  

vs. IC  

Figure 17. Gate Voltage vs. Gate Charge  

7

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Half Bridge IGBT and Neutral Point Diode  

1

50%  

20%  

10%  

5%  

0.1  

2%  

1%  

0.01  

Single Pulse  

0.0001  

0.001  

0.00001  

0.001  

0.01  

0.1  

1

10  

PULSE ON TIME (s)  

Figure 18. IGBT Transient Thermal Impedance  

10  

1

50%  

20%  

10%  

5%  

0.1  

2%  

1%  

Single Pulse  

0.0001  

0.01  

0.00001  

0.001  

0.01  

0.1  

1

10  

PULSE ON TIME (s)  

Figure 19. Diode Transient Thermal Impedance  

1000  

100  

10  

200  

180  

160  

140  

120  

100  

80  

50

m

s  

100

m

s  

dc operation  

Single Nonrepetitive  

60  

1 ms  

Pulse T

 

= 25

°

C  

C

1

40  

Curves must be derated  

linearly with increase in  

temperature  

20  

V

GE  

=

15

V

, T

 

= T  

−

25

°

C  

J

Jmax  

0.1  

0

1.0  

10  

100  

1000  

10000  

0

200  

400  

600  

800  

1000 1200

 

1400  

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

Figure 20. T1 & T4 FBSOA  

Figure 21. T1 & T4 RBSOA  

8

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Neutral Point IGBT and Half Bridge Diode  

300  

250  

200  

150  

100  

300  

V

= 20 V to 15 V  

GE  

V

= 20 V to 17 V  

GE  

15 V  

13 V  

250  

200  

150  

100  

13 V  

T =

 

25

°

C  

J

T =

 

150

°

C  

J

11 V  

10 V  

11 V  

10 V  

9 V  

8 V  

7 V  

50  

0

50  

0

7 V  

9 V  

8 V  

0

1

2

3

4

5

0

1

2

3

4

5

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

Figure 22. Typical Output Characteristics  

Figure 23. Typical Output Characteristics  

180  

160  

140  

120  

100  

80  

100  

90  

80  

70  

60  

50  

40  

30  

20  

60  

T =

 

150

°

C  

J

T =

 

25

°

C  

J

40  

T =

 

150

°

C  

T =

 

25

°

C  

J

J

20  

0

10  

0

0

3

6

9

12  

15  

0

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

V

GE  

, GATE

−

EMITTER VOLTAGE (V)  

V , FORWARD VOLTAGE (V)  

F

Figure 24. Typical Transfer Characteristics  

Figure 25. Diode Forward Characteristics  

Figure 26. Typical Turn On Loss vs. IC  

Figure 27. Typical Turn Off Loss vs. IC  

9

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Neutral Point IGBT and Half Bridge Diode  

Figure 28. Typical On Switching Times vs. IC  

Figure 29. Typical Off Switching Times vs. IC  

Figure 30. Typical On Rise Times vs. IC  

Figure 31. Typical Off Fall Times vs. IC  

Figure 32. Typical Reverse Recovery Time vs.  

IC  

Figure 33. Typical Reverse Recovery Charge  

vs. IC  

10  

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Neutral Point IGBT and Half Bridge Diode  

Figure 34. Typical Reverse Recovery Peak  

Current vs. IC  

Figure 35. Typical Diode Current Slope vs. IC  

16  

14  

12  

10  

8

6

4

V

= 480 V  

= 50 A  

CE  

2

0

I

C

0

200  

400  

600  

800  

1000  

Q ,

 

GATE CHARGE (nC)  

G

Figure 36. Typical Reverse Recovery Energy  

vs. IC  

Figure 37. Gate Voltage vs. Gate Charge  

11  

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Neutral Point IGBT and Half Bridge Diode  

10  

1

50%  

20%  

10%  

5%  

0.1  

2%  

1%  

0.01  

Single Pulse  

0.001  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

PULSE ON TIME (s)  

Figure 38. IGBT Transient Thermal Impedance  

10  

1

50%  

20%  

10%  

5%  

0.1  

2%  

1%  

Single Pulse  

0.0001  

0.01  

0.00001  

0.001  

0.01  

0.1  

1

10  

PULSE ON TIME (s)  

Figure 39. Diode Transient Thermal Impedance  

180  

160  

1000  

100  

10  

140  

50

m

s  

120  

100  

100

m

s  

1 ms  

80  

60  

40  

20  

0

Single Nonrepetitive  

Pulse T

 

= 25

°

C  

1

C

Curves must be derated  

linearly with increase in  

temperature  

dc operation  

100  

V

GE  

=

15

V

, T

 

= T

 

−

25

°

C  

Jmax  

J

0.1  

1.0  

10  

1000  

0

100  

200  

300  

400  

500  

600  

700 800  

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

V

CE  

, COLLECTOR

−

EMITTER VOLTAGE (V)  

Figure 40. T2 & T3 FBSOA  

Figure 41. T2 & T3 RBSOA  

12  

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

TYPICAL CHARACTERISTICS

−

Thermistor  

24K  

20K  

16K  

12K  

8K  

4K  

0

25  

45  

65  

85  

105  

125  

TEMPERATURE (

°

C)  

Figure 42. Thermistor Characteristics  

ORDERING INFORMATION  

Orderable Part Number  

NXH80T120L2Q0P2G  

Marking  

Package  

Shipping  

NXH80T120L2Q0P2G  

Q0PACK

−

Case 180AA  

(Pb

−

Free and Halide

−

Free)  

24 Units / Blister Tray  

NXH80T120L2Q0S2G  

NXH80T120L2Q0S2TG  

NXH80T120L2Q0S2G  

NXH80T120L2Q0S2TG  

Q0PACK

−

Case 180AB  

24 Units / Blister Tray  

24 Units / Blister Tray  

(Pb

−

Free and Halide

−

Free)  

Q0PACK

−

Case 180AB  

with pre

−

applied thermal interface material  

(TIM)  

(Pb

−

Free and Halide

−

Free)  

13  

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

PACKAGE DIMENSIONS  

PIM20, 55×32.5 / Q0PACK  

CASE 180AA  

ISSUE D  

14  

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

PACKAGE DIMENSIONS  

PIM20, 55×32.5 / Q0PACK  

CASE 180AB  

ISSUE D  

15  

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  

PACKAGE DIMENSIONS  

PIM20, 55×32.5 / Q0PACK  

CASE 180AB  

ISSUE D  

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