onsemi-PZT651T1G
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DATA SHEET
NPN Silicon Planar
Epitaxial
T
r
ansistor
SOT
−
223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
PZT651
4
This NPN Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT
−
223 package which is designed for medium power surface
mount applications.
1
2
3
SOT
−
223
CASE 318E
−
04
STYLE 1
SOT
−
223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
COLLECTOR 2, 4
Features
•
High Current
BASE
1
•
The SOT
−
223 Package can be Soldered Using Wave or Reflow
•
PNP Complement is PZT751T1G
EMITTER 3
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
MARKING DIAGRAM
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
AYW
651
G
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
1
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
Symbol
Value
60
Unit
Vdc
Vdc
Vdc
Adc
W
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
V
CEO
V
CBO
V
EBO
80
G
= Pb
−
Free Package
5.0
2.0
(Note: Microdot may be in either location)
I
C
T
o
tal Power Dissipation
P
D
Derate above 25
°
C
0.8
6.4
A
ORDERING INFORMATION
mW/
°
C
°
C
†
Device
Package
Shipping
Storage
T
e
mperature Range
Junction
T
e
mperature
T
−
65 to 150
stg
PZT651T1G
SOT
−
223
(Pb
−
Free)
1,000 /
T
a
pe & Reel
T
150
°
C
J
THERMAL CHARACTERISTICS
Characteristic
SPZT651T1G
SOT
−
223
(Pb
−
Free)
1,000 /
T
a
pe & Reel
Symbol
Max
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance from
Junction
−
to
−
Ambient in Free Air
R
156
°
C/W
q
JA
Maximum
T
e
mperature for Soldering
Purposes
Time in Solder Bath
T
260
10
°
C
L
Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device
mounted on a FR
−
4 glass epoxy printed circuit board using minimum
recommended footprint.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
June, 2022
−
Rev. 11
PZT651T1/D
PZT651
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristics
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector
−
Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
10 mAdc, I
= 0)
60
80
5.0
−
−
−
C
B
Collector
−
Emitter Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
V
C
E
Emitter
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
Vdc
−
E
C
Base
−
Emitter Cutoff Current
(V =
4.0 Vdc)
EB
I
m
Adc
nAdc
EBO
0.1
100
Collector
−
Base Cutoff Current
I
CBO
(V =
80 Vdc, I
= 0)
−
CB
E
DC Current Gain
h
FE
−
(I =
50 mAdc, V
= 2.0 Vdc)
75
75
75
40
−
−
−
−
C
CE
(I =
500 mAdc, V
= 2.0 Vdc)
C
CE
(I =
1.0 Adc, V
= 2.0 Vdc)
C
CE
(I =
2.0 Adc, V
= 2.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltages
(I =
2.0 Adc, I
= 200 mAdc)
V
Vdc
CE(sat)
−
−
0.5
0.3
C
B
(I =
1.0 Adc, I
= 100 mAdc)
C
B
Base
−
Emitter Voltages
(I =
1.0 Adc, V
= 2.0 Vdc)
V
Vdc
Vdc
MHz
BE(on)
−
−
1.0
1.2
−
C
CE
Base
−
Emitter Saturation Voltage
(I =
1.0 Adc, I
= 100 mAdc)
V
BE(sat)
C
B
Current
−
Gain — Bandwidth
(I =
50 mAdc, V
= 5.0 Vdc, f = 100 MHz)
f
T
75
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle = 2.0%
2
PZT651
TYPICAL CHARACTERISTICS
2.0
1.8
300
270
V
CE
= 2.0 V
T =
125
°
C
J
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
240
210
180
150
120
90
25
°
C
V
@ I
/I =
10
C B
BE(sat)
-ꢀ55
°
C
V
BE(on)
@ V
= 2.0 V
CE
60
V
@ I
/I =
10
C B
CE(sat)
30
0
10
20
50 100 200
500 1.0
A 2.0
A 4.0
A
50
100
200
500
1.0 A
2.0 A
4.0 A
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. Typical DC Current Gain
Figure 2. On Voltages
10
1
1.0
0.9
0.8
0.7
10
m
s, 1
m
s
100
m
s
1 ms
10 ms
100 ms
T =
25
°
C
J
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1 s
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
I =
2.0 A
C
0.01
Single Pulse
T
e
st @ T
= 25
°
C
A
0.001
0.01
0.1
1
10
100
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
200 500
I ,
BASE CURRENT (mA)
B
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 3. Collector Saturation Region
Figure 4. Safe Operating Area
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1.
ANODE
STYLE 3:
STYLE 4:
PIN 1.
SOURCE
STYLE 5:
PIN 1.
DRAIN
PIN 1.
GATE
2. DRAIN
2. CATHODE
3. NC
2. DRAIN
3. GATE
4. DRAIN
2. GATE
3. SOURCE
4. DRAIN
3. SOURCE
4. GATE
4. CATHODE
STYLE 6:
PIN 1.
RETURN
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
ANODE 1
2. CATHODE
3. ANODE
2
CANCELLED
PIN 1.
INPUT
2. GROUND
3. LOGIC
PIN 1.
CATHODE
2. ANODE
2. INPUT
3. OUTPUT
4. INPUT
3. GATE
4. CATHODE
4. GROUND
4. ANODE
STYLE 11:
PIN 1.
MT 1
STYLE 12:
STYLE 13:
PIN 1.
INPUT
2. OUTPUT
3. NC
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. MT
2
3. GATE
4. MT
2
4. OUTPUT
GENERIC
MARKING DIAGRAM*
AYW
XXXXX
G
G
1
A
Y
= Assembly Location
=
Y
e
ar
W
= Work Week
XXXXX =
Specific Device Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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