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September 2014  

MPSA06 / MMBTA06 / PZTA06  

NPN General-Purpose Amplifier  

Features  

• This

 

device is designed for general-purpose amplifier  

applications at collector currents to 300 mA.  

• Sourced

 

from process 12.  

MPSA06  

MMBTA06  

PZTA06  

C

C

E

E

C

B

B

SOT-23  

Mark: 1G  

TO-92  

SOT-223  

E B C  

Ordering Information  

Part Number  

MPSA06  

Top Mark  

MPSA06  

1G  

Package  

Packing Method  

Bulk  

TO-92 3L  

SOT-23 3L  

SOT-223 4L  

MMBTA06  

PZTA06  

T

a

pe and Reel  

T

a

pe and Reel  

A06  

Absolute Maximum Ratings

(1), (2)  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

Parameter  

Value  

Unit  

V

Collector-Emitter Voltage  

Collector-Base Voltage  

Emitter-Base Voltage  

80  

80  

V

4.0  

V

Collector Current – Continuous  

500  

mA  

°

C  

T

J,

T

STG

Operating and Storage Junction

T

e

mperature Range  

Notes:  

1. These ratings are based on a maximum junction temperature of 150

°

C.  

-55 to +150  

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or  

low-duty-cycle operations.  

© 1997 Fairchild Semiconductor Corporation  

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0  

Thermal Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Max.  

Symbol  

Parameter  

T

o

tal Device Dissipation  

Unit  

MPSA06  

625  

MMBTA06

(3)

PZTA06

(4)  

350  

2.8  

1000  

8.0  

mW  

mW/

°

C  

°

C/W  

P

D  

Derate Above 25

°

C  

Thermal Resistance, Junction-to-Case  

5.0  

R

θ

JC  

R

θ

JA  

83.3  

200  

Thermal Resistance, Junction-to-Ambient  

357  

125  

°

C/W  

Notes:  

3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.  

4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm

2

.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Conditions  

Min.  

Max.  

Unit  

Off Characteristics  

V

(BR)CEO

Collector-Emitter Breakdown Voltage

(5)

I

C

= 1.0 mA, I

B

= 0  

80  

V

V

V

(BR)EBO

Emitter-Base Breakdown Voltage  

I

E

= 100

μ

A, I

C

= 0  

V

CE

= 60 V, I

B

= 0  

V

CB

= 80 V, I

E

= 0  

4.0  

I

CEO  

I

CBO  

Collector Cut-Off Current  

Collector Cut-Off Current  

0.1  

0.1  

μ

A  

μ

A  

On Characteristics  

I

C

= 10 mA, V

CE

= 1.0 V  

I

C

= 100 mA, V

CE

= 1.0 V  

I

C

= 100 mA, I

B

= 10 mA  

I

C

= 100 mA, V

CE

= 1.0 V  

100  

100  

h

FE  

DC Current Gain  

V

CE(sat)  

V

BE(on)  

Collector-Emitter Saturation Voltage  

Base-Emitter On Voltage  

0.25  

1.2  

V

V

Small Signal Characteristics  

f

T

Current Gain – Bandwidth Product  

Notes:  

I

C

= 10 mA, V

CE

= 2.0

V

,  

f = 100 MHz  

100  

MHz  

5. Pulse test: pulse width

≤

300

μ

s, duty cycle

≤

2%.  

© 1997 Fairchild Semiconductor Corporation  

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0  

2

Typical Performance Characteristics  

2

0

0  

0

.

5  

0

.

4  

0

.

3  

0

.

2  

0

.

1  

0

β

= 10  

V

C

E

= 1V  

125 °C  

1

5

0  

125 °C  

25 °C  

1

0

0  

25 °C  

– 40 °C  

50  

– 40 °C  

0

.

1  

1

1 0  

10 0  

1

0

0 0  

0

.

0

0

1  

0.

0

1  

0

.

1  

I

C

– COLLECTOR C

U

R

R

E

N

T

 

(

m

A

)  

I

C

–

C

O

LLEC

T

O

R

C

U

 

R

R

E

NT (A)  

Figure 2. Collector-Emitter Saturation Voltage vs.  

Collector Current  

Figure 1. Typical Pulsed Current Gain vs.  

Collector Current  

β

= 10  

1

1

– 40 °C  

0

.

8  

– 40 °C  

0

.

8  

25 °C  

25 °C  

0

.

6  

125 °C  

125 °C  

0

.

6  

0

.

4  

0

.

4  

V

=

5

V  

CE  

0

.

2  

0

1

10  

1

0

0  

1

0

0

0  

0

.

1  

1

1 0  

10 0  

1

0

0

0  

I

C

– COLLECTOR C

U

R

R

E

N

T

 

(

m

A

)  

I

C

– COLLECTOR C

U

R

R

E

N

T

 

(

m

A

)  

Figure 3. Base-Emitter Saturation Voltage vs.  

Collector Current  

Figure 4. Base-Emitter On Voltage vs.  

Collector Current  

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

10  

V

= 80 V  

CB  

I

C

=10mA  

I

C

=50mA  

1

0

.

1  

I

C

=100mA  

I

C

=250mA  

I

C

=500mA  

0

.

0

1  

0.

0

0

1  

25  

50  

75  

1

0

0  

1

2

5  

0.01  

0.1  

1

10  

T

A

– A

M

B

I

E

N

T

T

EM

P

E

R

A

T

U

R

E (

 

C

)  

°

I

B

– Base Current (mA)  

Figure 5. Collector Cut-Off Current vs.  

Ambient Temperature  

Figure 6. Collector Saturation Region  

© 1997 Fairchild Semiconductor Corporation  

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0  

3

Typical Performance Characteristics

(Continued)  

100  

10  

1

117  

116  

115  

114  

113  

112  

111  

f = 1.0 MHz  

C

ib  

C

ob  

0.1  

0.1  

0.1  

1

10  

100  

1000  

1

10  

100  

RESISTANCE (k  

)

Ω

V

– COLLECTOR VO

L

TA

G

E (V)  

CE  

Figure 8. Input and Output Capacitance vs.  

Reverse Current  

Figure 7. Collector-Emitter Breakdown Voltage  

with Resistance Between Emitter-Base  

400  

1

V

= 5V  

CE  

350  

300  

250  

200  

150  

100  

SOT-223  

0.75  

TO-92  

0.5  

0.25  

0

SOT-23  

0

25  

50  

75  

100  

125  

150  

1

10  

20  

50  

100  

TEMPER

A

T

URE (

o

C)  

I

C

– COLLECTOR CURRENT (mA)  

Figure 9. Gain Bandwidth Product vs.  

Collector Current  

Figure 10. Power Dissipation vs.  

Ambient Temperature  

© 1997 Fairchild Semiconductor Corporation  

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0  

4

Physical Dimensions  

D

Figure 11. 3-LEAD, TO-92, MOLDED, STD STRAIGHT LEAD (NO EOL CODE)  

© 1997 Fairchild Semiconductor Corporation  

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0  

5

Physical Dimensions

(Continued)  

0.95  

2.92 0.20  

3

1.40  

+0.20  

-0.15  

1.30  

2.20  

1.00  

1

2

0.60  

0.37  

(0.29)  

0.95  

0.20  

A B  

1.90  

1.90  

LAND PATTERN  

RECOMMENDATION  

SEE DETAIL A  

1.20 MAX  

(0.93)  

0.10  

0.00  

0.10  

C

C

2.40 0.30  

NOTES: UNLESS OTHERWISE SPECIFIED  

GAGE PLANE  

A) REFERENCE

 

JEDEC REGISTRATION  

TO-236, VARIATION AB, ISSUE H.  

B) ALL

 

DIMENSIONS ARE IN MILLIMETERS.  

C) DIMENSIONS

 

ARE INCLUSIVE OF BURRS,  

MOLD FLASH AND TIE BAR EXTRUSIONS.  

D) DIMENSIONING

 

AND TOLERANCING PER  

ASME Y14.5M – 1994.  

0.23  

0.08  

0.25  

0.20 MIN  

(0.55)  

E) DRAWING

 

FILE NAME: MA03DREV10  

SEATING  

PLANE  

SCALE: 2X  

Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE  

© 1997 Fairchild Semiconductor Corporation  

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0  

6

Physical Dimensions

(Continued)  

Figure 13. MOLDED PACKAGIN

G

,

S

OT-223, 4-LEAD  

© 1997 Fairchild Semiconductor Corporation  

MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0  

7

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