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assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
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. “
T
ypical” parameters which may be provided in
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data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
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does not convey any license under any of its intellectual property rights nor the rights of others.
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products are not designed, intended, or authorized
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BC807-16L, BC807-25L,
BC807-40L
General Purpose
Transistors
PNP Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
−45
Unit
V
Collector − Emitter Voltage
Collector − Base Voltage
V
CEO
V
CBO
V
EBO
3
−50
V
1
Emitter − Base Voltage
−5.0
−500
V
2
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
SOT−23
CASE 318
STYLE 6
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5
B
oard,
P
D
Derate above 25
°
C
225
1.8
mW
mW/
°
C
A
MARKING DIAGRAM
Thermal Resistance,
R
436
°
C/W
q
JA
5xx M
G
T
o
tal Device Dissipation Alumina
P
D
G
Substrate, (Note 1) T
= 25
°
C
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
1
Thermal Resistance,
R
417
°
C/W
q
JA
5xx =
Device Code
xx = A1, B1, or C
M
= Date Code*
Junction and Storage
T
e
mperature
T , T
−
5
5 to +150
°
C
J
stg
G
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4
Board, 1 oz. Cu, 100mm
.
2. Alumina
= 0.4 x 0.3 x 0.024 in 99.5% alumina.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
July, 2017 − Rev. 15
BC807−16LT1/D
BC807−16L, BC807−25L, BC807−40L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
(I =
−10 mA)
C
V
−45
−50
−5.0
−
−
−
−
−
−
V
V
V
(BR)CEO
Collecto
r
−
E
mitter Breakdown Voltage
V
(BR)CES
(V =
0, I
= −10
m
A)
EB
C
Emitte
r
−
B
ase Breakdown Voltage
V
(BR)EBO
(I =
−1.0
m
A)
E
Collector Cutoff Current
I
CBO
(V =
−20 V)
(V =
−20
V
, T
=
1
50
°
C)
CB
−
−
−
−
−100
−5.0
nA
m
A
CB
J
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−100 mA, V
= −1.0 V)
BC807−16, SBC80−16L
BC807−25, SBC807−25L
BC807−40, SBC807−40L
100
160
250
40
−
−
−
−
250
400
600
−
C
CE
(I =
−500 mA, V
= −1.0 V)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
−500 mA, I
= −50 mA)
V
−
−
−0.7
V
V
CE(sat)
C
B
Bas
e
−
E
mitter On Voltage
(I =
−500 mA, V
= −1.0 V)
V
BE(on)
−
−
−1.2
C
CE
SMALL−SIGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
100
−
−
−
−
MHz
pF
T
(I =
−10 mA, V
= −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
−10
V
, f =
1
.0 MHz)
C
10
obo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
BC807−16LT1G
Specific Marking
Package
Shipping
5A1
3000 /
T
a
pe & Reel
SBC807−16LT1G*
BC807−16LT3G
SBC807−16LT3G*
BC807−25LT1G
SBC807−25LT1G*
BC807−25LT3G
SBC807−25LT3G*
BC807−40LT1G
SBC807−40LT1G*
BC807−40LT3G
SBC807−40LT3G*
5A1
5B1
5B1
5C
10,000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SOT−23
(Pb−Free)
5C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
2
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1
500
400
300
200
1
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
150
°
C
25
°
C
−55
°
C
25
°
C
0.1
−55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
3
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1
-1.0
T =
25
°
C
J
-0.8
-0.6
-0.4
I
=
-500 mA
C
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 5. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Temperature Coefficients
Figure 7. Capacitances
4
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−25LT1
500
400
300
200
1
150
°
C
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
25
°
C
25
°
C
−55
°
C
0.1
−55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
5
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−25LT1
-1.0
T =
25
°
C
J
-0.8
-0.6
-0.4
I
=
-500 mA
C
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 13. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 14. Temperature Coefficients
Figure 15. Capacitances
6
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−40LT1
1000
900
800
700
600
500
400
300
1
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
150
°
C
25
°
C
−55
°
C
0.1
25
°
C
−55
°
C
200
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
7
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−40LT1
-1.0
T =
25
°
C
J
-0.8
-0.6
-0.4
I
=
-500 mA
C
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 21. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 22. Temperature Coefficients
Figure 23. Capacitances
8
BC807−16L, BC807−25L, BC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1, BC807−25LT1, BC807−40LT1
1
1 mS
1 S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 24. Safe Operating Area
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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