onsemi-SBC807-25WT1G
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DATA SHEET
General Purpose
Transistors
COLLECTOR
3
PNP Silicon
1
BASE
BC807-25W, BC807-40W
2
EMITTER
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
3
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
SC
−
70
CASE 419
STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
−
45
Unit
V
Collector
−
Emitter Voltage
Collector
−
Base Voltage
V
CEO
V
CBO
V
EBO
MARKING DIAGRAM
−
50
V
Emitter
−
Base Voltage
−
5.0
−
500
V
5x M
G
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
G
1
Symbol
Max
Unit
5x =
Device Code
x = B or C
T
o
tal Device Dissipation FR
−
5 Board,
P
D
(Note 1) T
= 25
°
C
460
272
mW
A
M
= Date Code*
G
= Pb
−
Free Package
Thermal Resistance,
Junction
−
to
−
Ambient
R
°
C/W
q
JA
(Note: Microdot may be in either location)
Junction and Storage
T
e
mperature
T , T
−
55 to +150
°
C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
2
1. FR
−
4 Board, 1 oz. Cu, 100 mm
.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
March, 2022
−
Rev. 5
BC807
−
25W/D
BC807
−
25W, BC807
−
40W
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
(I =
−
10 mA)
C
V
−
45
−
50
−
5.0
−
−
−
−
−
−
V
V
V
(BR)CEO
Collecto
r
−
Emitter Breakdown Voltage
V
(BR)CES
(BR)EBO
(V =
0, I
=
−
10
m
A)
EB
C
Emitte
r
−
Base Breakdown Voltage
V
(I =
−
1.0
m
A)
E
Collector Cutoff Current
I
CBO
(V =
−
20 V)
(V =
−
20
V
, T
=
1
50
°
C)
CB
−
−
−
−
−
100
−
5.0
nA
m
A
CB
J
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−
100 mA, V
=
−
1.0 V)
BC807
−
25, SBC807
−
25
BC807
−
40, SBC807
−
40
160
250
40
−
−
−
400
600
−
C
CE
(I =
−
500 mA, V
=
−
1.0 V)
C
CE
Collecto
r
−
Emitter Saturation Voltage
(I =
−
500 mA, I
=
−
50 mA)
V
−
−
−
0.7
V
V
CE(sat)
C
B
Bas
e
−
Emitter On Voltage
(I =
−
500 mA, V
=
−
1.0 V)
V
BE(on)
−
−
−
1.2
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I =
−
10 mA, V
=
−
5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
−
10
V
, f =
1
.0 MHz)
C
−
10
obo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
BC807
−
25WT1G
Specific Marking
Package
Shipping
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SC
−
70
(Pb
−
Free)
SBC807
−
25WT1G*
BC807
−
25WT3G
BC807
−
40WT1G
SBC807
−
40WT1G*
BC807
−
40WT3G
5B
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SC
−
70
(Pb
−
Free)
5C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable.
2
BC807
−
25W, BC807
−
40W
TYPICAL CHARACTERISTICS
−
BC807
−
25W, SBC807
−
25W
500
400
300
200
1
150
°
C
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
25
°
C
25
°
C
−
55
°
C
0.1
−
55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−
55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−
55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (A)
C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
3
BC807
−
25W, BC807
−
40W
TYPICAL CHARACTERISTICS
−
BC807
−
25W, SBC807
−
25W
-1.0
T =
25
°
C
J
-0.8
I
=
-500 mA
C
-0.6
-0.4
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 6. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 7. Temperature Coefficients
Figure 8. Capacitances
4
BC807
−
25W, BC807
−
40W
TYPICAL CHARACTERISTICS
−
BC807
−
40W, SBC807
−
40W
1000
900
800
700
600
500
400
300
1
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
150
°
C
25
°
C
−
55
°
C
0.1
25
°
C
−
55
°
C
200
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−
55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−
55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (A)
C
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
5
BC807
−
25W, BC807
−
40W
TYPICAL CHARACTERISTICS
−
BC807
−
40W, SBC807
−
40W
-1.0
T =
25
°
C
J
-0.8
I
=
-500 mA
C
-0.6
-0.4
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 14. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. Temperature Coefficients
Figure 16. Capacitances
6
BC807
−
25W, BC807
−
40W
TYPICAL CHARACTERISTICS
−
BC807
−
25W, SBC807
−
25W, BC807
−
40W, SBC807
−
40W
1
1 mS
1 S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
1000
D = 0.5
0.2
100
10
1
0.1
0.05
0.02
0.01
Single Pulse
0.00001 0.0001
0.000001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 18. Thermal Response
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1.
ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1.
CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1.
BASE
STYLE 8:
PIN 1.
GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1.
EMITTER
PIN 1.
ANODE
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC
−
70 (SOT
−
323)
PAGE 1 OF 1
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onsemi
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onsemi
reserves
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onsemi
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©
Semiconductor Components Industries, LLC, 2019
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,
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” or its affiliates
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