onsemi-SBC817-16LT1
| Part # | onsemi-SBC817-16LT1 |
Download  | onsemi-SBC817-16LT1 |
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
COLLECTOR
3
Features
•
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC
−
Q101 Qualified and P
P
A
P Capable
1
BASE
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
2
Compliant
EMITTER
MAXIMUM RATINGS
3
Rating
Symbol
Value
45
Unit
V
1
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
V
CEO
V
CBO
V
EBO
2
50
V
SOT
−
23
CASE 318
STYLE 6
5.0
V
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
I
500
mAdc
C
Symbol
Max
Unit
MARKING DIAGRAM
T
o
tal Device Dissipation FR
−
5 Board,
P
D
225
1.8
mW
mW/
°
C
A
Derate above 25
°
C
6x M
G
Thermal Resistance,
R
556
°
C/W
q
JA
G
Junction
−
to
−
Ambient
1
T
o
tal Device Dissipation
P
D
6x =
Device Code
x = A, B, or C
T =
25
°
C
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
M
= Date Code*
Thermal Resistance,
R
417
°
C/W
G
= Pb
−
Free Package
q
JA
Junction
−
to
−
Ambient
(Note: Microdot may be in either location)
Junction and Storage
T
e
mperature
T , T
−
65 to +150
°
C
J
stg
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
2. Alumina
= 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
September, 2018
−
Rev. 16
BC817
−
16LT1/D
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
V
45
50
−
−
−
−
−
−
V
V
V
(BR)CEO
(I =
10 mA)
C
Collecto
r
−
Emitter Breakdown Voltage
V
(BR)CES
(V =
0, I
= 10
m
A)
EB
C
Emitte
r
−
Base Breakdown Voltage
V
5.0
(BR)EBO
(I =
1.0
m
A)
E
Collector Cutoff Current
I
CBO
(V =
20 V)
−
−
−
−
100
5.0
nA
m
A
CB
(V =
20
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
100 mA, V
= 1.0 V)
BC817
−
16, SBC817
−
16
BC817
−
25, SBC817
−
25
BC817
−
40, SBC817
−
40
100
160
250
40
−
−
−
−
250
400
600
−
C
CE
(I =
500 mA, V
= 1.0 V)
C
CE
Collecto
r
−
Emitter Saturation Voltage
(I =
500 mA, I
= 50 mA)
V
−
−
0.7
V
V
CE(sat)
C
B
Bas
e
−
Emitter On Voltage
(I =
500 mA, V
= 1.0 V)
V
BE(on)
−
−
1.2
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
10
V
, f =
1
.0 MHz)
C
−
10
obo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
BC817
−
16LT1G
Specific Marking
Package
Shipping
3000 /
T
a
pe & Reel
NSVBC817
−
16LT1G
BC817
−
16LT3G
SBC817
−
16LT3G
BC817
−
25LT1G
SBC817
−
25LT1G
BC817
−
25LT3G
SBC817
−
25LT3G
BC817
−
40LT1G
SBC817
−
40LT1G
BC817
−
40LT3G
SBC817
−
40LT3G
SOT
−
23
6A
(Pb
−
Free)
10,000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SOT
−
23
(Pb
−
Free)
6B
6C
SOT
−
23
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
TYPICAL CHARACTERISTICS
−
BC817
−
16L, SBC817
−
16L
300
1
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
25
°
C
200
150
°
C
25
°
C
−
55
°
C
0.1
−
55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−
55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−
55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
3
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
TYPICAL CHARACTERISTICS
−
BC817
−
16L, SBC817
−
16L
1.0
+1
0
T =
25
°
C
J
0.8
0.6
0.4
q
for V
CE(sat)
VC
-1
-2
I
C
= 10 mA
100 mA
300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I ,
BASE CURRENT (mA)
10
100
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
B
Figure 5. Saturation Region
Figure 6. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitances
4
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
TYPICAL CHARACTERISTICS
−
BC817
−
25L, SBC817
−
25L
500
1
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
400
300
200
150
°
C
25
°
C
25
°
C
0.1
−
55
°
C
−
55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
−
55
°
C
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−
55
°
C
25
°
C
150
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
5
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
TYPICAL CHARACTERISTICS
−
BC817
−
25L, SBC81725L
1.0
+1
0
T =
25
°
C
J
0.8
0.6
0.4
q
for V
CE(sat)
VC
-1
-2
I
C
= 10 mA
100 mA
300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I ,
BASE CURRENT (mA)
10
100
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
B
Figure 13. Saturation Region
Figure 14. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. Capacitances
6
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
TYPICAL CHARACTERISTICS
−
BC817
−
40L, SBC817
−
40L
700
1
I /I
= 10
C
B
150
°
C
V
CE
= 1 V
600
500
400
300
200
150
°
C
25
°
C
0.1
25
°
C
−
55
°
C
−
55
°
C
0.01
100
0
0.001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
−
55
°
C
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
−
55
°
C
25
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
7
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
TYPICAL CHARACTERISTICS
−
BC817
−
40L, SBC817
−
40L
1.0
+1
0
T =
25
°
C
J
0.8
0.6
0.4
q
for V
CE(sat)
VC
-1
-2
I
C
= 10 mA
100 mA
300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I ,
BASE CURRENT (mA)
10
100
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
B
Figure 21. Saturation Region
Figure 22. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 23. Capacitances
8
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
TYPICAL CHARACTERISTICS
−
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L,
SBC817
−
40L
1
1 ms
10 ms
100 ms
1 s
Thermal Limit
0.1
0.01
Single Pulse
T
e
st @ T
= 25
°
C
A
0.001
0.01
0.1
1
10
100
V
CE
(Vdc)
Figure 24. Safe Operating Area
9
BC817
−
16L, SBC817
−
16L, BC817
−
25L, SBC817
−
25L, BC817
−
40L, SBC817
−
40L
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
SIDE VIEW
PIN 1.
BASE
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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◊
BC817
−
16LT1/D
