onsemi-SBC846BLT3

Part #onsemi-SBC846BLT3
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onsemi-SBC846BLT3
BC846ALT1 Series  
BC846, BC847 and BC848 are Preferred Devices  
General Purpose  
T
r
ansistors  
NPN Silicon  
Features  
•
Moisture Sensitivity Level: 1  
•
ESD Rating − Human Body Model: >4000 V  
ESD Rating
− Machine Model: >400 V  
•
Pb−Free Packages are Available  
COLLECTOR  
3
1
BASE  
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC846  
65  
45  
30  
BC847, BC850  
BC848, BC849  
3
Collector−Base Voltage  
Vdc  
Vdc  
BC846  
BC847, BC850  
BC848, BC849  
80  
50  
30  
1
2
Emitter−Base Voltage  
SOT−23  
BC846  
BC847, BC850  
BC848, BC849  
6.0  
6.0  
5.0  
CASE 318  
STYLE 6  
Collector Current − Continuous  
I
C
100  
mAdc  
MARKING DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
xxM
G  
G
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
T
o
tal Device Dissipation FR
−
5
B
oard,  
P
225  
mW  
D
xx  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
T =
 
25
°
C  
A
Derate above 25
°
C  
1.8  
mW/
°
C  
°
C/W  
(Note: Microdot may be in either location)  
Thermal Resistance,  
R
556  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
T
o
tal Device Dissipation  
T =
 
25
°
C  
A
P
D
300  
mW  
Derate above 25
°
C  
2.4  
mW/
°
C  
°
C/W  
Preferred
devices are recommended choices for future use  
and best overall value.  
Thermal Resistance,  
R
417  
q
JA  
Junction and Storage  
T
e
mperature Range  
T , T  
−
5
5 to  
+150  
°
C  
J
stg  
1. FR
−
5
 
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.  
2. Alumina
 
= 0.4
ꢀ
0.3
ꢀ
0.024 in 99.5% alumina.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
May, 2005 − Rev. 7  
BC846ALT1/D  
 

BC846ALT1 Series  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collecto
r
−
E
mitter Breakdown Voltage
 
BC846A,B  
V
65  
45  
30  
−
−
−
−
−
−
V
(BR)CEO  
(I =
 
10 mA)  
BC847A,B,C, BC850B,C  
BC848A,B,C, BC849B,C  
C
Collecto
r
−
E
mitter Breakdown Voltage
 
BC846A,B  
V
80  
50  
30  
−
−
−
−
−
−
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I =
 
10
m
A, V
 
= 0)  
BC847A,B,C BC850B,C  
BC848A,B,C, BC849B,C  
C
EB  
Collecto
r
−
B
ase Breakdown Voltage  
BC846A,B  
V
V
80  
50  
30  
−
−
−
−
−
−
(I =
 
10
m
A)  
C
BC847A,B,C, BC850B,C  
BC848A,B,C, BC849B,C  
Emitte
r
−
B
ase Breakdown Voltage  
BC846A,B  
6.0  
6.0  
5.0  
−
−
−
−
−
−
(I =
 
1.0
m
A)  
E
BC847A,B,C, BC850B,C  
BC848A,B,C, BC849B,C  
Collector Cutoff Current (V
 
= 30 V)  
I
−
−
−
−
15  
5.0  
nA  
m
A  
CB  
CBO  
(V =
 
30
V
, T
 
= 150
°
C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
BC846A, BC847A, BC848A  
BC846B, BC847B, BC848B  
BC847C, BC848C  
h
FE  
−
−
−
90  
150  
270  
−
−
−
−
(I =
 
10
m
A, V
 
= 5.0 V)  
C
CE  
(I =
 
2.0 mA, V
 
= 5.0 V)  
BC846A, BC847A, BC848A  
BC846B, BC847B, BC848B,  
BC849B, BC850B  
110  
200  
180  
290  
220  
450  
C
CE  
BC847C, BC848C, BC849C, BC850C  
420  
520  
800  
Collecto
r
−
E
mitter Saturation Voltage (I
 
= 10 mA, I
 
= 0.5 mA)  
V
−
−
−
−
0.25  
0.6  
V
V
C
B
CE(sat)  
Collecto
r
−
E
mitter Saturation Voltage
(I =
 
100 mA, I
 
= 5.0 mA)  
C
B
Bas
e
−
E
mitter Saturation Voltage (I
 
= 10 mA, I
 
= 0.5 mA)  
V
−
−
0.7  
0.9  
−
−
C
B
BE(sat)  
Bas
e
−
E
mitter Saturation Voltage
(I =
 
100 mA, I
 
= 5.0 mA)  
C
B
Bas
e
−
E
mitter Voltage (I
 
= 2.0 mA, V
 
= 5.0 V)  
V
BE(on)  
580  
−
660  
−
700  
770  
mV  
C
CE  
Bas
e
−
E
mitter Voltage
(I =
 
10 mA, V
 
= 5.0 V)  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
Curren
t
−
G
ain − Bandwidth Product  
f
100  
−
−
−
−
MHz  
T
(I =
 
10 mA, V
 
= 5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance (V
 
= 10
V
, f =
1
.0 MHz)  
C
4.5  
pF  
dB  
CB  
obo  
Noise Figure (I
 
= 0.2 mA,  
NF  
C
V
= 5.0 Vdc, R
 
= 2.0 k
W
,  
BC846A,B, BC847A,B,C, BC848A,B,C  
BC849B,C, BC850B,C  
−
−
−
−
10  
4.0  
CE  
S
f = 1.0 kHz, BW = 200 Hz)  
2

BC846ALT1 Series  
BC847, BC848, BC849, BC850  
2.0  
1.5  
1.0  
V
= 10 V  
T =
 
25
°
C  
A
0.9  
0.8  
0.7  
CE  
T =
 
25
°
C  
A
V
@ I
 
/I =
 
10  
C B  
BE(sat)  
1.0  
0.8  
V
BE(on)  
@ V
 
= 10 V  
CE  
0.6  
0.5  
0.4  
0.3  
0.6  
0.4  
0.3  
0.2  
0.1  
V
@ I
 
/I =
 
10  
C B  
CE(sat)  
0.2  
0
0.1  
0.2  
0.5 1.0  
2.0  
5.0 10  
20  
50 100 200  
0.2 0.3
 
0.5 0.7 1.0
 
2.0 3.0
 
5.0 7.0 10
 
20 30
 
50 70 100  
I ,
 
COLLECTOR CURRENT (mAdc)  
C
I ,
 
COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
1.2  
1.6  
2.0  
2.4  
2.8  
T =
 
25
°
C  
−55
°
C to +125
°
C  
A
I
C
= 200 mA  
I
=
I
=
I
C
= 50 mA  
I =
 
100 mA  
C
C
C
10 mA
 
20 mA  
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I ,
 
BASE CURRENT (mA)  
B
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 3. Collector Saturation Region  
Figure 4. Base−Emitter Temperature Coefficient  
10  
7.0  
5.0  
400  
300  
T =
 
25
°
C  
A
200  
C
ib  
V
= 10 V  
CE  
T =
 
25
°
C  
100  
80  
3.0  
2.0  
A
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6
 
0.8 1.0  
2.0  
4.0 6.0
 
8.0 10  
20  
40  
0.5 0.7
 
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
I ,
 
COLLECTOR CURRENT (mAdc)  
C
Figure 5. Capacitances  
Figure 6. Current−Gain − Bandwidth Product  
3

BC846ALT1 Series  
BC846  
1.0  
T =
 
25
°
C  
A
V
= 5 V  
CE  
T =
 
25
°
C  
0.8  
A
V
@ I
 
/I =
 
10  
C B  
BE(sat)  
2.0  
1.0  
0.5  
0.6  
0.4  
0.2  
0
V
@ V
 
= 5.0 V  
CE  
BE  
0.2  
V
@ I
 
/I =
 
10  
C B  
CE(sat)  
0.1 0.2  
1.0  
10  
100  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50 100
 
200  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 7. DC Current Gain  
Figure 8. “On” Voltage  
2.0  
1.6  
1.2  
0.8  
0.4  
0
−1.0  
−1.4  
−1.8  
−2.2  
−2.6  
−3.0  
T =
 
25
°
C  
A
100 mA  
200 mA  
20 mA  
50 mA  
q
for V  
BE  
VB  
−55
°
C to 125
°
C  
I
=
C
10 mA  
0.02 0.05
 
0.1 0.2  
0.5  
1.0 2.0  
5.0 10  
20  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50  
100 200  
I ,
 
BASE CURRENT (mA)  
B
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 9. Collector Saturation Region  
Figure 10. Base−Emitter Temperature Coefficient  
40  
T =
 
25
°
C  
A
V
= 5 V  
CE  
T =
 
25
°
C  
500  
A
20  
10  
C
ib  
200  
100  
50  
6.0  
4.0  
C
ob  
20  
2.0  
0.1 0.2  
0.5  
1.0 2.0  
5.0  
10 20  
50  
100  
1.0  
5.0 10  
50 100  
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 11. Capacitance  
Figure 12. Current−Gain − Bandwidth Product  
4

BC846ALT1 Series  
ORDERING INFORMATION  
Device  
†
Marking  
Package  
Shipping  
BC846ALT1  
SOT−23  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
BC846ALT1G  
SOT−23  
(Pb−Free)  
1A  
BC846ALT3  
SOT−23  
BC846ALT3G  
SOT−23  
(Pb−Free)  
BC846BLT1  
SOT−23  
BC846BLT1G  
SOT−23  
(Pb−Free)  
1B  
1E  
1F  
BC846BLT3  
SOT−23  
BC846BLT3G  
SOT−23  
(Pb−Free)  
BC847ALT1  
SOT−23  
BC847ALT1G  
SOT−23  
(Pb−Free)  
BC847ALT3  
SOT−23  
BC847ALT3G  
SOT−23  
(Pb−Free)  
BC847BLT1  
SOT−23  
BC847BLT1G  
SOT−23  
(Pb−Free)  
BC847BLT3  
SOT−23  
BC847BLT3G  
SOT−23  
(Pb−Free)  
BC847CLT1  
SOT−23  
BC847CLT1G  
SOT−23  
(Pb−Free)  
1G  
1J  
BC847CLT3  
SOT−23  
BC847CLT3G  
SOT−23  
(Pb−Free)  
BC848ALT1  
SOT−23  
BC848ALT1G  
SOT−23  
(Pb−Free)  
3,000 /
T
a
pe & Reel  
BC848BLT1  
SOT−23  
BC848BLT1G  
SOT−23  
(Pb−Free)  
1K  
BC848BLT3  
SOT−23  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
BC848BLT3G  
SOT−23  
(Pb−Free)  
BC848CLT1  
SOT−23  
BC848CLT1G  
SOT−23  
(Pb−Free)  
1L  
BC848CLT3  
SOT−23  
BC848CLT3G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Specifi-  
cations Brochure, BRD8011/D.  
5
 

BC846ALT1 Series  
Device  
†
Marking  
Package  
Shipping  
BC849BLT1  
SOT−23  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
BC849BLT1G  
SOT−23  
(Pb−Free)  
2B  
BC849BLT3  
SOT−23  
BC849BLT3G  
SOT−23  
(Pb−Free)  
BC849CLT1  
SOT−23  
BC849CLT1G  
SOT−23  
(Pb−Free)  
2C  
BC849CLT3  
SOT−23  
BC849CLT3G  
SOT−23  
(Pb−Free)  
BC850BLT1  
SOT−23  
2F  
BC850BLT1G  
SOT−23  
(Pb−Free)  
3,000 /
T
a
pe & Reel  
BC850CLT1  
SOT−23  
2G  
BC850CLT1G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Specifi-  
cations Brochure, BRD8011/D.  
6

BC846ALT1 Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AL  
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
D
2. CONTROLLING
 
DIMENSION: INCH.  
3. MAXIMUM
 
LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
3
4. 318−01
 
THRU −07 AND −09 OBSOLETE, NEW  
STANDARD 318−08.  
E
H
A
E
1
2
MILLIMETERS  
INCHES  
NOM  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.013  
0.037  
0.085  
2.80  
1.20  
1.78  
0.35  
2.10  
NOM  
1.00  
0.06  
0.44  
0.132  
2.90  
1.30  
1.90  
0.54  
2.40  
MAX  
1.11  
MIN  
MAX  
e
0.0350  
0.0005  
0.0150  
0.0034  
0.1102  
0.0472  
0.0701  
0.0140  
0.0830  
0.0395  
0.0023  
0.0175  
0.0052  
0.1140  
0.0512  
0.0750  
0.0213  
0.0940  
0.0440  
0.0040  
0.0200  
0.0070  
0.1197  
0.0551  
0.0807  
0.0285  
0.1039  
0.100  
0.50  
0.177  
3.04  
1.40  
2.04  
0.69  
2.64  
C
A1  
b
L
H
E
STYLE 6:  
PIN 1.
 
BASE  
2. EMITTER  
3. COLLECTOR  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
7

BC846ALT1 Series  
ON Semiconductor
and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
 
SCILLC reserves the right to make changes without further notice  
to any products herein.
 
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
 
All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
 
SCILLC does not convey any license under its patent rights  
nor the rights of others.
 
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
 
Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
 
SCILLC is an Equal  
Opportunity/Affirmative Action Employer.
 
This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMEN
T
:  
N. American Technical Support
: 800−282−9855
T
o
ll Free  
USA/Canada  
ON Semiconductor Website

Literature Distribution Center for ON Semiconductor  
P
.
O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone
: 480−829−7710 or 800−344−3860
T
o
ll Free USA/Canada  
Fax
: 480−829−7709 or 800−344−3867
T
o
ll Free USA/Canada  
Email
: orderlit@onsemi.com  
Japan
: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku,
T
o
kyo, Japan 153−0051  
Phone
: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BC846ALT1/D