onsemi-SBC847BLT1GPO

Part #onsemi-SBC847BLT1GPO
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onsemi-SBC847BLT1GPO
BC846ALT1G Series  
General Purpose  
Transistors  
NPN Silicon  
Features  
•
Moisture Sensitivity Level: 1  
•
ESD Rating − Human Body Model: >4000 V  
ESD Rating
− Machine Model: >400 V  
•
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
COLLECTOR  
3
1
BASE  
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC846  
BC847, BC850  
BC848, BC849  
65  
45  
30  
1
2
Collector−Base Voltage  
Emitter−Base Voltage  
Vdc  
Vdc  
SOT−23  
BC846  
BC847, BC850  
BC848, BC849  
80  
50  
30  
CASE 318  
STYLE 6  
BC846  
BC847, BC850  
BC848, BC849  
6.0  
6.0  
5.0  
MARKING DIAGRAM  
XX M
G  
Collector Current − Continuous  
I
100  
mAdc  
C
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
XX =
 
Device Code  
THERMAL CHARACTERISTICS  
M
= Date Code*  
Characteristic  
Symbol  
Max  
Unit  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
T
o
tal Device Dissipation FR
−
5
B
oard,  
P
D
225  
mW  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
T =
 
25
°
C  
A
Derate above 25
°
C  
1.8  
mW/
°
C  
°
C/W  
Thermal Resistance,  
R
556  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on

of this data sheet.  
T
o
tal Device Dissipation  
P
D
300  
mW  
T =
 
25
°
C  
Derate above 25
°
C  
A
2.4  
mW/
°
C  
°
C/W  
Thermal Resistance,  
R
417  
q
JA  
Junction and Storage  
T
e
mperature Range  
T , T  
−
5
5 to  
+150  
°
C  
J
stg  
1. FR
−
5
 
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.  
2. Alumina
 
= 0.4
ꢀ
0.3
ꢀ
0.024 in 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
March, 2015 − Rev. 14  
BC846ALT1/D  
 

BC846ALT1G Series  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collecto
r
−
E
mitter Breakdown Voltage  
BC846A, B  
BC847A, B, C, BC850B, C  
BC848A, B, C, BC849B, C  
V
65  
45  
30  
−
−
−
−
−
−
V
(BR)CEO  
(I =
 
10 mA)  
C
Collecto
r
−
E
mitter Breakdown Voltage  
BC846A, B  
BC847A, B, C BC850B, C  
BC848A, B, C, BC849B, C  
V
80  
50  
30  
−
−
−
−
−
−
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I =
 
10
m
A, V
 
= 0)  
C
EB  
Collecto
r
−
B
ase Breakdown Voltage  
(I =
 
10
m
A)  
C
BC846A, B  
BC847A, B, C, BC850B, C  
BC848A, B, C, BC849B, C  
V
V
80  
50  
30  
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage  
(I =
 
1.0
m
A)  
E
BC846A, B  
BC847A, B, C, BC850B, C  
BC848A, B, C, BC849B, C  
6.0  
6.0  
5.0  
−
−
−
−
−
−
Collector Cutoff Current (V
 
= 30 V)  
I
−
−
−
−
15  
5.0  
nA  
m
A  
CB  
CBO  
(V =
 
30
V
, T
 
=
1
50
°
C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
BC846A, BC847A, BC848A  
BC846B, BC847B, BC848B  
BC847C, BC848C  
h
FE  
−
−
−
90  
150  
270  
−
−
−
−
(I =
 
10
m
A, V
 
= 5.0 V)  
C
CE  
(I =
 
2.0 mA, V
 
= 5.0 V)  
BC846A, BC847A, BC848A  
BC846B, BC847B, BC848B,  
BC849B, BC850B  
110  
200  
180  
290  
220  
450  
C
CE  
BC847C, BC848C, BC849C, BC850C  
420  
520  
800  
Collecto
r
−
E
mitter Saturation Voltage (I
 
= 10 mA, I
 
= 0.5 mA)  
V
−
−
−
−
0.25  
0.6  
V
V
C
B
CE(sat)  
Collecto
r
−
E
mitter Saturation Voltage
(I =
 
100 mA, I
 
= 5.0 mA)  
C
B
Bas
e
−
E
mitter Saturation Voltage (I
 
= 10 mA, I
 
= 0.5 mA)  
V
−
−
0.7  
0.9  
−
−
C
B
BE(sat)  
Bas
e
−
E
mitter Saturation Voltage
(I =
 
100 mA, I
 
= 5.0 mA)  
C
B
Bas
e
−
E
mitter Voltage (I
 
= 2.0 mA, V
 
= 5.0 V)  
V
BE(on)  
580  
−
660  
−
700  
770  
mV  
C
CE  
Bas
e
−
E
mitter Voltage
(I =
 
10 mA, V
 
= 5.0 V)  
C
CE  
SMALL
−
S
IGNAL CHARACTERISTICS  
Curren
t
−
G
ain − Bandwidth Product  
f
100  
−
−
−
−
MHz  
T
(I =
 
10 mA, V
 
= 5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance (V
 
= 10
V
, f =
1
.0 MHz)  
C
4.5  
pF  
dB  
CB  
obo  
Noise Figure (I
 
= 0.2 mA,  
NF  
C
V
= 5.0 Vdc, R
 
= 2.0 k
W
,  
BC846A,B, BC847A,B,C, BC848A,B,C  
BC849B,C, BC850B,C  
−
−
−
−
10  
4.0  
CE  
S
f = 1.0 kHz, BW = 200 Hz)  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2

BC846ALT1G Series  
BC846A, BC847A, BC848A, SBC846A  
300  
200  
300  
V
CE  
= 5 V  
V
CE  
= 1 V  
150
°
C  
150
°
C  
200  
25
°
C  
25
°
C  
−55
°
C  
−55
°
C  
100  
0
100  
0
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 1. DC Current Gain vs. Collector  
Current  
Figure 2. DC Current Gain vs. Collector  
Current  
0.18  
I /I
 
= 20  
C
B
150
°
C  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
25
°
C  
−55
°
C  
0.02  
0
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 3. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.0  
1.2  
−55
°
C  
25
°
C  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
V
CE  
= 5 V  
I /I
 
= 20  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
C
B
−55
°
C  
25
°
C  
150
°
C  
150
°
C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 4. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 5. Base Emitter Voltage vs. Collector  
Current  
3

BC846ALT1G Series  
BC846A, BC847A, BC848A, SBC846A  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
T =
 
25
°
C  
-55
°
C to +125
°
C  
A
1.2  
1.6  
2.0  
2.4  
2.8  
I
C
= 200 mA  
I
=
I
=
10 mA
 
20 mA  
I
C
= 50 mA  
I =
 
100 mA  
C
C
C
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I ,
 
BASE CURRENT (mA)  
B
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 6. Collector Saturation Region  
Figure 7. Base−Emitter Temperature Coefficient  
10  
7.0  
5.0  
400  
300  
T =
 
25
°
C  
A
200  
C
ib  
V
= 10 V  
CE  
100  
80  
T =
 
25
°
C  
A
3.0  
2.0  
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6
 
0.8 1.0  
2.0  
4.0 6.0
 
8.0 10  
20  
40  
0.5 0.7
 
1.0  
2.0 3.0  
5.0 7.0
 
10  
20 30  
50  
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
I ,
 
COLLECTOR CURRENT (mAdc)  
C
Figure 8. Capacitances  
Figure 9. Current−Gain − Bandwidth Product  
4

BC846ALT1G Series  
BC846B, SBC846B  
600  
500  
400  
600  
V
CE  
= 1 V  
V
CE  
= 5 V  
150
°
C  
150
°
C  
500  
400  
300  
200  
25
°
C  
25
°
C  
300  
200  
−55
°
C  
−55
°
C  
100  
0
100  
0
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 10. DC Current Gain vs. Collector  
Current  
Figure 11. DC Current Gain vs. Collector  
Current  
0.30  
I /I
 
= 20  
C
B
150
°
C  
0.25  
0.20  
0.15  
25
°
C  
0.10  
0.05  
0
−55
°
C  
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 12. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.1  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
V
CE  
= 5 V  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I /I
 
= 20  
C
B
−55
°
C  
25
°
C  
−55
°
C  
25
°
C  
150
°
C  
150
°
C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 13. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 14. Base Emitter Voltage vs. Collector  
Current  
5

BC846ALT1G Series  
BC846B, SBC846B  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
T =
 
25
°
C  
A
1.4  
100 mA  
200 mA  
20 mA  
50 mA  
1.8  
q
for V  
BE  
VB  
-55
°
C to 125
°
C  
I =  
10 mA  
C
2.2  
2.6  
3.0  
0.02 0.05
 
0.1 0.2  
0.5  
1.0 2.0  
5.0 10  
20  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50  
100 200  
I ,
 
BASE CURRENT (mA)  
B
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 15. Collector Saturation Region  
Figure 16. Base−Emitter Temperature Coefficient  
40  
T =
 
25
°
C  
A
V
= 5 V  
CE  
500  
T =
 
25
°
C  
A
20  
10  
C
ib  
200  
100  
50  
6.0  
4.0  
C
ob  
20  
2.0  
0.1 0.2  
0.5  
1.0 2.0  
5.0  
10 20  
50  
100  
1.0  
5.0 10  
50 100  
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 17. Capacitance  
Figure 18. Current−Gain − Bandwidth Product  
6

BC846ALT1G Series  
BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B  
600  
500  
400  
300  
200  
600  
V
CE  
= 1 V  
V
CE  
= 5 V  
150
°
C  
25
°
C  
150
°
C  
500  
400  
300  
25
°
C  
200 −55
°
C  
−55
°
C  
100  
0
100  
0
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 19. DC Current Gain vs. Collector  
Current  
Figure 20. DC Current Gain vs. Collector  
Current  
0.30  
I /I
 
= 20  
C
B
0.25  
0.20  
0.15  
0.10  
150
°
C  
25
°
C  
−55
°
C  
0.05  
0
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 21. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.1  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
V
CE  
= 5 V  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I /I
 
= 20  
C
B
−55
°
C  
25
°
C  
−55
°
C  
25
°
C  
150
°
C  
150
°
C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 22. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 23. Base Emitter Voltage vs. Collector  
Current  
7

BC846ALT1G Series  
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
T =
 
25
°
C  
-55
°
C to +125
°
C  
A
1.2  
1.6  
2.0  
2.4  
2.8  
I
C
= 200 mA  
I
=
I
=
10 mA
 
20 mA  
I
C
= 50 mA  
I =
 
100 mA  
C
C
C
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I ,
 
BASE CURRENT (mA)  
B
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 24. Collector Saturation Region  
Figure 25. Base−Emitter Temperature  
Coefficient  
10  
7.0  
5.0  
400  
300  
T =
 
25
°
C  
A
200  
C
ib  
V
= 10 V  
CE  
100  
80  
T =
 
25
°
C  
A
3.0  
2.0  
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6
 
0.8 1.0  
2.0  
4.0 6.0
 
8.0 10  
20  
40  
0.5 0.7
 
1.0  
2.0 3.0  
5.0 7.0
 
10  
20 30  
50  
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
I ,
 
COLLECTOR CURRENT (mAdc)  
C
Figure 26. Capacitances  
Figure 27. Current−Gain − Bandwidth Product  
8

BC846ALT1G Series  
BC847C, BC848C, BC849C, BC850C, SBC847C  
1000  
900  
1000  
V
CE  
= 1 V  
900  
800  
700  
600  
500  
400  
300  
200  
V
CE  
= 5 V  
150
°
C  
150
°
C  
800  
700  
600  
500  
400  
300  
200  
25
°
C  
25
°
C  
−55
°
C  
−55
°
C  
100  
0
100  
0
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 28. DC Current Gain vs. Collector  
Current  
Figure 29. DC Current Gain vs. Collector  
Current  
0.30  
I /I
 
= 20  
C
B
0.25  
0.20  
0.15  
0.10  
150
°
C  
25
°
C  
−55
°
C  
0.05  
0
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 30. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.1  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
V
CE  
= 5 V  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I /I
 
= 20  
C
B
−55
°
C  
25
°
C  
−55
°
C  
25
°
C  
150
°
C  
150
°
C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
0.0001  
0.001  
0.01  
0.1  
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 31. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 32. Base Emitter Voltage vs. Collector  
Current  
9

BC846ALT1G Series  
BC847C, BC848C, BC849C, BC850C, SBC847C  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
T =
 
25
°
C  
-55
°
C to +125
°
C  
A
1.2  
1.6  
2.0  
2.4  
2.8  
I
C
= 200 mA  
I
=
I
=
10 mA
 
20 mA  
I
C
= 50 mA  
I =
 
100 mA  
C
C
C
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I ,
 
BASE CURRENT (mA)  
B
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 33. Collector Saturation Region  
Figure 34. Base−Emitter Temperature  
Coefficient  
10  
7.0  
5.0  
400  
300  
T =
 
25
°
C  
A
200  
C
ib  
V
= 10 V  
CE  
100  
80  
T =
 
25
°
C  
A
3.0  
2.0  
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6
 
0.8 1.0  
2.0  
4.0 6.0
 
8.0 10  
20  
40  
0.5 0.7
 
1.0  
2.0 3.0  
5.0 7.0
 
10  
20 30  
50  
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
I ,
 
COLLECTOR CURRENT (mAdc)  
C
Figure 35. Capacitances  
Figure 36. Current−Gain − Bandwidth Product  
10  

BC846ALT1G Series  
1
1
100 mS
 
10 mS  
1 S  
100 mS
 
10 mS  
1 S  
1 mS  
1 mS  
0.1  
0.1  
Thermal Limit  
Thermal Limit  
0.01  
0.01  
0.001  
0.001  
1
10  
, COLLECTOR EMITTER VOLTAGE (V)  
100  
0.1  
1
10  
100  
V
CE  
V
CE  
, COLLECTOR EMITTER VOLTAGE (V)  
Figure 37. Safe Operating Area for  
BC846A, BC846B  
Figure 38. Safe Operating Area for  
BC847A, BC847B, BC847C, BC850B, BC850C  
1
100 mS
 
10 mS  
1 mS  
0.1  
1 S  
Thermal Limit  
0.01  
0.001  
0.1  
1
10  
100  
V
CE  
, COLLECTOR EMITTER VOLTAGE (V)  
Figure 39. Safe Operating Area for  
BC848A, BC848B, BC848C, BC849B, BC849C  
11  

BC846ALT1G Series  
ORDERING INFORMATION  
Device  
†
Marking  
Package  
Shipping  
BC846ALT1G  
SOT−23  
(Pb−Free)  
1A  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
SBC846ALT1G*  
BC846ALT3G  
SOT−23  
(Pb−Free)  
1A  
1B  
BC846BLT1G  
SBC846BLT1G*  
BC846BLT3G  
SBC846BLT3G*  
BC847ALT1G  
SOT−23  
(Pb−Free)  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
SOT−23  
(Pb−Free)  
1B  
1E  
SOT−23  
(Pb−Free)  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
BC847ALT3G  
SOT−23  
(Pb−Free)  
BC847BLT1G  
SOT−23  
(Pb−Free)  
1F  
1F  
1G  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
SBC847BLT1G*  
BC847BLT3G  
SOT−23  
(Pb−Free)  
NSVBC847BLT3G*  
BC847CLT1G  
SBC847CLT1G*  
BC847CLT3G  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
1G  
1J  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
BC848ALT1G  
SOT−23  
(Pb−Free)  
BC848BLT1G  
SBC848BLT1G*  
BC848BLT3G  
SOT−23  
(Pb−Free)  
1K  
1K  
3,000 /
T
a
pe & Reel  
SOT−23  
(Pb−Free)  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
BC848CLT1G  
BC848CLT3G  
BC849BLT1G  
BC849BLT3G  
BC849CLT1G  
BC849CLT3G  
SOT−23  
(Pb−Free)  
1L  
2B  
2C  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
BC850BLT1G  
SOT−23  
(Pb−Free)  
2F  
NSVBC850BLT1G*  
BC850CLT1G  
3,000 /
T
a
pe & Reel  
SOT−23  
(Pb−Free)  
2G  
NSVBC850CLT1G*  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Spe-  
cifications Brochure, BRD8011/D.  
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified  
and PPAP Capable.  
12  

BC846ALT1G Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AP  
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING
 
DIMENSION: INCH.  
D
3. MAXIMUM
 
LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS
 
D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0
°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0
°  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10
°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10
°  
c
1
2
b
0.25  
e
q
H
E
q
A
L
STYLE 6:  
A1  
PIN 1.
 
BASE  
2. EMITTER  
3. COLLECTOR  
L1  
VIEW C  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
ON Semiconductor
and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
 
SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at

. SCILLC  
reserves the right to make changes without further notice to any products herein.
 
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages.
 
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time.
 
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
 
SCILLC  
does not convey any license under its patent rights nor the rights of others.
 
SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur.
 
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part.
 
SCILLC is an Equal Opportunity/Affirmative Action Employer.
 
This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
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T
:  
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T
o
ll Free  
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o
ll Free USA/Canada  
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o
ll Free USA/Canada  
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For additional information, please contact your local  
Sales Representative  
BC846ALT1/D