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BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
SOT−363
CASE 419B
STYLE 1
Features
(3)
(2)
(1)
Q
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Q
1
2
(4)
(5)
(6)
MAXIMUM RATINGS − NPN
MARKING DIAGRAM
Rating
Symbol
Value
Unit
6
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
V
V
CEO
CBO
EBO
65
45
30
XX M
G
G
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
V
V
1
80
50
30
X
X
=
D
evice Code
M =
Date Code
G
= Pb−Free Package
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
MAXIMUM RATINGS − PNP
Rating
V
6.0
100
200
V
(Note: Microdot may be in either location)
I
C
mAdc
mAdc
I
CM
ORDERING INFORMATION
†
Device
Mark Package
Shipping
BB SOT−363
3,000 /
(Pb−Free)
T
a
pe
& Reel
3,000 /
(Pb−Free)
T
a
pe
& Reel
Symbol
Value
Unit
BC846BPDW1T1G,
SBC846BPDW1T1G
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
V
V
CEO
CBO
EBO
−65
−45
−30
SBC846BPDW1T2G BB SOT−363
BC847BPDW1T1G
SBC847BPDW1T1G
SBC847BPDW1T3G
BF SOT−363
3,000 /
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
V
V
(Pb−Free)
T
a
pe
& Reel
−80
−50
−30
SOT−363
3,000 /
BF
BF
(Pb−Free)
T
a
pe
& Reel
Emitter−Base Voltage
V
−6.0
−100
−200
V
SOT−363 10,000
/
(Pb−Free)
T
a
pe
& Reel
BF SOT−363
3,000 /
(Pb−Free)
T
a
pe
& Reel
SOT−363 3,000
/
(Pb−Free)
T
a
pe
& Reel
Collector Current − Continuous
Collector Current − Peak
I
C
mAdc
mAdc
BC847BPDW1T2G
BC848CPDW1T1G
I
CM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
BL
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
April, 2016 − Rev. 12
BC846BPDW1T1/D
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation Per Device
P
D
380
250
3.0
mW
mW/
°
C
mW/
°
C
T =
25
°
C
A
Derate above 25
°
C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
1. FR−5
= 1.0 x 0.75 x 0.062 in.
R
328
°
C/W
°
C
q
JA
T , T
J
−
5
5 to +150
stg
ELECTRICAL CHARACTERISTICS (NPN)
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
V
(BR)CEO
(I =
10 mA)
C
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
65
45
30
−
−
−
−
−
−
Collecto
r
−
E
mitter Breakdown Voltage
V
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
10
m
A, V
= 0)
C
EB
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
80
50
30
−
−
−
−
−
−
Collecto
r
−
B
ase Breakdown Voltage
V
V
(I =
10
m
A)
C
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
80
50
30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
1.0
m
A)
E
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
6.0
6.0
6.0
−
−
−
−
−
−
Collector Cutoff Current
I
CBO
(V =
30 V)
−
−
−
−
15
5.0
nA
m
A
CB
(V =
30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
10
m
A, V
= 5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
C
CE
−
−
150
270
−
−
(I =
2.0 mA, V
= 5.0 V)
BC846B, SBC846B, BC847B, SBC84B7
BC848C
C
CE
200
420
290
520
475
800
Collecto
r
−
E
mitter Saturation Voltage
V
V
CE(sat)
(I =
10 mA, I
= 0.5 mA) All devices except SBC847BPDW1T1G
−
−
−
−
−
−
−
0.25
0.1
0.6
−
C
B
SBC847BPDW1T1G only
(I =
100 mA, I
= 5.0 mA) All devices
C
B
(I =
2 mA, I
= 0.5 mA) SBC847BPDW1T1G only
0.024
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
10 mA, I
= 0.5 mA)
V
V
BE(sat)
−
−
0.7
0.9
−
−
C
B
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
E
mitter Voltage
(I =
2.0 mA, V
= 5.0 V)
V
BE(on)
mV
580
−
660
−
700
770
C
CE
(I =
10 mA, V
= 5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
T
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
100
−
−
−
−
C
CE
Output Capacitance (V
= 10
V
, f =
1
.0 MHz)
C
4.5
pF
dB
CB
obo
Noise Figure
NF
(I =
0.2 mA, V
= 5.0 Vdc, R
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
−
−
10
C
CE
S
2
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
ELECTRICAL CHARACTERISTICS (PNP)
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
V
(BR)CEO
(I =
−10 mA)
C
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
−65
−45
−30
−
−
−
−
−
−
Collecto
r
−
E
mitter Breakdown Voltage
V
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
−10
m
A, V
= 0)
C
EB
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
−80
−50
−30
−
−
−
−
−
−
Collecto
r
−
B
ase Breakdown Voltage
V
V
(I =
−10
m
A)
C
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
−80
−50
−30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
−1.0
m
A)
E
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
−6.0
−6.0
−6.0
−
−
−
−
−
−
Collector Cutoff Current
I
CBO
(V =
−30 V)
−
−
−
−
−15
−4.0
nA
m
A
CB
(V =
−30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−10
m
A, V
= −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
C
CE
−
−
150
270
−
−
(I =
−2.0 mA, V
= −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
C
CE
200
420
290
520
475
800
Collecto
r
−
E
mitter Saturation Voltage
V
V
CE(sat)
(I =
−10 mA, I
= −0.5 mA) All devices except SBC847BPDW1T1G
−
−
−
−
−
−
−
−0.3
−0.1
−0.65
−
C
B
SBC847BPDW1T1G only
(I =
−100 mA, I
= −5.0 mA) All devices
C
B
(I =
−2 mA, I
= −0.5 mA) SBC847BPDW1T1G only
−0.024
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
V
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter On Voltage
(I =
−2.0 mA, V
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I =
−10 mA, V
= −5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
pF
T
(I =
−10 mA, V
= −5.0 Vdc, f = 100 MHz)
100
−
−
−
−
−
C
CE
Output Capacitance
(V =
−10
V
, f =
1
.0 MHz)
CB
C
ob
4.5
10
Noise Figure
NF
dB
(I =
−0.2 mA, V
= −5.0 Vdc, R
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
−
C
CE
S
3
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
500
400
300
200
0.30
I /I
= 20
150
°
C
V
CE
= 5 V
C B
0.25
0.20
0.15
0.10
25
°
C
150
°
C
25
°
C
−55
°
C
100
0
0.05
0
−55
°
C
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
V
CE
= 5 V
I /I
= 20
1.0
0.9
0.8
0.7
0.6
0.5
0.4
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
2.0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
T =
25
°
C
A
1.6
1.2
0.8
0.4
0
100 mA
200 mA
20 mA
50 mA
q
for V
BE
VB
-55
°
C to 125
°
C
I =
C
10 mA
0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Collector Saturation Region
Figure 6. Base−Emitter Temperature Coefficient
4
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
40
T =
25
°
C
A
V
= 5 V
CE
500
T =
25
°
C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Capacitance
Figure 8. Current−Gain − Bandwidth Product
5
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
500
400
300
200
0.30
I /I
= 20
C
B
V
CE
= 5 V
150
°
C
25
°
C
0.25
0.20
0.15
0.10
150
°
C
25
°
C
−55
°
C
−55
°
C
100
0
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
1.1
−55
°
C
V
CE
= 5 V
I /I
= 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
-2.0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-1.6
-1.2
-0.8
-0.4
0
-100 mA
-200 mA
I =
C
-10 mA
-20 mA
-50 mA
q
for V
BE
VB
-55
°
C to 125
°
C
T =
25
°
C
J
-0.02 -0.05
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-0.2 -0.5
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. Collector Saturation Region
Figure 14. Base−Emitter Temperature Coefficient
6
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
40
20
V
CE
= -5.0 V
500
T =
25
°
C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
-0.1 -0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-1.0
-10
-100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
7
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
500
400
300
200
0.30
I /I
= 20
150
°
C
C
B
V
CE
= 5 V
0.25
0.20
0.15
0.10
150
°
C
25
°
C
25
°
C
−55
°
C
−55
°
C
100
0
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
V
CE
= 5 V
−55
°
C
1.0
0.9
I /I
= 20
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
25
°
C
−55
°
C
25
°
C
0.8
0.7
150
°
C
0.6
0.5
0.4
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
2.0
1.0
1.2
1.6
2.0
2.4
2.8
T =
25
°
C
-55
°
C to +125
°
C
A
1.6
1.2
0.8
0.4
0
I =
200 mA
C
I =
I =
I =
50 mA
C
I =
100 mA
C
C
C
10 mA
20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 21. Collector Saturation Region
Figure 22. Base−Emitter Temperature
Coefficient
8
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 23. Capacitances
Figure 24. Current−Gain − Bandwidth Product
9
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
500
400
300
200
0.35
150
°
C
I /I
= 20
150
°
C
C
B
V
CE
= 5 V
0.30
0.25
0.20
0.15
0.10
25
°
C
25
°
C
−55
°
C
−55
°
C
100
0
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
1.1
V
CE
= 5 V
−55
°
C
I /I
= 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-55
°
C to +125
°
C
T =
25
°
C
A
-1.6
-1.2
-0.8
-0.4
0
I =
C
-10 mA
I =
-50 mA
C
I =
-200 mA
C
I =
-100 mA
C
I =
-20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 29. Collector Saturation Region
Figure 30. Base−Emitter Temperature
Coefficient
10
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
10
7.0
5.0
400
C
ib
300
T =
25
°
C
A
200
150
V
CE
= -10 V
T =
25
°
C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30
-40
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 31. Capacitances
Figure 32. Current−Gain − Bandwidth Product
11
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
1000
900
800
700
600
500
400
300
200
0.30
I /I
= 20
C
B
V
CE
= 5 V
0.25
0.20
0.15
0.10
150
°
C
150
°
C
25
°
C
25
°
C
−55
°
C
−55
°
C
0.05
0
100
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 33. DC Current Gain vs. Collector
Current
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 20
C
B
−55
°
C
25
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
Figure 36. Base Emitter Voltage vs. Collector
Current
2.0
1.0
1.2
1.6
2.0
2.4
2.8
T =
25
°
C
-55
°
C to +125
°
C
A
1.6
1.2
0.8
0.4
0
I =
200 mA
C
I =
I =
I =
50 mA
C
I =
100 mA
C
C
C
10 mA
20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 37. Collector Saturation Region
Figure 38. Base−Emitter Temperature
Coefficient
12
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 39. Capacitances
Figure 40. Current−Gain − Bandwidth Product
13
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
1000
900
800
700
600
500
400
300
200
0.30
I /I
= 20
C
B
150
°
C
V
CE
= 5 V
150
°
C
0.25
0.20
0.15
0.10
25
°
C
25
°
C
−55
°
C
−55
°
C
0.05
0
100
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 41. DC Current Gain vs. Collector
Current
Figure 42. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
1.1
−55
°
C
V
CE
= 5 V
I /I
= 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 43. Base Emitter Saturation Voltage vs.
Collector Current
Figure 44. Base Emitter Voltage vs. Collector
Current
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-55
°
C to +125
°
C
T =
25
°
C
A
-1.6
-1.2
-0.8
-0.4
0
I =
C
-10 mA
I =
-50 mA
C
I =
-200 mA
C
I =
-100 mA
C
I =
-20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 45. Collector Saturation Region
Figure 46. Base−Emitter Temperature
Coefficient
14
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
10
7.0
5.0
400
C
ib
300
T =
25
°
C
A
200
150
V
CE
= -10 V
T =
25
°
C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30
-40
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 47. Capacitances
Figure 48. Current−Gain − Bandwidth Product
15
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
Z
(t) = r(t) R
q
JA
q
JA
P
(pk)
R
= 328
°
C/W MAX
q
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.01
0.01
t
2
READ TIME AT t
1
DUTY CYCLE, D = t
/t
T
J(pk)
− T
= P
R
q
(t)
JC
C
(pk)
1 2
SINGLE PULSE
0.001
0
1.0
10
100
1.0ꢁk
10ꢁk
100ꢁk
1.0ꢁM
t, TIME (ms)
Figure 49. Thermal Response
1000
The safe operating area curves indicate I
−V lim-
C
CE
1
m
s
10
m
s
its of the transistor that must be observed for reliable op-
eration. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
100
10
100
m
s
= 150
°
C; T
J(pk)
C
1 ms
3 ms
10 ms
or T
is variable depending upon conditions. Pulse
A
curves are valid for duty cycles to 10% provided T
J(pk)
BC846
100 ms
1 s
≤
150
°
C. T
may be calculated from the data in Figure
J(pk)
49
. At high case or ambient temperatures, thermal limita-
tions will reduce the power that can be handled to values
less than the limitations imposed by the secondary break-
down.
1.0
1.0
10
, COLLECTOR-EMITTER VOLTAGE (V)
100
V
CE
Figure 50. Safe Operating Area − BC846
1000
100
10
1000
1
m
s
1
m
s
10
m
s
100
m
s
1 ms
3 ms
10
m
s
100
m
s
1 ms
3 ms
10 ms
100 ms
1 s
100
10
10 ms
100 ms
1 s
BC847
BC848
1.0
1.0
1.0
10
, COLLECTOR-EMITTER VOLTAGE (V)
100
1.0
10
V ,
COLLECTOR-EMITTER VOLTAGE (V)
CE
100
V
CE
Figure 51. Safe Operating Area − BC847
Figure 52. Safe Operating Area − BC848
16
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
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Printed versions
are uncontrolled
except when stamped
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DOCUMENT NUMBER:
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−
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−
6/SOT
−
363
PAGE 1 OF 2
ON Semiconductor and
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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rights of others.
©
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SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
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DOCUMENT NUMBER:
DESCRIPTION:
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363
PAGE 2 OF 2
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ON Semiconductor and
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