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BC856BDW1T1G,
SBC856BDW1T1GꢀSeries,
BC857BDW1T1G,
SBC857BDW1T1GꢀSeries,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
SOT−363/SC−88
CASE 419B
STYLE 1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
(3)
(2)
(1)
Q
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Q
1
2
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(4)
(5)
(6)
Compliant*
MAXIMUM RATINGS
MARKING DIAGRAM
Rating
Symbol
Value
Unit
6
Collecto
r
−
E
mitter Voltage
BC856, SBC856
BC857, SBC857
BC858
V
V
V
V
CEO
CBO
EBO
−65
−45
−30
3x M
G
G
1
Collecto
r
−
B
ase Voltage
BC856, SBC856
BC857, SBC857
BC858
V
−80
−50
−30
3x =
Specific Device Code
x = B,
F
,
G
, or L
Emitte
r
−
B
ase Voltage
−5.0
−100
−200
V
(See Ordering Information)
= Date
Code
= Pb−Free
Package
M
G
Collector Current −Continuous
Collector Current − Peak
I
C
I
C
mAdc
mAdc
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Symbol
Max
Unit
T
o
tal Device Dissipation
Per Device
P
D
380
250
mW
mW
T =
25
°
C
A
Derate Above 25
°
C
3.0
mW/
°
C
°
C/W
Thermal Resistance,
Junction−to−Ambient
R
q
JA
328
Junction and Storage
T
e
mperature
Range
T , T
−
5
5 to +150
°
C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2016 − Rev. 10
BC856BDW1T1/D
BC856BDW1T1G, SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
V
(BR)CEO
(I =
−10 mA)
C
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
−65
−45
−30
−
−
−
−
−
−
Collecto
r
−
E
mitter Breakdown Voltage
V
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
−10
m
A, V
= 0)
C
EB
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
−80
−50
−30
−
−
−
−
−
−
Collecto
r
−
B
ase Breakdown Voltage
V
V
(I =
−10
m
A)
C
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
−80
−50
−30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
−1.0
m
A)
E
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
−5.0
−5.0
−5.0
−
−
−
−
−
−
Collector Cutoff Current
I
CBO
(V =
−30 V)
−
−
−
−
−15
−4.0
nA
m
A
CB
(V =
−30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−10
m
A, V
= −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
C
CE
−
−
150
270
−
−
(I =
−2.0 mA, V
= −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
C
CE
220
420
290
520
475
800
Collecto
r
−
E
mitter Saturation Voltage
V
V
V
V
CE(sat)
(I =
−10 mA, I
= −0.5 mA)
−
−
−
−
−0.3
−0.65
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter On Voltage
(I =
−2.0 mA, V
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I =
−10 mA, V
= −5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
pF
T
(I =
−10 mA, V
= −5.0 Vdc, f = 100 MHz)
100
−
−
−
−
−
C
CE
Output Capacitance
(V =
−10
V
, f =
1
.0 MHz)
CB
C
ob
4.5
10
Noise Figure
NF
dB
(I =
−0.2 mA, V
= −5.0 Vdc, R
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
−
C
CE
S
2
BC856BDW1T1G, SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC856/SBC856
-1.0
T =
25
°
C
J
V
CE
= -5.0 V
-0.8
-0.6
T =
25
°
C
A
V
@ I
/I =
10
C B
BE(sat)
2.0
1.0
0.5
V
BE
@ V
= -5.0 V
CE
-0.4
-0.2
0
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.1 -0.2
-1.0 -2.0
-10 -20
-100 -200
-50
-0.2 -0.5
-1.0 -2.0
-5.0 -10
-20
-50 -100
-200
-5.0
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. “On” Voltage
-2.0
-1.6
-1.2
-0.8
-0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-100 mA
-200 mA
I =
C
-10 mA
-20 mA
-50 mA
q
for V
BE
VB
-55
°
C to 125
°
C
T =
25
°
C
J
-0.02 -0.05
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-0.2 -0.5
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
40
20
V
CE
= -5.0 V
500
T =
25
°
C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
-0.1 -0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-1.0
-10
-100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Capacitance
Figure 6. Current−Gain − Bandwidth Product
3
BC856BDW1T1G, SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC857/SBC857/BC858
2.0
1.5
-1.0
T =
25
°
C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
V
@ I
/I =
10
C B
BE(sat)
T =
25
°
C
A
1.0
0.7
0.5
V
BE(on)
@ V
= -10 V
CE
0.3
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 7. Normalized DC Current Gain
Figure 8. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55
°
C to +125
°
C
T =
25
°
C
A
I =
C
-10 mA
I =
-50 mA
C
I =
-200 mA
C
I =
-100 mA
C
I =
-20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
C
ib
T =
25
°
C
A
200
150
V
CE
= -10 V
T =
25
°
C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30
-40
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 11. Capacitances
Figure 12. Current−Gain − Bandwidth Product
4
BC856BDW1T1G, SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
Z
R
(t) = r(t) R
q
JA
q
JA
P
(pk)
= 328
°
C/W MAX
q
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.01
0.01
READ TIME AT t
1
t
2
T
− T
= P
R (t)
q
JC
J(pk)
C
(pk)
DUTY CYCLE, D = t
/t
1
2
SINGLE PULSE
0.001
0
1.0
10
100
1.0ꢁk
10ꢁk
100ꢁk
1.0ꢁM
t, TIME (ms)
Figure 13. Thermal Response
-200
The safe operating area curves indicate I
−V limits
C
CE
1 s
3 ms
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
-100
-50
T =
25
°
C
T =
25
°
C
A
J
= 150
°
C; T
J(pk)
C
or T
is variable depending upon conditions. Pulse curves
A
are valid for duty cycles to 10% provided T
≤
150
°
C.
BC558
BC557
BC556
J(pk)
T
J(pk)
-10
case or ambient temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
5
BC856BDW1T1G, SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
ORDERING INFORMATION
†
Device
Device Marking
Package
Shipping
BC856BDW1T1G
3B
SOT−363
(Pb−Free)
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
SBC856BDW1T1G
BC856BDW1T3G
SBC856BDW1T3G
BC857BDW1T1G
SBC857BDW1T1G
BC857CDW1T1G
SBC857CDW1T1G
BC858CDW1T1G
3B
3B
3B
3F
3F
3G
3G
3L
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 2 OF 2
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