onsemi-SBC856BWT1G
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BC856B, BC857B, BC858A
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
COLLECTOR
3
Features
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
2
EMITTER
Compliant
3
SC−70/SOT−323
CASE 419
STYLE 3
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
1
2
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
V
BC856
BC857
BC858
−65
−45
−30
MARKING DIAGRAM
Collector-Base Voltage
V
XX M
G
BC856
BC857
BC858
−80
−50
−30
G
1
Emitter−Base Voltage
−5.0
V
XX =
Specific Device Code
Collector Current − Continuous
I
C
−100
mAdc
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Date Code orientation may vary depending up-
on manufacturing location.
T
o
tal Device Dissipation FR
−
5
B
oard,
P
D
150
mW
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Thermal Resistance,
Junction−to−Ambient
R
883
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature
T , T
J
−
5
5 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2015 − Rev. 4
BC856BWT1/D
BC856B, BC857B, BC858A
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
(I =
−10 mA)
C
BC856
BC857
BC858
V
−65
−45
−30
−
−
−
−
−
−
V
(BR)CEO
Collecto
r
−
E
mitter Breakdown Voltage
BC856
BC857
BC858
V
−80
−50
−30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
−10
m
A, V
= 0)
C
EB
Collecto
r
−
B
ase Breakdown Voltage
(I =
−10
m
A)
C
BC856
BC857
BC858
V
V
−80
−50
−30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
−1.0
m
A)
E
BC856
BC857
BC858
−5.0
−5.0
−5.0
−
−
−
−
−
−
Collector Cutoff Current (V
= −30 V)
I
−
−
−
−
−15
−4.0
nA
m
A
CB
CBO
Collector Cutoff Current
(V =
−30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
(I =
−10
m
A, V
= −5.0 V)
C
BC856A, BC585A
BC856B, BC857B, BC858B
BC857C
h
FE
−
−
−
90
150
270
−
−
−
−
CE
(I =
−2.0 mA, V
= −5.0 V)
BC856A, BC858A
BC856B, BC857B, BC858B
BC857C
125
220
420
180
290
520
250
475
800
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
V
V
V
CE(sat)
−
−
−
−
−0.3
−0.65
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter On Voltage
(I =
−2.0 mA, V
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I =
−10 mA, V
= −5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
100
−
−
−
−
−
MHz
pF
T
(I =
−10 mA, V
= −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
−10
V
, f =
1
.0 MHz)
CB
C
4.5
10
ob
Noise Figure
NF
−
dB
(I =
−0.2 mA, V
= −5.0 Vdc, R
= 2.0 k
W
,
C
CE
S
f = 1.0 kHz, BW = 200 Hz)
2
BC856B, BC857B, BC858A
BC857/BC858
2.0
1.5
-1.0
T =
25
°
C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
V
@ I
/I =
10
C B
BE(sat)
T =
25
°
C
A
1.0
0.7
0.5
V
BE(on)
@ V
= -10 V
CE
0.3
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55
°
C to +125
°
C
T =
25
°
C
A
I
=
-10 mA
I
= -50 mA
I
C
= -200 mA
= -100 mA
C
C
I
C
I
= -20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T =
25
°
C
A
200
150
V
CE
= -10 V
T =
25
°
C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30
-40
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
3
BC856B, BC857B, BC858A
BC856
-1.0
T =
25
°
C
J
V
= -5.0 V
CE
-0.8
T =
25
°
C
A
V
@ I
/I =
10
C B
BE(sat)
2.0
1.0
0.5
-0.6
-0.4
-0.2
0
V
@ V
= -5.0 V
CE
BE
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.1 -0.2
-1.0 -2.0
-10 -20
-100 -200
-50
-0.2 -0.5
-1.0 -2.0
-5.0 -10
-20
-50 -100
-200
-5.0
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
-2.0
-1.6
-1.2
-0.8
-0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-100 mA
-200 mA
I
=
-10 mA
-20 mA
-50 mA
C
q
for V
BE
VB
-55
°
C to 125
°
C
T =
25
°
C
J
-0.02 -0.05
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-0.2 -0.5
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
20
V
CE
= -5.0 V
500
T =
25
°
C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
-0.1 -0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-1.0
-10
-100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
4
BC856B, BC857B, BC858A
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
q
(t) = r(t) R
q
JC
JC
0.1
R
Z
= 83.3
°
C/W MAX
q
JC
0.1
0.07
0.05
P
(pk)
(t) = r(t) R
q
q
JA
JA
SINGLE PULSE
R
q
= 200
°
C/W MAX
JA
t
1
D CURVES APPLY FOR POWER
t
PULSE TRAIN SHOWN
2
0.03
0.02
READ TIME AT t
DUTY CYCLE, D = t
/t
1
1 2
T
J(pk)
− T
= P
R
q
JC
(t)
C
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk 10ꢁk
t, TIME (ms)
Figure 13. Thermal Response
The safe operating area curves indicate I
−V lim-
-200
C
CE
1 s
3 ms
its of the transistor that must be observed for reliable oper-
ation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
-100
-50
T =
25
°
C
T =
25
°
C
A
J
= 150
°
C; T
J(pk)
C
or T
is variable depending upon conditions. Pulse curves
A
are valid for duty cycles to 10% provided T
≤
150
°
C.
J(pk)
BC858
BC857
BC856
T
J(pk)
-10
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BC856BWT1G
SC−70/SOT−323
(Pb−Free)
3B
3,000 /
T
a
pe & Reel
SBC856BWT1G*
BC857BWT1G
SC−70/SOT−323
(Pb−Free)
3F
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
SBC857BWT1G*
BC857CWT1G
SC−70/SOT−323
(Pb−Free)
3G
NSVBC857CWT1G*
BC858AWT1G
SC−70/SOT−323
(Pb−Free)
3J
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
BC858BWT1G
SC−70/SOT−323
(Pb−Free)
3K
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
−
04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.65 BSC
0.38
2.10
0.026 BSC
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
E
c
A
A2
GENERIC
MARKING DIAGRAM
0.05 (0.002)
L
A1
XX M
G
SOLDERING FOOTPRINT*
G
0.65
1
0.025
0.65
0.025
XX
M
= Specific Device Code
= Date Code
G
= Pb
−
Free Package
1.9
0.075
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. N.C.
STYLE 3:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
CANCELLED
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. ANODE
3. CATHODE
3. CATHODE
STYLE 6:
STYLE 7:
PIN 1.
BASE
STYLE 8:
PIN 1.
GATE
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2. ANODE
STYLE 11:
PIN 1.
CATHODE
PIN 1.
EMITTER
2. BASE
3. COLLECTOR
PIN 1.
ANODE
2. CATHODE
3. CATHODE-ANODE
2. EMITTER
3. COLLECTOR
2. SOURCE
3. DRAIN
2. CATHODE
3. CATHODE
3. ANODE-CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC
−
70 (SOT
−
323)
PAGE 1 OF 1
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