onsemi-SBCP53T1G
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BCP53 Series
PNP Silicon
Epitaxial
T
r
ansistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
•
High Current
•
NPN Complement is BCP56
•
The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
COLLECTOR 2, 4
•
Device Marking:
BCP53T1G = AH
BCP53−10T1G = AH−10
BCP53−16T1G = AH−16
1
BASE
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
EMITTER 3
MARKING DIAGRAM
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
4
Compliant
1
AYW
XXXXX
G
G
2
3
SOT−223
CASE 318E
STYLE 1
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
−80
Unit
Vdc
Vdc
Vdc
Adc
1
V
CEO
A
Y
W
= Assembly Location
=
Y
e
ar
= Work Week
V
−100
−5.0
1.5
CBO
EBO
XXXXX =
Specific Device Code
V
G
= Pb−Free Package
I
C
(Note: Microdot may be in either location)
T
o
tal Power Dissipation
P
D
1.5
12
W
mW/
°
C
A
ORDERING INFORMATION
Derate above 25
°
C
†
Device
Package
Shipping
Operating and Storage
T
e
mperature Range
T , T
−65 to +150
°
C
J
stg
BCP53T1G
SOT−223 1000/
T
a
pe
& Reel
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device
mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
SBCP53−10T1G
BCP53−10T1G
SBCP53−10T1G
BCP53−16T1G
SBCP53−16T1G
BCP53−16T3G
SOT−223 1000/
T
a
pe
& Reel
(Pb−Free)
SOT−223 1000/
T
a
pe
& Reel
(Pb−Free)
SOT−223 1000/
T
a
pe
& Reel
(Pb−Free)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
SOT−223 1000/
T
a
pe
& Reel
(Pb−Free)
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
R
83.3
°
C/W
q
JA
SOT−223 1000/
T
a
pe
& Reel
(Pb−Free)
Lead
T
e
mperature for Soldering,
0.0625
″
from case
Time in Solder Bath
T
L
260
10
°
C
s
SOT−223 4000/
T
a
pe
& Reel
(Pb−Free)
NSVBCP53−16T3G SOT−223
4000/
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
June, 2018 − Rev. 13
BCP53T1/D
BCP53 Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I =
−100
m
Adc, I
= 0)
V
Vdc
Vdc
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
−100
−
8
0
−100
−
5
.0
−
−
−
−
−
−
−
−
−
C
E
Collector−Emitter Breakdown Voltage
(I =
−1.0 mAdc, I
= 0)
V
V
V
C
B
Collector−Emitter Breakdown Voltage
(I =
−100
m
Adc, R
= 1.0 k
W
)
Vdc
−
C
BE
Emitter−Base Breakdown Voltage
(I =
−10
m
Adc, I
= 0)
Vdc
−
E
C
Collector−Base Cutoff Current
(V =
−
3
0 Vdc, I
= 0)
I
nAdc
nAdc
CBO
−100
−100
CB
E
Emitter−Base Cutoff Current
(V =
−
5
.0 Vdc, I
= 0)
I
EBO
−
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−
5
.0 mAdc, V
=
−
2
.0 Vdc)
C
CE
All Part Types
(I =
−150 mAdc, V
=
−
2
.0 Vdc)
25
−
−
C
CE
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16, NSVBCP53−16
40
63
100
−
−
−
250
160
250
(I =
−
5
00 mAdc, V
=
−
2
.0 Vdc)
All Part Types
C
CE
25
−
−
−
−
−
Collector−Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I =
−
5
00 mAdc, I
=
−
5
0 mAdc)
−
0
.5
−1.0
C
B
Base−Emitter On Voltage
(I =
−
5
00 mAdc, V
=
−
2
.0 Vdc)
V
BE(on)
−
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I =
−10 mAdc, V
=
−
5
.0 Vdc, f = 35 MHz)
−
50
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
BCP53 Series
TYPICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
200
180
IC/IB = 10
BCP53, −10, −16
150
°
C, 5 V
150
°
C, 2 V
+150
°
C
160
140
120
100
80
−55
°
C
+25
°
C
25
°
C, 5 V
25
°
C, 2 V
−55
°
C, 5 V
−55
°
C, 2 V
60
0.4
40
0.2
0
20
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
10
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. DC Current Gain vs. Collector
Current (BCP53)
180
300
250
200
150
100
150
°
C, 5 V
150
°
C, 2 V
150
°
C, 5 V
150
°
C, 2 V
160
140
120
100
80
25
°
C, 5 V
25
°
C, 2 V
25
°
C, 5 V
25
°
C, 2 V
−55
°
C, 5 V
−55
°
C, 2 V
−55
°
C, 5 V
−55
°
C, 2 V
60
40
50
0
20
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current (BCP53−10)
Figure 4. DC Current Gain vs. Collector
Current (BCP53−16)
1.2
1.2
1.1
1.0
0.9
IC/IB = 10
BCP53, −10
IC/IB = 10
BCP53 −16
1.1
1.0
0.9
0.8
0.7
0.6
−55
°
C
−55
°
C
0.8
0.7
0.6
+25
°
C
+25
°
C
0.5
0.4
0.5
0.4
+150
°
C
+150
°
C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. BCP53, −10 Base Emitter Saturation
Voltage vs. Collector Current
Figure 6. BCP53−16 Base Emitter Saturation
Voltage vs. Collector Current
3
BCP53 Series
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.2
BCP53, −10
Vce = 2 V
BCP53 −16
Vce = 2 V
1.1
1.0
0.9
−55
°
C
0.8
−55
°
C
0.7
+25
°
C
0.6
0.5
+25
°
C
+150
°
C
0.4
0.4
0.3
0.3
0.2
+150
°
C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 7. BCP53, −10 Base Emitter Turn−On
Voltage vs. Collector Current V
BE(on)
Figure 8. BCP53−16 Base Emitter Turn−On
Voltage vs. Collector Current
1.0
110
100
BCP53, −10, −16
IC = 1.0 A
IC = 1.5 A
BCP53−10
BCP53
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
IC = 500 mA
90
80
70
60
IC = 100 mA
BCP53−16
50
40
0.1
0
0.001
0.01
0.1
1
0
1
2
3
4
5
I ,
BASE CURRENT (A)
b
VOLTAGE (V)
Figure 9. BCP53, −10, −16 Saturation Region
Figure 10. Input Capacitance
25
20
10
1
100 ms
1 s
10 ms
1 ms
BCP53−10
15
10
BCP53
CONTINUOUS THERMAL LIMIT
0.1
BCP53−16
5
0
SINGLE PULSE TEST AT T
= 25
°
C
amb
0.01
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
VOLTAGE (V)
Vce, COLLECTOR EMITTER VOLTAGE (V)
Figure 11. Output Capacitance
Figure 12. Standard Operating Area
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1.
ANODE
STYLE 3:
STYLE 4:
PIN 1.
SOURCE
STYLE 5:
PIN 1.
DRAIN
PIN 1.
GATE
2. DRAIN
2. CATHODE
3. NC
2. DRAIN
3. GATE
4. DRAIN
2. GATE
3. SOURCE
4. DRAIN
3. SOURCE
4. GATE
4. CATHODE
STYLE 6:
PIN 1.
RETURN
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
ANODE 1
2. CATHODE
3. ANODE
2
CANCELLED
PIN 1.
INPUT
2. GROUND
3. LOGIC
PIN 1.
CATHODE
2. ANODE
2. INPUT
3. OUTPUT
4. INPUT
3. GATE
4. CATHODE
4. GROUND
4. ANODE
STYLE 11:
PIN 1.
MT 1
STYLE 12:
STYLE 13:
PIN 1.
INPUT
2. OUTPUT
3. NC
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. MT
2
3. GATE
4. MT
2
4. OUTPUT
GENERIC
MARKING DIAGRAM*
AYW
XXXXX
G
G
1
A
Y
= Assembly Location
=
Y
e
ar
W
= Work Week
XXXXX =
Specific Device Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
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and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
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:
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o
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