onsemi-SBCW72LT1
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BCW72LT1
General Purpose
T
r
ansistor
NPN Silicon
Features
•
Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collecto
r
−
E
mitter Voltage
Collecto
r
−
B
ase Voltage
Emitter−Base Voltage
Symbol
Value
45
Unit
Vdc
1
BASE
V
CEO
V
CBO
V
EBO
50
Vdc
5.0
Vdc
2
EMITTER
Collector Current − Continuous
I
100
mAdc
C
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
T
o
tal Device Dissipation FR−5 Board,
P
D
1
225
1.8
mW
mW/
°
C
A
2
Derate above 25
°
C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°
C/W
SOT−23 (TO−236)
CASE 318
T
o
tal Device Dissipation
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
A
STYLE 6
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
T , T
J
−55 to +150
stg
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
2. Alumina
= 0.4 x 0.3 x 0.024 in. 99.5% alumina.
K2 M
G
G
1
K2 =
Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BCW72LT1
SOT−23
3,000 /
T
a
pe & Reel
BCW72LT1G
SOT−23
3,000 /
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 2
BCW72LT1/D
275
10 k
−
0.5 V
<1.0 ns
BCW72LT1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collecto
r
−
E
mitter Breakdown Voltage
V
Vdc
Vdc
Vdc
Vdc
(BR)CEO
(I =
2.0 mAdc, V
= 0)
45
45
50
5.0
−
−
−
−
−
−
−
−
C
EB
Collecto
r
−
E
mitter Breakdown Voltage
(I =
2.0 mAdc, V
= 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
EB
Collecto
r
−
B
ase Breakdown Voltage
(I =
10
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage
(I =
10
m
Adc, I
= 0)
E
C
Collector Cutoff Current
(V =
20 Vdc, I
= 0)
I
CBO
−
−
−
−
100
10
nAdc
m
Adc
CB
E
(V =
20 Vdc, I
= 0, T
= 100
°
C)
CB
E
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
2.0 mAdc, V
= 5.0 Vdc)
200
−
450
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 0.5 mAdc)
V
Vdc
CE(sat)
−
−
−
0.21
0.25
−
C
B
(I =
50 mAdc, I
= 2.5 mAdc)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
50 mAdc, I
= 2.5 mAdc)
V
Vdc
Vdc
BE(sat)
−
0.85
−
−
C
B
Bas
e
−
E
mitter On Voltage
(I =
2.0 mAdc, V
= 5.0 Vdc)
V
BE(on)
0.6
0.75
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
pF
T
(I =
10 mAdc, V
= 5.0 Vdc, f = 100 MHz)
−
−
−
−
300
−
−
4.0
−
C
CE
Output Capacitance
(I =
0, V
= 10 Vdc, f = 1.0 MHz)
C
obo
E
CB
Input Capacitance
(I =
0, V
= 10 Vdc, f = 1.0 MHz)
C
ibo
pF
9.0
−
E
CB
Noise Figure
(I =
0.2 mAdc, V
= 5.0 Vdc, R
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
NF
dB
10
C
CE
S
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ꢀ3.0 V
+ꢀ3.0 V
t
1
10 < t
< 500
m
s
1
DUTY CYCLE = 2%
300 ns
DUTY CYCLE = 2%
+10.9 V
<
1
.0 ns
275
+10.9 V
10 k
0
C
< 4.0 pF*
C <
4.0 pF*
S
S
−ꢀ9.1 V
1N916
*
T
o
tal shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
2
BCW72LT1
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
20
10
100
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
≈ ∞
BANDWIDTH = 1.0 Hz
50
I
C
= 1.0 mA
R
= 0
S
S
20
300
m
A
300
m
A
10
100
m
A
5.0
7.0
5.0
100
m
A
2.0
1.0
10
m
A
0.5
0.2
0.1
30
m
A
30
m
A
3.0
2.0
10
m
A
10 20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10ꢁk
10
20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10ꢁk
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
500ꢁk
1ꢁM
500ꢁk
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200ꢁk
100ꢁk
50ꢁk
200ꢁk
100ꢁk
50ꢁk
20ꢁk
20ꢁk
10ꢁk
10ꢁk
5ꢁk
2.0 dB
1.0 dB
5ꢁk
2ꢁk
1ꢁk
3.0 dB
4.0 dB
2.0 dB
2ꢁk
1ꢁk
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
500
200
100
50
200
100
10
20 30
50 70 100
200 300
500 700
1ꢁk
10
20 30
50 70 100
200 300
500 700
1ꢁk
I ,
COLLECTOR CURRENT (
m
A)
C
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500ꢁk
10 Hz to 15.7 kHz
200ꢁk
100ꢁk
50ꢁk
Noise Figure is defined as:
2
20ꢁk
2
2 1
ń
2
e
n
)
4KTR
)
I
R
S
S
n
10ꢁk
5ꢁk
10
ǒ
Ǔ
NF
+
20 log
4KTR
S
1.0 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
2ꢁk
1ꢁk
2.0 dB
I
= Noise Current of the Transistor referred to the input. (Figure 4)
n
3.0 dB
−23
K
T
R
= Boltzman’s Constant (1.38 x 10
=
T
e
mperature of the Source Resistance (
°
K)
= Source Resistance (Ohms)
j/
°
K)
500
5.0 dB
8.0 dB
200
100
50
S
20 30
50 70 100
200 300
500 700
1ꢁk
10
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 7. Wideband
3
BCW72LT1
TYPICAL STATIC CHARACTERISTICS
400
200
T =
125
°
C
J
25
°
C
−ꢀ5
5
°
C
100
80
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7
1.0
3.0
2.0
5.0 7.0 10
20
30
50 70
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
100
T
= 25
°
C
PULSE WIDTH = 300
m
s
A
T =
25
°
C
J
I
B
= 500
m
A
400
m
A
DUTY CYCLE
≤
2.0%
80
60
300
m
A
200
m
A
I
C
= 1.0 mA
10 mA
50 mA
100 mA
40
20
0
100
m
A
0.002 0.005 0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
0
5.0
10
15
20
25
30
35
40
I ,
BASE CURRENT (mA)
B
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I
/I
≤
h /2
C B
FE
T =
25
°
C
J
25
°
C to 125
°
C
−
5
5
°
C to 25
°
C
1.0
0.8
0.6
0.4
*
q
for V
VC
CE(sat)
V
@ I
/I =
10
C B
BE(sat)
−ꢀ0.8
−ꢀ1.6
−ꢀ2.4
V
@ V
= 1.0 V
CE
BE(on)
25
°
C to 125
°
C
−
5
5
°
C to 25
°
C
0.2
0
q
for V
BE
VB
V
@ I
/I =
10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0 10 20
50 100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
4
BCW72LT1
TYPICAL DYNAMIC CHARACTERISTICS
300
200
1000
V
I /I
= 10
= 3.0 V
CC
700
500
C B
t
s
T =
25
°
C
J
100
70
300
200
50
t
r
100
70
30
20
t
f
50
t @
V
d
= 0.5 Vdc
BE(off)
V
I /I
= 10
= 3.0 V
10
CC
30
20
C B
7.0
5.0
I =
I
B1 B2
T =
25
°
C
J
3.0
10
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
100
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. Turn−On Time
Figure 14. Turn−Off Time
500
10
7.0
5.0
T =
25
°
C
J
f = 1.0 MHz
T =
25
°
C
J
f = 100 MHz
300
200
C
ib
V
= 20 V
CE
5.0 V
C
ob
3.0
2.0
100
70
50
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20 30
50
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. Current−Gain — Bandwidth Product
Figure 16. Capacitance
20
10
200
100
V
f = 1.0 kHz
= 10 Vdc
V
f = 1.0 kHz
= 10 Vdc
CE
CE
h
≈
200 @ I
= 1.0 mA
C
fe
T
= 25
°
C
T
= 25
°
C
A
A
7.0
5.0
70
50
h
≈
200 @ I
= 1.0 mA
fe
C
3.0
2.0
30
20
1.0
0.7
0.5
10
7.0
5.0
0.3
0.2
3.0
2.0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 17. Input Impedance
Figure 18. Output Admittance
5
BCW72LT1
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
DUTY CYCLE, D = t
/t
1
2
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
0.02
0.01
READ TIME AT t
(SEE AN−569)
1
0.03
0.02
t
1
Z
T
= r(t)
•
R
q
JA(t)
q
JA
− T
= P
Z
SINGLE PULSE
J(pk)
A
(pk)
q
JA(t)
t
2
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
5.0
10 20
50
100 200
500 1.0ꢁk
2.0ꢁk 5.0ꢁk
10ꢁk 20ꢁk
100ꢁk
50ꢁk
t, TIME (ms)
Figure 19. Thermal Response
4
3
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
= 30 Vdc
CC
A train of periodical power pulses can be represented by the model
as shown in Figure 19A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
10
10
2
I
CEO
To
f
ind Z
, multiply the value obtained from Figure 19 by the
q
JA(t)
steady state value R
.
1
0
q
JA
10
10
Example:
I
CBO
AND
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
I
@ V
= 3.0 Vdc
t =
1.0 ms, t
= 5.0 ms. (D = 0.2)
1 2
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
CEX
BE(off)
−1
−2
10
10
The peak rise in junction temperature is therefore
−4 −2
0
0
+
2
0
+
4
0
+
6
0
+
8
0
+
1
00
+
1
20
+
1
40
+
1
60
D
T = r(t) x P
x R
= 0.22 x 2.0 x 200 = 88
°
C.
q
JA
(pk)
0
T , JUNCTION TEMPERATURE (
°
C)
J
For more information, see AN−569.
Figure 19A.
400
200
100
m
s
The safe operating area curves indicate I −V
limits of the
CE
C
1.0 ms
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
10
m
s
1.0 s
100
T
= 25
°
C
C
The data of Figure 20 is based upon T
= 150
°
C; T
or T
is
dc
J(pk)
C A
60
40
T
A
= 25
°
C
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided T
≤
150
°
C. T
may be calculated from
dc
J(pk)
J(pk)
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
20
10
T =
150
°
C
J
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
40
2.0
4.0 6.0
8.0 10
20
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 20.
6
BCW72LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING
DIMENSION: INCH.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01
THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
E
2.10
2.40
2.64
0.083
0.094
0.104
STYLE 6:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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: 800−282−9855
T
o
ll Free
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.
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o
ll Free USA/Canada
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o
kyo, Japan 153−0051
Phone
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For additional information, please contact your
local Sales Representative.
BCW72LT1/D
