onsemi-SBSS84LT1G
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BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50
V
,
1
0
W
•
SOT−23 Surface Mount Package Saves Board Space
•
BV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
V
R
MAX
DS(ON)
(BR)DSS
•
These Devices are Pb−Free and are RoHS Compliant
−50 V
10
W
@ 10 V
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
P−Channel
3
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Symbol
Value
50
Unit
Vdc
Vdc
mA
V
DSS
V
GS
20
Continuous @ T
= 25
°
C
I
130
520
1
A
D
I
Pulsed Drain Current (t
≤
10
m
s)
DM
p
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
225
mW
A
2
Operating and Storage
T
e
mperature
Range
T , T
− 55 to
150
°
C
J
stg
3
Thermal Resistance − Junction−to−Ambient
R
556
260
°
C/W
°
C
q
JA
SOT−23
CASE 318
STYLE 21
Maximum Lead
T
e
mperature for Soldering
Purposes, for 10 seconds
T
L
1
2
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD M
G
G
1
Gate
2
Source
PD
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
BSS84LT1G
SOT−23
3000 /
T
a
pe & Reel
(Pb−Free)
BVSS84LT1G
SOT−23
3000 /
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
October, 2016 − Rev. 9
BSS84LT1/D
BSS84L, BVSS84L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
−50
−
−
Vdc
(BR)DSS
(V =
0 Vdc, I
= −250
m
Adc)
GS
D
Zero Gate Voltage Drain Current
(V =
−25 Vdc, V
= 0 Vdc)
I
m
Adc
DSS
−
−
−
−
−
−
−0.1
−15
−60
DS
GS
(V =
−50 Vdc, V
= 0 Vdc)
DS
GS
(V =
−50 Vdc, V
= 0 Vdc, T
= 125
°
C)
DS
GS
J
Gate−Body Leakage Current (V
=
20 Vdc, V
= 0 Vdc)
I
−
−
10
nAdc
GS
DS
GSS
Gate−Source Threaded Voltage (V
= V
, I
= −250
m
A)
V
−0.9
−
−
4.7
−
−2.0
10
−
Vdc
W
DS
GS
D
GS(th)
Static Drain−to−Source On−Resistance (V
= −5.0 Vdc, I
= −100 mAdc)
R
GS
D
DS(on)
Transfer Admittance (V
= −25 Vdc, I
= −100 mAdc, f = 1.0 kHz)
|y |
fs
50
mS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
V
V
= 5.0 Vdc
= 5.0 Vdc
= 5.0 Vdc
C
−
−
−
36
17
−
−
−
pF
ns
DS
DS
DG
iss
C
oss
V
C
6.5
rss
Turn−On Delay Time
t
−
−
−
−
−
3.6
9.7
12
−
−
−
−
−
d(on)
Rise Time
t
r
V
= −15 Vdc, I
= −2.5 Adc,
D
DD
R =
50
W
L
Turn−Off Delay Time
Fall Time
t
d(off)
t
1.7
2.2
f
Gate Charge
V
= −40 Vdc, I
= −0.5 A,
Q
T
nC
DD
D
V
GS
= −10 V
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
I
−
−
−
−
−
−
−0.130
−0.520
−2.2
A
V
S
Pulsed Current
I
SM
V
GS
= 0
V
, I
= −130 mA
V
SD
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
2. Switching
characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.5
0.45
0.4
25
°
C
V
DS
= 10 V
V
GS
= -3.5 V
-3.25 V
T =
25
°
C
J
–
5
5
°
C
150
°
C
0.35
0.3
-3.0 V
0.25
0.2
-2.75 V
-2.5 V
0.15
0.1
0.1
0
-2.25 V
0.05
0
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
6
7
8
9
10
-V ,
GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
-V ,
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
2
BSS84L, BVSS84L
TYPICAL ELECTRICAL CHARACTERISTICS
9
8
7
6
5
4
3
2
7
150
°
C
V
GS
= -4.5 V
V
GS
= -10 V
6.5
6
150
°
C
5.5
5
4.5
4
25
°
C
25
°
C
3.5
3
-55
°
C
-55
°
C
2.5
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0
0.1
0.2
0.3
0.4
0.5
0.6
-I ,
DRAIN CURRENT (AMPS)
D
-I ,
DRAIN CURRENT (AMPS)
D
Figure 4. On−Resistance versus Drain Current
Figure 3. On−Resistance versus Drain Current
2
-8
-7
-6
-5
-4
V
DS
= -40 V
1.8
1.6
1.4
1.2
1
V
= -10 V
I =
-0.52 A
GS
T =
25
°
C
J
D
V
= -4.5 V
I =
-0.13 A
GS
D
I =
-0.5 A
D
-3
-2
0.8
-1
0
0.6
-ꢀ55
-5
45
95
145
0
500
1000
1500
2000
T , JUNCTION TEMPERATURE (
°
C)
J
Q , TOTAL GATE CHARGE (pC)
T
Figure 6. Gate Charge
Figure 5. On−Resistance Variation with Temperature
1
T =
150
°
C
J
25
°
C
-55
°
C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
-V ,
DIODE FORWARD VOLTAGE (VOLTS)
SD
Figure 7. Body Diode Forward Voltage
3
BSS84L, BVSS84L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 21:
PIN 1.
GATE
END VIEW
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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o
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o
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◊
BSS84LT1/D
