onsemi-SFF9250L

Part #	onsemi-SFF9250L
Download	onsemi-SFF9250L

Advanced Power MOSFET

SFF9250L

FEATURES

DSS

= -200

DS(on)

= 0.23

Ω

= -12.6

❑

Logic-Level Gate Drive

❑

Avalanche Rugged Technology

❑

Rugged Gate Oxide Technology

❑

Lower Input Capacitances

❑

Improved Gate Charge

❑

Extended Safe Operating Area

❑

Lower Leakage Current : 10uA (Max.) @ V

=-200V

❑

Lower R

DS(ON)

: 0.175

Ω

(Typ.)

TO-3PF

1.Gate 2.

Drain 3.

Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

-200

-12.6

-7.9

Units

DSS

Continuous Drain Current (T

=25

Continuous Drain Current (T

=100

Drain Current-Pulsed

①

-50.4

990

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

-12.6

20.4

-5.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

=25

Linear Derating Factor

dv/dt

V/ns

, T

STG

0.72

Operating Junction and

– 55

to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8

″

from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

Max.

Units

0.61

—

C /W

Rev. A

P-CHANNEL

POWER MOSFET

SFF9250L

Electrical Characteristics

=25

C unless

otherwise specified)

Symbol

Characteristic

Test Condition

Min. Typ. Max.

Units

DSS

Drain-Source Breakdown Voltage

_{GS
=0V,I
D
=-250
μ
A}

-200 —

— -0.17

-1.0 —

—

BV/

Breakdown Voltage Temp. Coeff.

C I

=-250

See Fig 7

_{DS
=-5V,I
D
=-250
μ
A}

_GS
=-20V

GS(th)

Gate Threshold Voltage

-2.0

100

-100

Gate-Source Leakage

, Forward

Gate-Source Leakage

, Reverse

—

GSS

=20V

=-200V

DSS

Drain-to-Source Leakage Current

=-160V,T

=125

100

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

DS(on)

_{GS
=-5V,I
D
=-6.3A}

④

Ω

— .175

0.23

iss

oss

rss

d(on)

=-40V,I

=-6.3A

—

— 2500

3250

=0V,V

=-25V,f =1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

—

520 pF

270

400

210

See Fig 5

=-100V,I

=-12.6A,

310

150

100

=6.2

Ω

d(off)

Turn-Off Delay Time

Fall Time

210

140

120

See Fig 13

④ ⑤

Total Gate Charge

Gate-Source Charge

Gate-Drain(Miller) Charge

=-160V,V

=-5V,

=-12.6A

—

See Fig 6 & Fig 12

④ ⑤

—

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max.

Units

Test Condition

Integral reverse pn-diode

in the MOSFET

—

-12.6

-50.4

-1.5

—

①

④

—

=25

C,I

=-12.6A,V

=0V

260

2.8

ns T

=25

C,I

=-19.5A,V

=-160V

C di

/dt=100A/

—

④

Notes ;

①

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

②

L=3.9mH, I

=-19.5A, V

=-50V, R

=27

Ω

, Starting T

=25

℃

③

≤

-19.5A, di/dt

≤

500A/

s, V

≤

DSS

, Starting T

=25

℃

④

Pulse Test : Pulse Width

≤

300

s, Duty Cycle

≤

⑤

Essentially Independent of Operating Temperature

P-CHANNEL

POWER MOSFET

SFF9250L

Fig 1.

Output Characteristics

Fig 2.

Transfer Characteristics

-10.0 V

-8.0 V

-6.0 V

-5.0 V

-4.5 V

-4.0 V

-3.5 V

Top :

Bottom :

-3.0 V

℃

150

℃

-55

※

Note

Note :

ꢀ

1. V

= -40V

1. 250

s Pulse Test

ꢀ

℃

2. T

2. 250

s Pulse Test

-1

-V

, Gate-Source Voltage

[V]

-V

, Drain-Source Voltage [V]

Fig 3.

On-Resistance vs. Drain Current

Fig 4.

Source-Drain Diode Forward Voltage

0.8

0.6

0.4

0.2

0.0

= – 5V

= – 10V

℃

150

℃

※

Note :

1. V

= 0V

※

℃

Note : T = 25

ꢀ

2. 250

s Pulse Test

-1

100

0.6

1.2

1.8

2.4

3.0

3.6

-I

, Drain Current

[A]

-V

, Source-Drain Voltage

[V]

Fig 5.

Capacitance vs. Drain-Source Voltage

Fig 6.

Gate Charge vs. Gate-Source Voltage

12000

10500

9000

7500

6000

4500

3000

1500

_{iss
= C
gs
+ C
gd
(C
ds
= shorted)}

oss

= C

+ C

_{rss
= C
gd}

= -40V

= -100V

= -160V

※

Note ;

1. V

= 0 V

2. f = 1 MHz

iss

oss

rss

※

Note : I

= -19.5 A

-1

100

, Total Gate Charge [nC]

-V

, Drain-Source Voltage [V]

P-CHANNEL

POWER MOSFET

SFF9250L

Fig 7.

Breakdown Voltage vs. Temperature

Fig 8.

On-Resistance vs. Temperature

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

0.9

0.8

※

Note :

※

Note :

1. V

= 0 V

1. V

= -5 V

2. I

= -9.8 A

ꢀ

2. I

= -250

-100

-50

100

150

200

-100

-50

100

150

200

, Junction Temperature [

]

, Junction Temperature [

Fig 9.

Max. Safe Operating Area

Fig 10.

Max. Drain Current vs. Case Temperature

Operation in This Area

is Limited by R

DS(on)

-1

100

1 ms

10 ms

※

Notes :

1. T

= 25

2. T

= 150

3. Single Pulse

100

125

150

℃

, Case Temperature [

]

-V

, Drain-Source Voltage [V]

Fig 11.

Thermal Response

1 0

D = 0 .5

※

N o te s

1 .

ꢁ

(

2 .

D u

F a c to r,

D = t

℃

/W M

a x .

6 1

1 0

–

3 .

J M

– T

= P

D M

* Z

ꢁ

(

0 5

0 2

0 1

sin g le

p u lse

1 0

–

1 0

–

1 0

–

1 0

–

1 0

–

1 0

–

1 0

, S

q u a

W a

v e

P u ls e

D u ra tio n

[s e c ]

P-CHANNEL

POWER MOSFET

SFF9250L

Fig 12.

Gate Charge Test Circuit

& Waveform

Same Type

50K

as DUT

12V

200nF

-5V

300nF

DUT

-3mA

Charge

Fig 13.

Resistive Switching Test Circuit

& Waveforms

off

d(on)

d(off)

( 0.5 rated V

)

10%

DUT

-5V

90%

Fig 14.

Unclamped Inductive Switching Test Circuit

& Waveforms

DSS

——————–

DSS

— V

—-

Time

(t)

DUT

-5V

DSS

P-CHANNEL

POWER MOSFET

SFF9250L

Fig 15.

Peak Diode Recovery dv/dt Test Circuit

& Waveforms

DUT

Driver

Compliment of DUT

(N-Channel)

• dv/dt controlled by

• I

controlled by pulse period

Gate Pulse Width

————————–

D =

Gate Pulse Period

( Driver )

, Body Diode Forward Current

di/dt

( DUT )

Body Diode Reverse Current

Body Diode Recovery dv/dt

( DUT )

Body Diode

Forward Voltage Drop

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOL

™

DenseTrench™

DOME™

POP™

Power247™

PowerTrenc

QFET™

EcoSPARK™

CMOS

TinyLogic™

QS™

EnSigna

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILEN

WITCHE

FACT™

FACT Quiet Series™

UltraFE

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT

UNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILIT

RISING OUT OF THE APPLICATION OR USE O

NY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICE

YSTEM

ITHOU

XPRES

RITTE

PPROVA

AIRCHIL

EMICONDUCTO

ORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

Product Folder – Fairchild P/N SFF9250L – 200V P-Channel Logic Level A-FET

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