onsemi-SFT1342-E
| Part # | onsemi-SFT1342-E |
Download  | onsemi-SFT1342-E |
Ordering number : ENA1559B
SFT1342
Power MOSFET
–60V, 62m
Ω
, –12A, Single P-Channel
Electrical Connection
Features
•
Low On-Resistance
•
Low Gate Charge
P-Channel
•
High Speed Switching
•
ESD Diode-Protected Gate
2, 4
•
Pb-free and RoHS Compliance
1
Specifications
Absolute Maximum Ratings
at Ta = 25
°
C
3
Parameter
Symbol
Value
Unit
V
Drain to Source Voltage
V
DSS
–60
±20
–12
Packing Type:TL
Marking
T1342
V
Gate to Source Voltage
Drain Current (DC)
V
GSS
A
I
I
D
Drain Current
–48
A
DP
PW
≤
10
μ
s, duty cycle
≤
1%
LOT No.
1.0
15
W
W
TL
Power Dissipation
P
D
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
150
°
C
°
C
Tstg
−
55 to +150
4
4
Thermal Resistance Ratings
Parameter
2
1
Symbol
Value
8.33
125
Unit
3
1
Junction to Case Steady State
Junction to Ambient *
1
R
R
θ
JC
IPAK(TP)
DPAK(TP-FA)
2
°
C/W
3
θ
JA
Note : *
1
Insertion mounted
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2014
September, 2014
91014 TKIM TC-00003149/60612 TKIM/O1409PA TKIM TC-00002077 No.A1559-1/6
SFT1342
Electrical Characteristics
at Ta
=
25
°
C
Value
typ
Parameter
Symbol
Conditions
Unit
min
–60
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
= –1mA, V
=0V
V
μ
A
μ
A
V
BR DSS
D
GS
I
I
V
V
V
V
= –60V, V
=0V
–1
DSS
DS
GS
DS
DS
GS
=±16V, V
=0V
DS
10
GSS
V
(th)
GS
= –10V, I
= –1mA
–1.2
–2.6
D
Forward Transconductance
g
= –10V, I
= –6A
11
S
FS
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
= –6A, V
= –10V
GS
47
62
62
87
96
m
Ω
m
Ω
m
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
D
D
D
Static Drain to Source On-State Resistance
= –6A, V
= –4.5V
GS
= –6A, V
= –4V
GS
68
Input Capacitance
Ciss
1150
115
95
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
= –20V, f=1MHz
DS
t (on)
d
10
t
37
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
135
75
t
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
26
Qgs
Qgd
V
= –30V, V
= –10V, I
= –12A
DS GS
3.5
5
D
V
SD
I =
–12A, V
=0V
GS
–0.95
–1.2
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V =
–
–
30V
DD
V
IN
0V
–
–
10V
I
=
–
–
6A
D
V
IN
R =5
Ω
L
D
V
OUT
PW=10
μ
s
D.C.≤1%
G
SFT1342
P
.
G
50
Ω
S
No.A1559-2/6
SFT1342
No.A1559-3/6
SFT1342
No.A1559-4/6
SFT1342
Package Dimensions
SFT1342-TL-E/ SFT1342-TL-W
DPAK/TP-FA
unit : mm
4
2
1
3
1:Gate
2:Drain
3:Source
4:Drain
Recommended
Soldering Footprint
7.0
1.5
2.3
2.3
No.A1559-5/6
SFT1342
Package Dimensions
SFT1342-E/ SFT1342-W
IPAK/TP
Unit : mm
4
1
2
3
1:Gate
2:Drain
3:Source
4:Drain
Ordering & Package Information
Device
Package
IPAK(TP)
Shipping
Note
SFT1342-E
Pb-Free
500pcs. / bag
700pcs. / reel
SC-64,TO-251
SFT1342-W
Pb-Free and Halogen Free
SFT1342-TL-E
SFT1342-TL-W
Pb-Free
DPAK(TP-FA)
SC-63,TO-252
Pb-Free and Halogen Free
Note on usage : Since the SFT1342 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiarie
s
i
n the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pd
f
.
S
CILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilit
y
o
f its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other application
s
i
ntended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
PS No.A1559-6/6
