onsemi-SFT1446-H
| Part # | onsemi-SFT1446-H |
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Order
i
n
g number : EN
A
1
742A
SFT1446
N-Channel Power MOSFET
Ω
60V, 20A, 51m
, Single TP/TP-FA
F
e
atures
•
•
•
•
•
ON-resistance R
(on)1=39m (typ.)
4V drive
Protection diode in
Input Capacitance
Ciss=750pF(typ.)
Halogen free compliance
Ω
DS
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
60
±20
20
D
S
S
V
V
GSS
I
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
I
DP
PW 10 s,
duty cyc
l
e
1
%
80
A
≤
μ
≤
1
W
W
°C
°C
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
P
D
T
c
=25 C
23
°
Channel
T
e
mperature
Storage
T
e
mperature
T
c
h
150
T
s
tg
–
–
55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
7518-004
7003-004
2.3
6.5
5.0
6.5
5.0
4
2.3
SF
T
1
446-H
SF
T
1
446-
T
L
–
H
0.5
0.5
4
0.5
0.85
0.85
0.7
1.2
1
2
3
0.6
0 to 0.2
1.2
0.6
0.5
1 : Gate
1 : Gate
2 : Dr
a
i
n
3 :
S
ou
r
c
e
4 : Dr
a
i
n
2 : Dr
a
i
n
3 :
S
ource
4 : Dr
a
i
n
1
2
3
2.3
2.3
T
P
–
F
A
2.3
2.3
TP
Product &
Package
I
n
f
o
rmat
i
o
n
• Package : TP
Product &
Package
I
n
f
o
rmat
i
o
n
• Package : TP-FA
2,4
• JEITA, JEDEC : SC-64, TO-251
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
T
a
p
i
n
g
T
y
p
e
(
T
P
–
F
A) : TL
• Minimum Packing Quantity : 500 pcs./bag
M
a
rk
i
n
g
(
TP, T
P
–
F
A)
T1446
1
L
O
T No.
TL
3
Semiconductor Components Industries, LLC, 2013
July, 2013
13013 TKIM/60210
P
A
T
KIM TC-00002331
No. A1742-1/9
SFT1446
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V
=0V
60
V
μ
A
μ
A
V
(BR)DSS
D
GS
=
6
0V, V
=0V
I
I
V
V
V
V
I
1
DSS
DS
GS
DS
DS
GS
=±16
V
, V
=
0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I
=1mA
1.2
D
Forward Transfer Admittance
|
yfs
|
=10V, I
=
10
A
7.0
S
D
R
R
R
(
o
n
)
1
=10
A
, V
=
10V
D GS
39
54
51
76
87
m
m
m
Ω
Ω
Ω
DS
DS
DS
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
(
o
n
)
2
(
o
n
)
3
I
=5
A
, V
=
4.5V
D GS
I
=5
A
, V
=
4V
D GS
62
I
n
put Capac
i
t
ance
C
i
s
s
750
59
pF
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=20
V
,
f
=1MHz
pF
pF
ns
DS
47
t
t
t
t
(
o
n)
8.5
31
d
r
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
60
ns
d
f
48
ns
T
o
tal Gate Cha
r
g
e
Qg
16
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=30
V
, V
=
10
V
, I
=
14A
GS
3.3
3.6
1.01
DS
D
V
SD
I =20
A
,
V
=
0V
S
1.2
GS
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V =30V
DD
V
IN
10V
0V
I
=10A
D
V
IN
R =3
Ω
L
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
G
SF
T
1
446
P. G
50
Ω
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
Sh
i
p
p
i
n
g
memo
SF
T
1
446-H
TP
500pcs./bag
700pcs./reel
Pb Free and Ha
l
o
gen Free
SF
T
1
446-
T
L
–
H
T
P
–
F
A
I
D
— V
DS
I
— V
D GS
20
18
16
14
12
10
8
30
Tc=25
°
C
Single pulse
V
=10V
DS
Single pulse
25
20
15
10
6
3.0V
4
5
0
2
0
V
=2.5V
GS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Drain-to-Source
V
o
ltage, V
— V
IT15539
Gate-to-Source
V
o
ltage, V
GS
— V
IT15540
DS
No. A1742-2/9
SFT1446
R
(
o
n)
–
– V
GS
R
(
o
n)
–
–
T
c
DS
DS
130
120
110
100
90
140
120
100
80
Single pulse
Tc=25
°
C
Single pulse
I
D
=5A
10A
80
70
60
60
40
50
40
20
0
30
20
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
— V
IT15541
Case Temperature, Tc
–
–
°
C
IT15542
GS
|
y
fs
|
— I
I
S
— V
SD
D
5
3
2
3
2
V
=0V
V
=10V
GS
DS
Single pulse
Single pulse
10
7
5
10
7
3
2
1.0
5
7
5
3
2
3
2
0.1
7
5
3
2
1.0
7
0.01
7
5
5
3
2
3
0.1
0.001
2
3
5
7
2
3
5
7
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT15544
1.0
10
IT15543
Diode Forward
V
o
ltage, V
–
– V
SD
Drain Current, I
–
– A
D
SW
T
i
m
e
–
– I
C
i
s
s, Coss, Crss
–
– V
D
DS
2
3
2
f=1MHz
V
V
=30V
=10V
DD
GS
100
1000
7
5
7
5
3
2
3
2
t (on)
10
d
100
7
5
7
5
3
2
3
2
2
3
5
7
2
3
5
7
2
3
5
0
5
10
15
20
25
30
IT15546
0.1
1.0
10
Drain Current, I
–
– A
IT15545
Drain-to-Source
V
o
ltage, V
— V
D
DS
A S
O
V
GS
—
Q
g
2
10
9
V
=30V
=20A
DS
I
=80A (PW
≤
10
μ
s)
100
7
5
DP
I
D
8
3
2
I
=20A
D
7
10
6
7
5
5
3
2
Operation in
this area is
4
limited by R
(on).
1.0
7
5
3
DS
2
3
2
1
0
Tc=25
°
C
Single pulse
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
2
4
6
8
10
12
14
16
18
1.0
10
100
IT15548
Total Gate Charge, Qg
–
–
n
C
IT15547
Drain-to-Source
V
o
ltage, V
–
– V
DS
No. A1742-3/9
SFT1446
P
—
T
a
P
—
T
c
D
D
1.2
1.0
0.8
0.6
0.4
0.2
30
25
23
20
15
10
5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
IT15549
IT15550
Case Temperature, Tc
–
–
°
C
No. A1742-4/9
SFT1446
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
SFT1446-TL-H
No. A1742-5/9
SFT1446
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
SFT1446-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.282
mm
* For reference
7.0
1.5
2.3
2.3
No. A1742-6/9
SFT1446
B
a
g Pack
i
n
g Spec
i
fi
c
at
i
o
n
SFT1446-H
No. A1742-7/9
SFT1446
Out
l
i
n
e Draw
i
n
g
SFT1446-H
M
a
ss
(
g
)
Un
i
t
0.315
mm
* For reference
No. A1742-8/9
SFT1446
Note on usage : Since the SFT1446 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A1742-9/9
