onsemi-SGP15N60RUFTU
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September 2000
IGBT
SGP15N60RUF
Short Circuit Rated
IGBT
General Description
Features
Fairchild’s Insulated Gate Bipolar Transistor(IGBT) RUF
series provides low conduction and switching losses as well
as short circuit ruggedness. RUF series is designed for the
applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
•
•
•
•
Short Circuit rated 10us @ T
= 100
°
C, V
= 15V
C
GE
High Speed Switching
Low Saturation Voltage : V
High Input Impedance
= 2.2 V @ I
= 15A
CE(sat)
C
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
E
G
TO-220
G C E
Absolute Maximum Ratings
T =
25
°
C unless otherwise noted
C
Symbol
Description
SGP15N60RUF
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
=
25
°
C
24
A
C
I
I
C
Collector Current
@ T
= 100
°
C
15
A
C
Pulsed Collector Current
45
10
A
CM (1)
T
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
Maximum Lead
T
e
mp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
= 100
°
C
us
W
W
°
C
°
C
SC
C
P
@ T
=
25
°
C
160
D
C
@ T
= 100
°
C
64
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°
C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.77
62.5
Units
°
C
/
W
°
C
/
W
R
R
Thermal Resistance, Junction-to-Case
—
—
θ
JC
θ
JA
Thermal Resistance, Junction-to-Ambient
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
Electrical Characteristics of IGBT
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
T
e
mperature Coeff. of Breakdown
Voltage
V
V
= 0
V
, I
=
2
50uA
600
—
—
—
—
V
CES
GE
C
∆
B
/
VCES
J
= 0
V
, I
=
1
mA
0.6
V/
°
C
GE
C
∆
T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V
= 0V
—
—
—
—
250
uA
nA
CES
GES
CE
CES
GE
, V
= 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 15mA, V
= V
GE
5.0
—
6.0
2.2
2.5
8.5
2.8
—
V
V
V
GE(th)
C
C
C
CE
= 15A
,
= 24A
,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
—
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
948
101
33
—
—
—
pF
pF
pF
ies
V
= 30V
V =
0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
17
33
—
—
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
44
65
200
—
V
R
= 300
V
, I
=
1
5A,
C
d(off)
f
CC
= 13
Ω
, V
= 15V,
118
320
356
676
20
G
GE
Inductive Load, T
= 25
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
—
950
—
ts
t
t
t
t
d(on)
r
34
—
Turn-Off Delay Time
Fall Time
48
70
350
—
V
= 300
V
, I
=
1
5A,
C
d(off)
f
CC
R
= 13
Ω
, V
= 15V,
212
340
695
1035
G
GE
Inductive Load, T
= 125
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
C
on
off
ts
—
1450
V
= 300
V
, V
=
1
5V
GE
C
CC
T
Short Circuit Withstand Time
10
—
—
us
sc
@
T =
100
°
C
Q
T
o
tal Gate Charge
—
—
—
—
42
7
60
10
24
—
nC
nC
nC
nH
g
V
V
= 300
V
, I
=
1
5A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
17
7.5
L
Measured 5mm from PKG
e
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
50
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
20V
Common Emitter
T
C
= 25
℃
15V
Common Emitter
V
GE
= 15V
12V
T
C
= 25
℃
━
━
T
C
= 125
℃
——
V
GE
= 10V
0
0
0
2
4
6
8
1
10
Collector – Emitter Voltage, V
CE
[V]
Collector – Emitter Voltage, V
CE
[V]
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Saturation Voltage Characteristics
4.0
24
V
CC
= 300V
Load Current : peak of square wave
Common Emitter
V
GE
= 15V
3.5
3.0
2.5
2.0
1.5
1.0
20
30A
16
12
8
15A
I
C
= 8A
4
Duty cycle : 50%
℃
T
C
= 100
Power Dissipation = 25W
0
-50
0
50
100
150
0.1
1
10
100
1000
℃
Case Temperature, T
C
[
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
T
C
= 25
℃
C
= 125
T
16
12
8
30A
30A
12
4
4
15A
15A
I
C
= 7A
8
I
C
= 7A
8
0
0
0
4
16
20
0
4
12
16
20
Gate – Emitter Voltage, V
GE
[V]
Gate – Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
1800
1500
1200
900
600
300
0
Common Emitter
GE
= 0V, f = 1MHz
C
= 25
℃
Common Emitter
V
T
±
15V
V
CC
= 300V, V
GE
I
C
= 15A
=
℃
━
━
= 25
T
C
Ton
Tr
Cies
T
C
= 125
℃
——
100
Coes
Cres
10
1
10
Gate Resistance, R
G
[
Ω
]
100
1
10
Collector – Emitter Voltage, V
CE
[V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
1000
Common Emitter
Common Emitter
±
15V
V
CC
= 300V, V
GE
I
C
= 15A
=
±
15V
V
CC
= 300V, V
GE
C
= 15A
=
I
℃
━
━
= 25
T
C
℃
━
━
= 25
T
C
T
℃
T
C
= 125
——
℃
C
= 125
——
1000
Toff
Eoff
Eon
Toff
Tf
Eoff
Tf
100
100
1
10
Gate Resistance, R
G
[
Ω
]
100
1
10
Gate Resistance, R
G
[
Ω
]
100
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
Common Emitter
±
25
V
GE
=
±
15V,
R
G
= 13
Ω
T
C
25
℃
━
━
C
= 125
℃
——
V
GE
T
C
=
15V,
R
G
= 13
Ω
℃
━
━
℃
=
=
T
C
= 125
——
T
Ton
100
Toff
Tf
Tr
Toff
Tf
100
10
5
10
15
20
25
30
5
10
15
20
25
30
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
Fig 11. Turn-On Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
15
12
9
Common Emitter
R
L
= 20
Ω
T
C
= 25
℃
Common Emitter
±
25
V
GE
T
C
=
15V,
R
G
= 13
Ω
℃
━
━
=
℃
T
C
= 125
——
300 V
V
CC
= 100 V
Eoff
Eoff
200 V
1000
6
Eon
3
0
100
5
10
15
20
25
30
0
10
20
30
40
50
Collector Current, I
C
[A]
Gate Charge,
Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
100
I
C
MAX. (Pulsed)
50us
100us
I
C
MAX. (Continuous)
㎳
1
10
DC Operation
10
1
Single Nonrepetitive
℃
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
V
GE
= 20V, T
C
= 100
10 100
Collector-Emitter Voltage,
V
CE
[V]
1
0.1
1
1000
0.1
1
10
100
1000
Collector-Emitter Voltage,
V
CE
[V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
1
0.5
0.2
0.1
0.1
0.01
1E-3
0.05
0.02
0.01
Pdm
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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FASTr™
QFET™
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HiSeC™
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QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
PowerTrench
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. F1
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SGP15N60RUF
Discrete, Short Circuit Rated IGBT
Contents
General description
|
Features
|
Applications
|
Product status/pricing/packaging
General description
Fairchild’s Insulated Gate Bipolar
Transistor(IGBT) RUF series provides low
conduction and switching losses as well as
short circuit ruggedness. RUF series is
designed for the applications such as motor
control, UPS and general inverters where short-
circuit ruggedness is required.
This page
Print version
Design tools
back to top
Features
●
Short Circuit rated 10us @ T C =
100°C, =
15V
company
GE
●
●
High Speed Switching
Low Saturation Voltage : V
= 2.2
CE(sat)
V @ I
= 15A
C
●
High Input Impedance
back to top
Applications
AC &DC Motor controls,General
Purpose Inverters, Robotics, Servo
Controls
back to top
Product Folder – Fairchild P/N SGP15N60RUF – Discrete, Short Circuit Rated IGBT
Product status/pricing/packaging
Product
Product status
Pricing* Package
type Leads Packing
method
Full Production
$2.32 TO-220
RAIL
SGP15N60RUFTU
3
* 1,000 piece Budgetary Pricing
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