onsemi-SGP6N60UFDTU
| Part # | onsemi-SGP6N60UFDTU |
Download  | onsemi-SGP6N60UFDTU |
IGBT
SGP6N60UFD
Ultra-Fast IGBT
General Description
Features
Fairchild’s UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides
low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : V
High input impedance
= 2.1 V @ I
= 3A
CE(sat)
C
CO-PAK, IGBT with FRD : t
= 35ns (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-220
G C E
Absolute Maximum Ratings
T =
25
°
C unless otherwise noted
C
Symbol
Description
SGP6N60UFD
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
=
25
°
C
6
A
C
I
C
Collector Current
@ T
= 100
°
C
3
A
C
I
I
I
Pulsed Collector Current
25
A
CM (1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
Maximum Lead
T
e
mp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
= 100
°
C
4
A
F
C
25
30
A
FM
P
@ T
=
25
°
C
W
W
°
C
°
C
D
C
@ T
= 100
°
C
12
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°
C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
—
Max.
Units
°
C
/
W
°
C
/
W
°
C
/
W
R
R
R
(IGBT)
4.0
7.0
θ
JC
θ
JC
θ
JA
(DIODE)
—
Thermal Resistance, Junction-to-Ambient
—
62.5
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
Electrical Characteristics of the IGBT
T =
25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
T
e
mperature Coefficient of Breakdown
Voltage
V
V
= 0
V
, I
=
2
50uA
600
—
—
—
—
V
CES
GE
C
∆
B
/
VCES
J
= 0
V
, I
=
1
mA
0.6
V/
°
C
GE
C
∆
T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V
= 0V
—
—
—
—
250
uA
nA
CES
GES
CE
CES
GE
, V
= 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 3mA, V
= V
GE
3.5
—
4.5
2.1
2.6
6.5
2.6
—
V
V
V
GE(th)
C
C
C
CE
= 3A
,
= 6A
,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
—
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
220
22
7
—
—
—
pF
pF
pF
ies
V
= 30V V
= 0
V
,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
25
60
70
57
25
82
22
32
80
122
65
46
111
15
5
—
—
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
130
150
—
V
R
= 300
V
, I
=
3
A,
C
d(off)
f
CC
= 80
Ω
, V
= 15V,
G
GE
Inductive Load, T
= 25
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
—
120
—
ts
t
t
t
t
d(on)
r
—
Turn-Off Delay Time
Fall Time
200
300
—
V
= 300
V
, I
=
3
A,
C
d(off)
f
CC
R
= 80
Ω
, V
= 15
V
,
G
GE
Inductive Load, T
= 125
°
C
E
E
E
Turn
–
On Switching Loss
Turn
–
Off Switching Loss
T
o
tal Switching Loss
T
o
tal Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
C
on
off
ts
—
170
22
8
Q
Q
Q
g
V
V
= 300
V
, I
=
3
A,
CE
GE
C
ge
gc
= 15V
4
6
L
Measured 5mm from PKG
7.5
—
e
Electrical Characteristics of DIODE
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
—
Typ.
1.4
1.3
35
Max.
1.7
—
Units
T
T
T
T
T
T
T
T
=
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 4A
F
V
FM
—
=
—
52
—
t
Diode Reverse Recovery Time
ns
A
rr
—
53
=
—
3.5
4.5
60
5.0
—
Diode Peak Reverse Recovery
Current
I =
4A,
F
I
rr
di/d
t
=
2
00A/us
—
=
—
135
—
Q
Diode Reverse Recovery Charge
nC
rr
—
120
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
30
25
20
15
10
5
15
12
9
Common Emitter
GE
= 15V
20V
Common Emitter
V
℃
T
C
= 25
℃
℃
T
C
T
C
= 125
= 25
15V
12V
6
V
GE
= 10V
3
0
0
0
2
4
6
8
0.5
1
10
Collector – Emitter Voltage, V
CE
[V]
Collector – Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
8
V
CC
= 300V
Load Current : peak of square wave
Common Emitter
V
GE
= 15V
3
2
6
4
2
0
6A
3A
I
C
= 1.5A
1
0
Duty cycle : 50%
℃
T
C
= 100
Power Dissipation = 9W
0
30
60
90
120
150
0.1
1
10
100
1000
℃
Case Temperature, T
C
[
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
℃
T
C
= 125
Common Emitter
℃
T
C
= 25
16
12
8
6A
6A
4
4
3A
3A
I
C
= 1.5A
I
C
= 1.5A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate – Emitter Voltage, V
GE
[V]
Gate – Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
400
350
300
250
200
150
100
50
100
Common Emitter
Common Emitter
V
GE
= 0V, f = 1MHz
±
15V
V
CC
= 300V, V
GE
I
C
= 3A
=
℃
T
C
= 25
Ton
Tr
℃
℃
T
C
= 25
T
C
= 125
Cies
Coes
Cres
0
10
1
10
Collector – Emitter Voltage, V
CE
[V]
30
1
10
Gate Resistance, R
G
[
Ω
]
100
400
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
300
Common Emitter
Common Emitter
±
15V
V
CC
= 300V, V
GE
I
C
= 3A
=
±
15V
V
CC
= 300V, V
GE
C
= 3A
=
I
℃
℃
T
C
T
C
= 125
= 25
℃
℃
T
C
= 25
100
T
C
= 125
Eon
Toff
Eoff
Eoff
Toff
Tf
100
50
10
5
Tf
1
10
Gate Resistance, R
G
[
Ω
]
100
400
1
10
Gate Resistance, R
G
[
Ω
]
100
400
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
500
Common Emitter
Common Emitter
±
15V
V
CC
= 300V, V
GE
=
±
15V
V
CC
= 300V, V
GE
=
R
G
= 80
Ω
R
G
= 80
Ω
100
℃
℃
T
C
T
C
= 125
= 25
℃
℃
T
C
T
C
= 125
= 25
Toff
Ton
Tr
100
50
Tf
10
1
2
3
4
5
6
1
2
3
4
5
6
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
200
100
15
12
9
Common Emitter
Common Emitter
R
L
= 100
Ω
±
15V
V
CC
= 300V, V
GE
G
= 80
Ω
=
R
℃
Tc = 25
℃
℃
T
C
= 25
T
C
= 125
300 V
Eon
Eon
6
200 V
V
CC
= 100 V
Eoff
3
10
5
Eoff
1
0
2
3
4
5
6
0
3
6
9
12
15
Gate Charge,
Q
g
[ nC ]
Collector Current, I
C
[A]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
50
50
10
Ic MAX. (Pulsed)
10
50us
100us
Ic MAX. (Continuous)
㎳
1
1
0.1
DC Operation
1
Single Nonrepetitive
℃
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
V
GE
=20V, T
C
=100
o
C
10 100
Collector-Emitter Voltage,
V
CE
[V]
0.01
0.1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage,
V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
Pdm
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
100
10
1
100
10
1
℃
℃
T
C
= 25
V
R
=200V
I
F
=4A
T
C
= 100
T
C
= 25
℃
T
C
= 100
℃
0.1
0
1
2
3
4
100
1000
Forward Voltage Drop, V
FM
[V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
300
100
V
R
=200V
V
R
= 200V
I
F
=4A
I
F
= 4A
℃
℃
℃
℃
T
C
T
C
= 100
= 25
T
C
T
C
= 100
= 25
250
200
150
100
50
80
60
40
20
0
0
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™ PACMAN™
GTO™
HiSeC™
I
2
C™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
SLIENT SWITCHER
®
UHC™
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
Bottomless™
CoolFET™
CROSSVOLT
™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
UltraFET
®
VCX™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
TinyLogic™
Quiet Series™
TruTranslation™
FACT Quiet Series™
MicroPak™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
Package Dimension
TO-220
4.50
±
0.20
9.90
±
0.20
(8.70)
+0.10
–0.05
1.30
ø3.60
±
0.10
1.27
±
0.10
1.52
±
0.10
0.80
±
0.10
+0.10
–0.05
0.50
2.40
±
0.20
2.54TYP
2.54TYP
[2.54
±
0.20
]
[2.54
±
0.20
]
10.00
±
0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGP6N60UFD Rev. A1
SEARCH |
Parametric
|
Cross Reference
sp
GO
Home
>>
Find products
>>
SGP6N60UFD
Discrete, High Performance IGBT with Diode
Contents
General description
|
Features
|
Applications
|
Product status/pricing/packaging
General description
Fairchild’s UFD series of Insulated Gate
Bipolar Transistors (IGBTs) provides low
conduction and switching losses. The UFD
series is designed for applications such as
motor control and general inverters where high
speed switching is a required feature.
This page
Print version
Design tools
back to top
Features
●
●
High Speed Switching
Low Saturation Voltage : V
= 2.1
CE(sat)
company
V @ I
= 3A
C
●
●
High Input Impedance
CO-PAK, IGBT with FRD : t
= 35ns
rr
(typ.)
back to top
Applications
AC &DC Motor controls,General
Purpose Inverters, Robotics, Servo
Controls
back to top
Product status/pricing/packaging
Product Folder – Fairchild P/N SGP6N60UFD – Discrete, High Performance IGBT with Diode
Product
Product status
Pricing* Package
type Leads
$0.95 TO-220
Packing method
SGP6N60UFDTU
Full Production
3
RAIL
* 1,000 piece Budgetary Pricing
back to top
Support
|
Company
|
Contact us
|
Site index
|
Privacy policy
© Copyright 2002 Fairchild Semiconductor
