onsemi-SGW13N60UFDTM
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IGBT
SGW13N60UFD
Ultra-Fast IGBT
General Description
Features
Fairchild’s UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides
low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : V
High input impedance
= 2.1 V @ I
= 6.5A
CE(sat)
C
CO-PAK, IGBT with FRD : t
= 37ns (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
C
G
D2-PAK
G
E
Absolute Maximum Ratings
T =
25
°
C unless otherwise noted
C
Symbol
Description
SGW13N60UFD
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
=
25
°
C
13
A
C
I
C
Collector Current
@ T
= 100
°
C
6.5
A
C
I
I
I
Pulsed Collector Current
52
A
CM (1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
Maximum Lead
T
e
mp. for Soldering
Purposes from Case for 5 Seconds
@ T
= 100
°
C
8
A
F
C
56
60
A
FM
P
@ T
=
25
°
C
W
W
°
C
°
C
D
C
@ T
= 100
°
C
25
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°
C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
—
Max.
Units
°
C
/
W
°
C
/
W
°
C
/
W
R
R
R
(IGBT)
2.0
3.5
40
θ
JC
θ
JC
θ
JA
(DIODE)
—
Thermal Resistance, Junction-to-Ambient (PCB Mount)
—
(2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
Electrical Characteristics of the IGBT
T =
25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
T
e
mperature Coefficient of Breakdown
Voltage
V
V
= 0
V
, I
=
2
50uA
600
—
—
—
—
V
CES
GE
C
∆
B
/
VCES
J
= 0
V
, I
=
1
mA
0.6
V/
°
C
GE
C
∆
T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V
= 0V
—
—
—
—
250
uA
nA
CES
GES
CE
CES
GE
, V
= 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 6.5mA, V
= V
GE
3.5
—
4.5
2.1
2.6
6.5
2.6
—
V
V
V
GE(th)
C
C
C
CE
= 6.5A
,
= 13A
,
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
V
CE(sat)
V
—
GE
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
375
63
—
—
—
pF
pF
pF
ies
V
= 30V V
= 0
V
,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
13
Switching Characteristics
t
t
t
t
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
27
—
—
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
70
130
150
—
V
R
= 300
V
, I
=
6
.5A,
C
d(off)
f
CC
= 50
Ω
, V
= 15V,
97
G
GE
Inductive Load, T
= 25
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
85
C
on
off
95
—
180
30
270
—
ts
t
t
t
t
d(on)
r
32
—
Turn-Off Delay Time
Fall Time
85
200
250
—
V
= 300
V
, I
=
6
.5A,
C
d(off)
f
CC
R
= 50
Ω
, V
= 15
V
,
168
180
165
345
25
G
GE
Inductive Load, T
= 125
°
C
E
E
E
Turn
–
On Switching Loss
Turn
–
Off Switching Loss
T
o
tal Switching Loss
T
o
tal Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
C
on
off
ts
—
500
35
12
14
—
Q
Q
Q
g
V
V
= 300
V
, I
=
6
.5A,
CE
GE
C
7
ge
gc
= 15V
8
L
Measured 5mm from PKG
7.5
e
Electrical Characteristics of DIODE
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
—
Typ.
1.4
1.3
37
Max.
1.7
—
Units
T
T
T
T
T
T
T
T
=
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 8A
F
V
FM
—
=
—
55
—
t
Diode Reverse Recovery Time
ns
A
rr
—
55
=
—
3.5
4.5
65
5.0
—
Diode Peak Reverse Recovery
Current
I =
8A,
F
I
rr
di/d
t
=
2
00A/us
—
=
—
138
—
Q
Diode Reverse Recovery Charge
nC
rr
—
124
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
60
50
40
30
20
10
0
30
25
20
15
10
5
Common Emitter
V
GE
= 15V
Common Emitter
20V
℃
T
C
= 25
℃
℃
T
C
T
C
= 125
= 25
15V
12V
V
GE
= 10V
0
0
2
4
6
8
0.5
1
10
Collector – Emitter Voltage, V
CE
[V]
Collector – Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
12
V
CC
= 300V
Load Current : peak of square wave
Common Emitter
V
GE
= 15V
13A
3
2
1
0
9
6
3
0
6.5A
I
C
= 3A
Duty cycle : 50%
℃
T
C
= 100
Power Dissipation = 14W
0
30
60
90
120
150
0.1
1
10
100
1000
℃
Case Temperature, T
C
[
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
T
C
= 25
℃
C
= 125
T
16
12
8
13A
12
13A
12
4
4
6.5A
6.5A
I
C
= 3A
I
C
= 3A
0
0
0
4
8
16
20
0
4
8
16
20
Gate – Emitter Voltage, V
GE
[V]
Gate – Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
600
500
400
300
200
100
0
300
100
Common Emitter
V
GE
= 0V, f = 1MHz
Common Emitter
±
15V
V
CC
= 300V, V
GE
I
C
= 6.5A
=
℃
T
C
= 25
℃
℃
T
C
= 25
Cies
T
C
= 125
Ton
Tr
Coes
Cres
10
1
10
Collector – Emitter Voltage, V
CE
[V]
30
1
10
Gate Resistance, R
G
[
Ω
]
100
400
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
600
Common Emitter
±
15V
V
CC
= 300V, V
GE
I
C
= 6.5A
=
Eon
Toff
℃
℃
T
C
T
C
= 125
= 25
Eoff
Eon
Toff
Tf
Eoff
100
100
50
Tf
Common Emitter
±
15V
V
CC
= 300V, V
GE
=
I
C
= 6.5A
℃
℃
T
C
= 25
T
C
= 125
10
1
10
Gate Resistance, R
G
[
Ω
]
100
300
1
10
Gate Resistance, R
G
[
Ω
]
100
400
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
200
Common Emitter
Common Emitter
±
15V
±
15V
V
CC
= 300V, V
GE
=
V
CC
= 300V, V
GE
=
R
G
= 50
Ω
R
G
= 50
Ω
100
℃
℃
℃
℃
T
C
T
C
= 125
= 25
T
C
T
C
= 125
= 25
Toff
Toff
Tf
Ton
100
50
Tf
Tr
10
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
500
100
15
12
9
Common Emitter
Common Emitter
R
L
= 46
Ω
±
15V
V
CC
= 300V, V
GE
=
R
G
= 50
Ω
℃
Tc = 25
℃
℃
T
C
= 25
T
C
= 125
300 V
Eon
6
200 V
V
CC
= 100 V
Eon
Eoff
3
10
5
Eoff
0
0
2
4
6
8
10
12
14
0
5
10
15
20
25
Gate Charge,
Q
g
[ nC ]
Collector Current, I
C
[A]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
100
I
C
MAX. (Pulsed)
50us
100us
10
I
C
MAX. (Continuous)
10
㎳
1
DC Operation
1
1
Single Nonrepetitive
℃
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
0.1
V
GE
=20V, T
C
=100
o
C
10 100
Collector-Emitter Voltage,
V
CE
[V]
0.05
0.1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage,
V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.1
Pdm
0.02
0.01
t1
t2
Duty factor D = t1 / t2
single pulse
10
-4
Peak Tj = Pdm
×
Zthjc + T
C
0.01
10
-5
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
100
10
1
100
10
1
℃
℃
T
C
T
C
= 100
= 25
V
R
= 200V
I
F
= 8A
℃
℃
T
C
T
C
= 100
= 25
0.1
0
1
2
3
100
1000
di/dt [A/us]
Forward Voltage Drop, V
FM
[V]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
100
500
V
R
= 200V
I
F
= 8A
V
R
= 200V
I
F
= 8A
℃
℃
T
C
T
C
= 100
= 25
℃
℃
T
C
T
C
= 100
= 25
80
60
40
20
0
400
300
200
100
0
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
Package Dimension
D
2
-PAK
4.50
±
0.20
9.90
±
0.20
+0.10
–0.05
1.30
0.10
±
0.15
2.40
±
0.20
0.80
±
0.10
1.27
±
0.10
+0.10
0.50
–0.05
2.54 TYP
2.54 TYP
10.00
±
0.20
(8.00)
(4.40)
10.00
±
0.20
(2XR0.45)
0.80
±
0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™ PACMAN™
GTO™
HiSeC™
I
2
C™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
SLIENT SWITCHER
®
UHC™
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
Bottomless™
CoolFET™
CROSSVOLT
™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
UltraFET
®
VCX™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
TinyLogic™
Quiet Series™
TruTranslation™
FACT Quiet Series™
MicroPak™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
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SGW13N60UFD
Discrete, High Performance IGBT with Diode
Contents
General description
|
Features
|
Applications
|
Product status/pricing/packaging
General description
Fairchild’s UFD series of Insulated Gate
Bipolar Transistors (IGBTs) provides low
conduction and switching losses. The UFD
series is designed for applications such as
motor control and general inverters where high
speed switching is a required feature.
This page
Print version
Design tools
back to top
Features
●
●
High Speed Switching
Low Saturation Voltage : V
= 2.1
CE(sat)
company
V @ I
= 6.5A
C
●
●
High Input Impedance
CO-PAK, IGBT with FRD : t
= 37ns
rr
(typ.)
back to top
Applications
AC &DC Motor controls, General
Purpose Inverters, Robotics, Servo
Controls
back to top
Product status/pricing/packaging
Product Folder – Fairchild P/N SGW13N60UFD – Discrete, High Performance IGBT with Diode
Product
Product status
Pricing*
Package type
Leads Packing
method
TAPE REEL
SGW13N60UFDTM
Full Production
$1.31 TO-263(D2PAK)
2
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
