onsemi-SI4532DY
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onsemi
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onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
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onsemi
products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by
onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Si4532DY
Dual N- and P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P-Channel enhancement mode power
field effect transistors are produced using
ON
Semiconductor
‘s propretary,
high cell density, DMOS
technology. This very high
density process is especially
tailored to minimize on-state resistance and provide
superior switching performance. These devices are
particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
N-Channel 3.9A, 30V.R
DS(ON)
= 0.065
Ω
@V
GS
= 10V
R
DS(ON)
= 0.095
Ω
@V
GS
= 4.5V.
P-Channel -3.5A,-30
V
.
R
DS(ON)
= 0.085
Ω
@V
GS
= -10V
R
DS(ON)
= 0.190
Ω
@V
GS
= -4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount
package.
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Publication Order Number:
Si4532DY/D
1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
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Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a) 78
°
C/W when
c) 135
°
C/W when
mounted on a minimum
mounting pad.
b) 125
°
C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
mounted on a 0.05 in
2
pad of 2 oz. copper.
Scale 1 : 1 on
letter size paper
2.
Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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