onsemi-SI6463DQ
| Part # | onsemi-SI6463DQ |
Download  | onsemi-SI6463DQ |
April 2001
Si6463DQ
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
•
–8.8 A,
–20 V. R
DS(ON)
= 0.0125
Ω
@ V
GS
= –4.5 V
DS(ON)
= 0.018
Ω
@ V
GS
= –2.5 V
R
•
Extended V
GSS
range (
±
12V) for battery
applications
Applications
•
•
Low gate charge
•
•
•
•
Load switch
High performance trench technology for extremely
low R
DS(ON)
Motor drive
DC/DC conversion
Power management
•
Low profile TSSOP-8 package
D
S
S
5
6
7
8
4
3
2
1
D
G
S
S
D
TSSOP-8
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
–20
V
V
A
V
GSS
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
±
12
–8.8
I
D
(Note 1)
–50
P
D
Power Dissipation
(Note 1a)
(Note 1b)
1.3
W
0.6
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
96
R
θ
JA
°
C/W
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6463
Si6463DQ
13’’
16mm
3000 units
Si6463DQ Rev. A(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
–20
V
V
GS
= 0 V, I
D
= –250
µ
A
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
–12
I
D
= –250
µ
A, Referenced to 25
°
C
V
DS
= –16 V,
V
GS
= 0 V
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
–1
µ
A
nA
nA
I
GSSF
I
GSSR
V
GS
= –12 V,
V
GS
= 12 V,
V
DS
= 0 V
V
DS
= 0 V
–100
100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
–0.6
–50
–0.8
3.5
–1.5
V
V
DS
= V
GS
, I
D
= –250
µ
A
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250
µ
A, Referenced to 25
°
C
mV/
°
C
10
14
13
12.5
18
19
V
V
GS
= –4.5 V,
I
D
= –8.8 A
GS
= –2.5 V,
I
D
= –7.2 A
Static Drain–Source
On–Resistance
m
Ω
R
DS(on)
V
GS
= –4.5 V, I
D
= –8.8 A, T
J
= 125
°
C
I
D(on)
g
FS
On–State Drain Current
V
GS
= –4.5 V,
V
DS
= –10 V,
V
DS
= –5 V
I
D
= –8.8 A
A
S
Forward Transconductance
46
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
5045
1035
549
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
14
130
80
41
7
16
25
ns
ns
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
208
128
66
ns
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= –10 V,
I
D
= –8.8 A,
V
GS
= –4.5 V
11
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
–1.2
–1.2
A
V
Drain–Source Diode Forward
V
SD
V
GS
= 0 V,
I
S
= –1.2 A
(Note 2)
–0.6
Voltage
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a) R
θ
JA
is 96
°
C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θ
JA
is 208
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse
Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
Si6463DQ Rev. A(W)
Typical Characteristics
30
2
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V
-2.5V
25
-3.0V
-2.0V
V
GS
= -2.0V
20
15
-2.5V
10
-1.5V
-3.0V
-3.5V
-4.0V
5
0
-4.5V
0.8
0
0.5
1
1.5
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
1.5
1.4
1.3
1.2
1.1
1
I
D
= -4.4A
I
D
= -8.8A
0.03
0.025
0.02
V
GS
= -4.5V
T
A
= 125
o
C
0.015
0.01
T
A
= 25
o
C
0.9
0.8
0.7
0.005
1.5
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
40
30
20
10
0
V
GS
= 0V
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
10
1
T
A
= 125
o
C
25
o
C
-55
o
C
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1
1.5
2
2.5
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6463DQ Rev. A(W)
Typical Characteristics
8000
7000
6000
5000
4000
3000
2000
1000
0
5
I
D
= -8.8A
V
DS
= -5V
f = 1 MHz
GS
= 0 V
-10V
V
4
3
2
1
0
-15V
C
ISS
C
OSS
C
RSS
0
10
20
30
40
50
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
µ
100
10ms
100ms
s
SINGLE PULSE
R
θ
JA
= 208°C/W
R
DS(ON)
LIMIT
T
A
= 25°C
1s
10s
1
DC
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 208
o
C/W
0.1
0.01
T
A
= 25
o
C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
0.2
R
θ
JA
= 208 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
0.01
0.01
t
2
T
J
– T
A
= P * R
θ
JA
(t)
SINGLE PULSE
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6463DQ Rev. A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE T
O
A
NY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NO
T
A
SSUM
E
A
NY LIABILIT
Y
A
RISING OUT OF TH
E
A
PPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
