onsemi-SMMBT2369ALT1G
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MMBT2369L, MMBT2369AL
Switching
T
r
ansistors
NPN Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
MARKING
DIAGRAM
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT
−
23
CASE 318
STYLE 6
1
xxx M
G
G
MAXIMUM RATINGS
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitte
r
−
Base Voltage
Symbol
Value
15
Unit
Vdc
xxx =
M1J or 1JA
M
G
= Date Code*
= Pb
−
Free Package
V
CEO
V
V
40
Vdc
CES
(Note: Microdot may be in either location)
40
Vdc
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
CBO
EBO
V
4.5
200
Vdc
Collector Current
−
Continuous
I
C
mAdc
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5 Board
P
D
1
225
1.8
mW
mW/
°
C
A
BASE
Derate above 25
°
C
Thermal Resistance, Junction
−
to
−
Ambient
R
556
°
C/W
q
JA
2
EMITTER
T
o
tal Device Dissipation Alumina
P
D
300
2.4
mW
mW/
°
C
A
Thermal Resistance, Junction
−
to
−
Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
ORDERING INFORMATION
T , T
J
−
55 to +150
stg
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
MMBT2369
L
T
1G
SOT
−
23
3,000 /
(Pb
−
Free)
T
a
pe & Reel
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
MMBT2369
L
T
3G
SMMBT2369
L
T
1G
MMBT2369A
L
T
1G
SMMBT2369A
L
T
1G
SOT
−
23
(Pb
−
Free)
10,000 /
T
a
pe & Reel
SOT
−
23
(Pb
−
Free)
3,000 /
T
a
pe & Reel
SOT
−
23
(Pb
−
Free)
3,000 /
T
a
pe & Reel
SOT
−
23
3,000 /
(Pb
−
Free)
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2018
−
Rev. 11
MMBT2369
L
T
1/D
MMBT2369L, MMBT2369AL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Vdc
Vdc
Vdc
Vdc
m
Adc
(BR)CEO
(I =
10 mAdc, I
= 0)
15
40
40
4.5
−
−
−
−
−
−
−
−
C
B
Collecto
r
−
Emitter Breakdown Voltage
(I =
10
m
Adc, V
= 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
BE
Collecto
r
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
E
C
Collector Cutoff Current
(V =
20 Vdc, I
= 0)
I
CBO
−
−
−
−
0.4
30
CB
E
(V =
20 Vdc, I
= 0, T
= 150
°
C)
CB
E
A
Collector Cutoff Current
I
m
Adc
CES
MMBT2369A (V
= 20 Vdc, V
= 0)
−
−
0.4
CE
BE
ON CHARACTERISTICS
h
FE
−
MMBT2369 (I
= 10 mAdc, V
= 1.0 Vdc)
40
−
40
20
30
20
20
−
−
−
−
−
−
−
120
120
−
C
CE
MMBT2369A (I
= 10 mAdc, V
= 1.0 Vdc)
C
CE
CE
CE
CE
CE
CE
MMBT2369A (I
= 10 mAdc, V
= 0.35 Vdc)
C
MMBT2369A (I
= 10 mAdc, V
= 0.35 Vdc, T
=
−
55
°
C)
−
C
A
MMBT2369A (I
= 30 mAdc, V
= 0.4 Vdc)
−
C
MMBT2369 (I
= 100 mAdc, V
= 2.0 Vdc)
−
C
MMBT2369A (I
= 100 mAdc, V
= 1.0 Vdc)
−
C
MMBT2369 (I
= 10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
−
−
−
−
−
−
−
0.25
0.20
0.30
0.25
0.50
C
B
MMBT2369A (I
= 10 mAdc, I
= 1.0 mAdc)
C
B
MMBT2369A (I
= 10 mAdc, I
= 1.0 mAdc, T
= +125
°
C)
C
B
A
MMBT2369A (I
= 30 mAdc, I
= 3.0 mAdc)
C
B
MMBT2369A (I
= 100 mAdc, I
= 10 mAdc)
C
B
MMBT2369/A (I
= 10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
0.7
−
−
−
−
−
−
−
0.85
1.02
1.15
1.60
C
B
MMBT2369A (I
= 10 mAdc, I
= 1.0 mAdc, T
=
−
55
°
C)
C
B
A
MMBT2369A (I
= 30 mAdc, I
= 3.0 mAdc)
C
B
MMBT2369A (I
= 100 mAdc, I
= 10 mAdc)
C
B
SMALL
−
SIGNAL CHARACTERISTICS
Output Capacitance
C
pF
obo
(V =
5.0 Vdc, I
= 0, f = 1.0 MHz)
−
−
−
4.0
CB
E
Small Signal Curren
t
G
ain
(I =
10 mAdc, V
= 10 Vdc, f = 100 MHz)
h
−
fe
5.0
−
C
CE
SWITCHING CHARACTERISTICS
Storage Time
t
ns
ns
ns
s
(I =
I =
I =
10 mAdc)
−
−
−
5.0
8.0
10
13
12
18
B1
B2
C
Turn
−
On Time
t
t
on
(V =
3.0 Vdc, I
= 10 mAdc, I
= 3.0 mAdc)
CC
C
B1
Turn
−
Off Time
off
(V =
3.0 Vdc, I
= 10 mAdc, I
= 3.0 mAdc, I
= 1.5 mAdc)
CC
C
B1
B2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2
MMBT2369L, MMBT2369AL
270
W
95
W
t
1
t
1
3 V
+10.6 V
0
10 V
+10.8 V
0
-1.5 V
-2 V
< 1 ns
3.3 k
C * < 4 pF
s
< 1 ns
1 k
C * < 12 pF
s
PULSE WIDTH (t
) = 300 ns
1
DUTY CYCLE = 2%
PULSE WIDTH (t
) = 300 ns
1
DUTY CYCLE = 2%
*
T
o
tal shunt capacitance of test jig and connectors.
Figure 2. t
on
Circuit
−
100 mA
Figure 1. t
on
Circuit
−
10 mA
95
W
270
W
t
1
t
1
10 V
+11.4 V
0
+10.75 V
0
-9.15 V
-8.6 V
1 k
C * < 12 pF
s
3.3 k
C * < 4 pF
s
< 1 ns
< 1 ns
1N916
PULSE WIDTH (t
) BETWEEN
1
PULSE WIDTH (t
) = 300 ns
1
DUTY CYCLE = 2%
10 AND 500
m
s
DUTY CYCLE = 2%
*
T
o
tal shunt capacitance of test jig and connectors.
Figure 4. t
off
Circuit
−
100 mA
Figure 3. t
off
Circuit
−
10 mA
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50
W
RISE TIME = 1 ns
TURN-ON WAVEFORMS
V
0
in
0.1
m
F
220
W
10%
90%
V
out
TURN-OFF WAVEFORMS
V
out
3.3 k
W
V
in
0
10%
90%
= +12 V
t
on
V
in
3.3 k
0.0023
m
F
50
W
0.0023
m
F
V
out
PULSE GENERATOR
ꢀV RISE
TIME < 1 ns
50
W
0.005
m
F 0.005
m
F
in
V
BB
ꢀSOURCE IMPEDANCE = 50
W
ꢀPW
≥
300 ns
ꢀDUTY CYCLE < 2%
+
–
+
V
CC
0.1
m
F 0.1
m
F
V
BB
= 3 V
V =
-15 V
in
–
t
off
Figure 5. Turn
−
On and Turn
−
Off Time Test Circuit
3
MMBT2369L, MMBT2369AL
6
5
100
LIMIT
TYPICAL
50
T =
25
°
C
J
β
= 10
F
V
CC
= 10 V
V
= 2 V
OB
4
3
C
t
f
ib
t (V
= 3 V)
CC
r
C
ob
20
10
5
V
= 10 V
CC
t
r
2
t
s
t
d
1
2
0.1
0.2
0.5
1.0
2.0
5.0
10
1
2
5
10
20
50
100
REVERSE BIAS (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Junction Capacitance Variations
Figure 7. Typical Switching Times
980
t
1
10 V
C < C
+6 V
OPT
C = 0
0
-4 V
C
C
OPT
< 1 ns
500
C * < 3 pF
s
PULSE WIDTH (t
) = 300 ns
1
DUTY CYCLE = 2%
TIME
Figure 8. Turn
−
Off Waveform
Figure 9. Storage Time Equivalent Test Circuit
1.0
0.8
T =
25
°
C
J
I =
3 mA
C
I =
10 mA
C
I =
30 mA
C
I =
50 mA
C
I =
100 mA
C
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
I ,
BASE CURRENT (mA)
B
Figure 10. Maximum Collector Saturation Voltage Characteristics
4
MMBT2369L, MMBT2369AL
200
100
50
T =
125
°
C
J
V
= 1 V
CE
75
°
C
25
°
C
T =
25
°
C and 75
°
C
J
-15
°
C
-55
°
C
20
1
2
5
10
I ,
COLLECTOR CURRENT (mA)
20
50
100
C
Figure 11. Minimum Current Gain Characteristics
1.4
1.2
1.0
0.8
β
= 10
T =
25
°
C
J
F
MAX V
MIN V
BE(sat)
BE(sat)
0.6
0.4
0.2
MAX V
CE(sat)
1
2
5
10
20
50
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 12. Saturation Voltage Limits
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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