onsemi-SMMBT5089LT1G
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MMBT5088L, MMBT5089L
Low Noise
T
r
ansistors
NPN Silicon
Features
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−23 (TO−236)
CASE 318
MAXIMUM RATINGS
STYLE 6
Rating
Symbol
Value
Unit
COLLECTOR
3
Collecto
r
−
E
mitter Voltage
MMBT5088L
V
CEO
V
CBO
V
EBO
Vdc
30
25
MMBT5089L
1
BASE
Collecto
r
−
B
ase Voltage
MMBT5088L
Vdc
35
30
MMBT5089L
2
EMITTER
Emitte
r
−
B
ase Voltage
4.5
50
Vdc
Collector Current − Continuous
I
C
mAdc
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1x M
G
T
o
tal Device Dissipation FR−5 Board,
P
D
G
225
1.8
mW
mW/
°
C
A
Derate above 25
°
C
1
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
1x =
Device Code
x = Q for MMBT5088L
SMMBT5088L
T
o
tal Device Dissipation Alumina
P
D
300
2.4
mW
mW/
°
C
A
x = R for MMBT5089L
SMMBT5089L
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
M
= Date Code*
G
= Pb−Free Package
T , T
J
−55 to +150
stg
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina
= 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT5088
L
T
1G,
SMMBT5088
L
T
1G
SOT−23
(Pb−Free)
3,000 /
T
a
pe &
Reel
NSVMMBT5088
L
T
3G SOT−23 10,000
/
T
a
pe &
(Pb−Free)
Reel
MMBT5089
L
T
1G,
SMMBT5089
L
T
1G
SOT−23
(Pb−Free)
3,000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 6
MMBT5088
L
T
1/D
MMBT5088L, MMBT5089L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
Vdc
(BR)CEO
(I =
1.0 mAdc, I
= 0)
MMBT5088L
MMBT5089L
30
25
−
−
C
B
Collecto
r
−
B
ase Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
Vdc
nAdc
nAdc
(BR)CBO
MMBT5088L
MMBT5089L
35
30
−
−
C
E
Collector Cutoff Current
(V =
20 Vdc, I
= 0)
I
CBO
MMBT5088L
MMBT5089L
−
−
50
50
CB
E
(V =
15 Vdc, I
= 0)
CB
E
Emitter Cutoff Current
I
EBO
(V
EB(off)
(V
EB(off)
= 3.0 Vdc, I
= 0)
MMBT5088L
MMBT5089L
−
−
50
100
C
= 4.5 Vdc, I
= 0)
C
ON CHARACTERISTICS
DC Current Gain
(I =
100
m
Adc, V
= 5.0 Vdc)
C
h
FE
−
MMBT5088L
MMBT5089L
300
400
900
1200
CE
(I =
1.0 mAdc, V
= 5.0 Vdc)
MMBT5088L
MMBT5089L
350
450
−
−
C
CE
(I =
10 mAdc, V
= 5.0 Vdc)
MMBT5088L
MMBT5089L
300
400
−
−
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.5
0.8
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain — Bandwidth Product
f
MHz
pF
pF
−
T
(I =
500
m
Adc, V
= 5.0 Vdc, f = 20 MHz)
50
−
−
C
CE
Collector−Base Capacitance
(V =
5.0 Vdc, I
= 0, f = 1.0 MHz emitter guarded)
C
C
h
cb
eb
fe
4.0
10
CB
E
Emitter−Base Capacitance
(V =
0.5 Vdc, I
= 0, f = 1.0 MHz collector guarded)
−
EB
C
Small Signal Current Gain
(I =
1.0 mAdc, V
= 5.0 Vdc, f = 1.0 kHz)
MMBT5088L
MMBT5089L
350
450
1400
1800
C
CE
Noise Figure
NF
dB
(I =
100
m
Adc, V
= 5.0 Vdc, R
= 10 k
W
, f = 1.0 kHz)
C
MMBT5088L
MMBT5089L
−
−
3.0
2.0
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
MMBT5088L, MMBT5089L
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
NOISE VOLTAGE
30
20
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
R
≈
0
20
I
C
= 10 mA
R
≈
0
S
S
f = 10 Hz
10 kHz
3.0 mA
1.0 mA
10
7.0
5.0
10
7.0
5.0
100 Hz
1.0 kHz
300
m
A
100 kHz
5.0
3.0
3.0
0.01 0.02
10 20
50 100
200 500
1ꢀk 2ꢀk
5ꢀk 10ꢀk
20ꢀk 50ꢀk
100ꢀk
f, FREQUENCY (Hz)
0.05 0.1
0.2
0.5 1.0
2.0
10
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. Effects of Frequency
Figure 3. Effects of Collector Current
10
20
16
BANDWIDTH = 1.0 Hz
7.0
5.0
I
C
= 10 mA
3.0
2.0
BANDWIDTH = 10 Hz to 15.7 kHz
3.0 mA
1.0 mA
12
8.0
4.0
0
1.0
0.7
0.5
I
C
= 1.0 mA
500
m
A
100
m
A
10
m
A
300
m
A
100
m
A
30
m
A
0.3
0.2
10
m
A
R
≈
0
S
0.1
10 20
50 100
200 500
1ꢀk 2ꢀk
5ꢀk 10ꢀk
20ꢀk 50ꢀk
100ꢀk
f, FREQUENCY (Hz)
10 20
50 100
200 500
1ꢀk 2ꢀk
5ꢀk 10ꢀk
20ꢀk 50ꢀk
100ꢀk
R ,
SOURCE RESISTANCE (OHMS)
S
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200
20
BANDWIDTH = 1.0 Hz
I =
10 mA
C
3.0 mA
16
12
I
C
= 10 mA
100
m
A
3.0 mA
1.0 mA
100
70
1.0 mA
50
30
20
300
m
A
300
m
A
8.0
30
m
A
100
m
A
30
m
A
10
10
m
A
4.0
0
7.0
5.0
10
m
A
BANDWIDTH = 1.0 Hz
10 20
50 100
200 500
1ꢀk 2ꢀk
5ꢀk 10ꢀk 20ꢀk 50ꢀk
100ꢀk
3.0
10 20
50 100
200 500
1ꢀk 2ꢀk
5ꢀk 10ꢀk 20ꢀk 50ꢀk
100ꢀk
R ,
SOURCE RESISTANCE (OHMS)
S
R ,
SOURCE RESISTANCE (OHMS)
S
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
3
MMBT5088L, MMBT5089L
4.0
3.0
V
CE
= 5.0 V
2.0
T =
125
°
C
A
25
°
C
1.0
0.7
-ꢁ55
°
C
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I ,
COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
-ꢁ0.4
-ꢁ0.8
T =
25
°
C
J
0.8
0.6
0.4
0.2
0
V
BE
@ V
= 5.0 V
CE
-ꢁ1.2
-ꢁ1.6
-ꢁ2.0
-ꢁ2.4
T =
25
°
C to 125
°
C
J
-ꢁ55
°
C to 25
°
C
V
@ I
/I =
10
C B
CE(sat)
0.01 0.02
0.05 0.1 0.2
1.0 2.0 5.0
0.01 0.02
0.05 0.1 0.2
1.0 2.0 5.0
0.5
10 20
50 100
0.5
10 20
50 100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 9. Temperature Coefficients
8.0
6.0
500
T =
25
°
C
J
300
200
C
ob
C
ib
4.0
3.0
C
eb
C
cb
2.0
100
V
= 5.0 V
CE
70
50
T =
25
°
C
J
1.0
0.8
0.1
0.2
1.0
2.0
5.0
1.0
2.0 3.0
5.0 7.0
0.5
10
20
50 100
10
20 30
50 70 100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 12. Capacitance
Figure 10. Current−Gain — Bandwidth Product
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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