onsemi-SMMBTA06LT1G
| Part # | onsemi-SMMBTA06LT1G |
| Download | onsemi-SMMBTA06LT1G |
MMBTA05L, MMBTA06L
Driver
T
r
ansistors
NPN Silicon
Features
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
EMITTER
Collecto
r
−
E
mitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBTA05L
MMBTA06L
60
80
3
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
Vdc
1
MMBTA05L
MMBTA06L
60
80
2
SOT−23
CASE 318
STYLE 6
4.0
Vdc
Collector Current − Continuous
Electrostatic Discharge
I
500
mAdc
C
ESD
HBM Class 3B
MM Class C
CDM Class IV
MARKING DIAGRAMS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1H M
G
1GM M
G
G
G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MMBTA05LT1
MMBTA06LT1,
SMMBTA06L
T
o
tal Device Dissipation FR
−
5
P
D
225
mW
Derate above 25
°
C
1H, 1GM
= Specific Device Code
A
1.8
mW/
°
C
°
C/W
M
G
= Date Code*
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
o
tal Device Dissipation Alumina
P
D
300
mW
A
Derate above 25
°
C
2.4
mW/
°
C
°
C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
Junction and Storage
T
e
mperature
T , T
−
5
5 to +150
°
C
J
stg
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 10
MMBTA05LT1/D
MMBTA05L, MMBTA06L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
(BR)CEO
(I =
1.0 mAdc, I
= 0)
MMBTA05L
MMBTA06L
60
80
−
−
C
B
Emitte
r
−
B
ase Breakdown Voltage
(I =
100
m
Adc, I
= 0)
V
4.0
−
Vdc
m
Adc
m
Adc
(BR)EBO
E
C
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
I
−
0.1
CES
CE
B
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
I
CBO
MMBTA05L
MMBTA06L
−
−
0.1
0.1
CB
E
(V =
80 Vdc, I
= 0)
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
10 mAdc, V
= 1.0 Vdc)
100
100
−
−
C
CE
(I =
100 mAdc, V
= 1.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
100 mAdc, I
= 10 mAdc)
V
−
0.25
Vdc
Vdc
CE(sat)
C
B
Bas
e
−
E
mitter On Voltage
(I =
100 mAdc, V
= 1.0 Vdc)
V
BE(on)
−
1.2
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
f
T
100
−
MHz
(I =
10 mA, V
= 2.0
V
, f =
1
00 MHz)
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. f is
defined as the frequency at which |h
| extrapolates to unity.
T
fe
TURN-ON TIME
TURN-OFF TIME
V
V
+V
CC
CC
-1.0 V
BB
+40 V
+40 V
5.0
m
s
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t =
3.0 ns
r
* C
t
6.0 pF
* C
t
6.0 pF
S
S
5.0
m
F
5.0
m
F
100
100
5.0
m
s
t =
3.0 ns
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors
For PNP
T
e
st Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
MMBTA05L, MMBTA06L
1000
100
10
100
T =
25
°
C
A
C
V
= 2.0 V
ibo
CE
T =
25
°
C
A
C
obo
10
1
0.1
1
10
100
1000
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (V)
R
Figure 2. Current Gain Bandwidth Product vs.
Collector Current
Figure 3. Capacitance
1000
100
10
1.0 k
700
500
T =
150
°
C
A
V
= 1.0 V
CE
t
s
T =
25
°
C
A
300
200
T =
−55
°
C
A
100
70
t
f
50
V
CC
I /I
= 10
= 40 V
30
20
t
C B
r
I =
I
B1 B2
t @
V
d
= 0.5 V
BE(off)
T =
25
°
C
J
10
0.1
1
10
100
1000
5.0 7.0 10
20 30
50 70 100
200 300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
Figure 5.
DC Current Gain vs. Collector
Current
1
1.2
1.1
I /I
= 10
I /I
= 10
C
B
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
T =
−55
°
C
A
T =
150
°
C
A
0.1
T =
25
°
C
A
T =
25
°
C
A
T =
150
°
C
A
T =
−55
°
C
A
0.3
0.2
0.1
0.01
0.1
1
10
100
1000
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
3
MMBTA05L, MMBTA06L
1.1
1
1.0
0.8
0.6
0.4
V
CE
= 1 V
T =
25
°
C
A
I
=
C
I
=
C
I
=
T =
−55
°
C
C
A
100 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50 mA
250 mA
I
C
=
500 mA
T =
25
°
C
A
I
C
=
10 mA
T =
150
°
C
A
0.2
0
0.1
1
10
100
1000
0.01
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 8. Base Emitter Turn−ON Voltage vs.
Collector Current
Figure 9. Saturation Region
−0.8
−1.2
−1.6
−2.0
10000
1000
100
10
MMBTA06L
10 ms
1 ms
100 ms
1 s
Thermal Limit
R
for V
BE
q
VB
−2.4
−2.8
Single Pulse at T
= 25
°
C
A
1
0.1
1
10
100
0.5 1.0
2.0
5.0
10 20
50
100 200
500
I ,
COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Base−Emitter Temperature
Coefficient
Figure 11. Safe Operating Area
10000
MMBTA05L
100 ms
10 ms
1000
100
1 ms
1 s
Thermal Limit
10
1
Single Pulse at T
= 25
°
C
A
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Safe Operating Area
4
MMBTA05L, MMBTA06L
ORDERING INFORMATION
Device
†
Package
Shipping
MMBTA05LT1G
SOT−23
(Pb−Free)
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
NSVMMBTA05LT1G*
MMBTA05LT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
MMBTA06LT1G
SOT−23
(Pb−Free)
SMMBTA06LT1G*
MMBTA06LT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SMMBTA06LT3G*
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
5
MMBTA05L, MMBTA06L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
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T
:
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T
o
ll Free
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o
ll Free USA/Canada
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o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
MMBTA05LT1/D
