onsemi-SMMBTA06LT1G

Part #onsemi-SMMBTA06LT1G
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onsemi-SMMBTA06LT1G
MMBTA05L, MMBTA06L  
Driver
T
r
ansistors  
NPN Silicon  
Features  
•
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
COLLECTOR  
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collecto
r
−
E
mitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MMBTA05L  
MMBTA06L  
60  
80  
3
Collecto
r
−
B
ase Voltage  
Emitte
r
−
B
ase Voltage  
Vdc  
1
MMBTA05L  
MMBTA06L  
60  
80  
2
SOT−23  
CASE 318  
STYLE 6  
4.0  
Vdc  
Collector Current − Continuous  
Electrostatic Discharge  
I
500  
mAdc  
C
ESD  
HBM Class 3B  
MM Class C  
CDM Class IV  
MARKING DIAGRAMS  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1H M
 
G  
1GM M
 
G  
G
G
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MMBTA05LT1  
MMBTA06LT1,  
SMMBTA06L  
T
o
tal Device Dissipation FR
−
5  
P
D
225  
mW  
Derate above 25
°
C  
1H, 1GM
 
= Specific Device Code  
A
1.8  
mW/
°
C  
°
C/W  
M
G
= Date Code*  
= Pb−Free Package  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
q
JA  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
T
o
tal Device Dissipation Alumina  
P
D
300  
mW  
A
Derate above 25
°
C  
2.4  
mW/
°
C  
°
C/W  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on

Thermal Resistance,  
Junction−to−Ambient  
R
417  
q
JA  
Junction and Storage
T
e
mperature  
T , T  
−
5
5 to +150  
°
C  
J
stg  
1. FR
−
5
 
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.  
2. Alumina
 
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 1994  
1
Publication Order Number:  
October, 2016 − Rev. 10  
MMBTA05LT1/D  
 

MMBTA05L, MMBTA06L  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collecto
r
−
E
mitter Breakdown V

V
Vdc  
(BR)CEO  
(I =
 
1.0 mAdc, I
 
= 0)  
MMBTA05L  
MMBTA06L  
60  
80  
−
−
C
B
Emitte
r
−
B
ase Breakdown Voltage  
(I =
 
100
m
Adc, I
 
= 0)  
V
4.0  
−
Vdc  
m
Adc  
m
Adc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V =
 
60 Vdc, I
 
= 0)  
I
−
0.1  
CES  
CE  
B
Collector Cutoff Current  
(V =
 
60 Vdc, I
 
= 0)  
I
CBO  
MMBTA05L  
MMBTA06L  
−
−
0.1  
0.1  
CB  
E
(V =
 
80 Vdc, I
 
= 0)  
CB  
E
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
−
(I =
 
10 mAdc, V
 
= 1.0 Vdc)  
100  
100  
−
−
C
CE  
(I =
 
100 mAdc, V
 
= 1.0 Vdc)  
C
CE  
Collecto
r
−
E
mitter Saturation Voltage  
(I =
 
100 mAdc, I
 
= 10 mAdc)  
V
−
0.25  
Vdc  
Vdc  
CE(sat)  
C
B
Bas
e
−
E
mitter On Voltage  
(I =
 
100 mAdc, V
 
= 1.0 Vdc)  
V
BE(on)  
−
1.2  
C
CE  
SMALL
−
S
IGNAL CHARACTERISTICS  
f
T
100  
−
MHz  
(I =
 
10 mA, V
 
= 2.0
V
, f =
1
00 MHz)  
C
CE  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Pulse
 
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.  
4. f is
 
defined as the frequency at which |h
 
| extrapolates to unity.  
T
fe  
TURN-ON TIME  
TURN-OFF TIME  
V
V
+V  
CC  
CC  
-1.0 V  
BB  
+40 V  
+40 V  
5.0
m
s  
100  
R
100  
R
L
L
OUTPUT  
OUTPUT  
+10 V  
0
V
in  
R
V
in  
R
B
B
t =
 
3.0 ns  
r
* C
 
t
6.0 pF  
* C
 
t
6.0 pF  
S
S
5.0
m
F  
5.0
m
F  
100  
100  
5.0
m
s  
t =
 
3.0 ns  
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors  
For PNP
T
e
st Circuits, Reverse All Voltage Polarities  
Figure 1. Switching Time Test Circuits  
2
 

MMBTA05L, MMBTA06L  
1000  
100  
10  
100  
T =
 
25
°
C  
A
C
V
= 2.0 V  
ibo  
CE  
T =
 
25
°
C  
A
C
obo  
10  
1
0.1  
1
10  
100  
1000  
1
10  
100  
I ,
 
COLLECTOR CURRENT (mA)  
C
V ,
 
REVERSE VOLTAGE (V)  
R
Figure 2. Current Gain Bandwidth Product vs.  
Collector Current  
Figure 3. Capacitance  
1000  
100  
10  
1.0 k  
700  
500  
T =
 
150
°
C  
A
V
= 1.0 V  
CE  
t
s
T =
 
25
°
C  
A
300  
200  
T =
 
−55
°
C  
A
100  
70  
t
f
50  
V
CC  
I /I
 
= 10  
= 40 V  
30  
20  
t
C B  
r
I =
 
I  
B1 B2  
t @
 
V  
d
= 0.5 V  
BE(off)  
T =
 
25
°
C  
J
10  
0.1  
1
10  
100  
1000  
5.0 7.0 10  
20 30  
50 70 100  
200 300  
500  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 4. Switching Time  
Figure 5.
 
DC Current Gain vs. Collector  
Current  
1
1.2  
1.1  
I /I
 
= 10  
I /I
 
= 10  
C
B
C
B
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
T =
 
−55
°
C  
A
T =
 
150
°
C  
A
0.1  
T =
 
25
°
C  
A
T =
 
25
°
C  
A
T =
 
150
°
C  
A
T =
 
−55
°
C  
A
0.3  
0.2  
0.1  
0.01  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 6. Collector Emitter Saturation Voltage  
vs. Collector Current  
Figure 7. Base Emitter Saturation Voltage vs.  
Collector Current  
3

MMBTA05L, MMBTA06L  
1.1  
1
1.0  
0.8  
0.6  
0.4  
V
CE  
= 1 V  
T =
 
25
°
C  
A
I
=
C
I
=
C
I
=
T =
 
−55
°
C  
C
A
100 mA  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
50 mA  
250 mA  
I
C
=
500 mA  
T =
 
25
°
C  
A
I
C
=
10 mA  
T =
 
150
°
C  
A
0.2  
0
0.1  
1
10  
100  
1000  
0.01  
0.1  
1
10  
100  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
BASE CURRENT (mA)  
B
Figure 8. Base Emitter Turn−ON Voltage vs.  
Collector Current  
Figure 9. Saturation Region  
−0.8  
−1.2  
−1.6  
−2.0  
10000  
1000  
100  
10  
MMBTA06L  
10 ms  
1 ms  
100 ms  
1 s  
Thermal Limit  
R
for V  
BE  
q
VB  
−2.4  
−2.8  
Single Pulse at T
 
= 25
°
C  
A
1
0.1  
1
10  
100  
0.5 1.0
 
2.0  
5.0  
10 20  
50  
100 200  
500  
I ,
 
COLLECTOR CURRENT (mA)  
C
V
CE  
, COLLECTOR EMITTER VOLTAGE (V)  
Figure 10. Base−Emitter Temperature  
Coefficient  
Figure 11. Safe Operating Area  
10000  
MMBTA05L  
100 ms  
10 ms  
1000  
100  
1 ms  
1 s  
Thermal Limit  
10  
1
Single Pulse at T
 
= 25
°
C  
A
0.1  
1
10  
100  
V
CE  
, COLLECTOR EMITTER VOLTAGE (V)  
Figure 12. Safe Operating Area  
4

MMBTA05L, MMBTA06L  
ORDERING INFORMATION  
Device  
†
Package  
Shipping  
MMBTA05LT1G  
SOT−23  
(Pb−Free)  
3,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
3,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
10,000 /
T
a
pe & Reel  
NSVMMBTA05LT1G*  
MMBTA05LT3G  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
MMBTA06LT1G  
SOT−23  
(Pb−Free)  
SMMBTA06LT1G*  
MMBTA06LT3G  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
SMMBTA06LT3G*  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable.  
5

MMBTA05L, MMBTA06L  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING
 
AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING
 
DIMENSION: MILLIMETERS.  
3. MAXIMUM
 
LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS
 
D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0
°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0
°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10
°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10
°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
A
H
E
T
c
A1  
STYLE 6:  
SEE VIEW C  
SIDE VIEW  
PIN 1.
 
BASE  
2. EMITTER  
3. COLLECTOR  
END VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
2.90  
0.90  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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T
:  
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T
o
ll Free  
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o
ll Free USA/Canada  
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o
ll Free USA/Canada  
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◊
MMBTA05LT1/D