onsemi-SMMBTA06WT1G

Part #onsemi-SMMBTA06WT1G
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onsemi-SMMBTA06WT1G
MMBTA06W, SMMBTA06W,  
Driver
T
r
ansistor  
NPN Silicon  
Features  
•
Moisture Sensitivity Level: 1  
•
ESD Rating:  
♦
Human Body Model − 4 kV  
♦
Machine Model − 400 V  
•
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
P
P
A
P Capable  
SC−70  
CASE 419  
STYLE 3  
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
MAXIMUM RATINGS  
COLLECTOR  
3
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
V
CEO  
V
CBO  
80  
Vdc  
1
BASE  
Emitter−Base Voltage  
V
EBO  
4.0  
Vdc  
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
500  
mAdc  
2
C
EMITTER  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
T
o
tal Device Dissipation FR−5 Board  
P
D
mW  
T =
 
25
°
C  
A
460  
GM M
G  
Thermal Resistance, Junction to Ambient  
R
°
C/W  
°
C  
q
JA  
G
272  
1
Junction and Storage
T
e
mperature  
T , T  
J
−55 to +150  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
GM  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
2
1. FR−4
 
Board, 1 oz. Cu, 100 mm
 
.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending upon  
manufacturin
g
l
ocation.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MMB
T
A
06WT1G  
SC−70  
3,000 /  
(Pb−Free)  
T
a
pe & Reel  
SMMB
T
A
06WT1G  
SMMB
T
A
06WT3G  
SC−70  
(Pb−Free)  
3,000 /  
T
a
pe & Reel  
SC−70  
10,000 /  
(Pb−Free)  
T
a
pe & Reel  
†
For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our
T
a
pe and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloa
d
t
he ON Semiconductor Soldering and Mounting
T
e
chniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
Septembe
r
,
2
018 − Rev. 5  
MMB
T
A
06WT1/D  
 

MMBTA06W, SMMBTA06W,  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Breakdown V

(I =
 
1.0 mAdc, I
 
= 0)  
V
Vdc  
Vdc  
(BR)CEO  
80  
4.0  
−
−
C
B
Emitter−Base Breakdown Voltage  
(I =
 
100
m
Adc, I
 
= 0)  
V
(BR)EBO  
−
E
C
Collector Cutoff Current  
(V =
 
60 Vdc, I
 
= 0)  
I
m
Adc  
m
Adc  
CES  
0.1  
0.1  
CE  
B
Collector Cutoff Current  
(V =
 
80 Vdc, I
 
= 0)  
I
CBO  
−
CB  
E
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
−
(I =
 
10 mAdc, V
 
= 1.0 Vdc)  
100  
100  
−
−
C
CE  
(I =
 
100 mAdc, V
 
= 1.0 Vdc)  
C
CE  
Collector−Emitter Saturation Voltage  
(I =
 
100 mAdc, I
 
= 10 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
−
−
0.25  
1.2  
C
B
Base−Emitter On Voltage  
(I =
 
100 mAdc, V
 
= 1.0 Vdc)  
V
BE(on)  
C
CE  
SMALL
−
S
IGNAL CHARACTERISTICS  
f
T
MHz  
(I =
 
10 mA, V
 
= 2.0
V
, f = 100 MHz)  
100  
−
C
CE  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performanc
e
m
ay not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pulse
 
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.  
2. f is
 
defined as the frequency at which |h
 
| extrapolates to unity.  
T
fe  
TURN-ON TIME  
TURN-OFF TIME  
V
V
+V  
BB  
CC  
CC  
-1.0 V  
+40 V  
+40 V  
5.0
m
s  
100  
R
100  
R
L
L
OUTPUT  
OUTPUT  
+10 V  
0
V
in  
R
V
in  
R
B
B
t =
 
3.0 ns  
r
* C
 
t
6.0 pF  
S
* C
 
t
6.0 pF  
S
5.0
m
F  
5.0
m
F  
100  
100  
5.0
m
s  
t =
 
3.0 ns  
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors  
For PNP
T
e
st Circuits, Reverse All Voltage Polarities  
Figure 1. Switching Time Test Circuits  
2
 

MMBTA06W, SMMBTA06W,  
300  
200  
80  
60  
T =
 
25
°
C  
J
V
= 2.0 V  
CE  
T =
 
25
°
C  
J
40  
C
ibo  
20  
100  
70  
10  
8.0  
50  
C
6.0  
obo  
30  
4.0  
2.0 3.0  
5.0 7.0
 
10  
20 30  
50 70
 
100  
200  
0.1 0.2  
0.5 1.0 2.0  
5.0  
10  
20  
50 100  
I ,
 
COLLECTOR CURRENT (mA)  
C
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Current−Gain — Bandwidth Product  
Figure 3. Capacitance  
1.0 k  
1.0 k  
700  
100
m
s  
700  
500  
1.0 ms  
500  
t
s
300  
200  
300  
200  
1.0 s  
T
= 25
°
C  
C
T =
 
25
°
C  
A
100  
70  
100  
70  
t
f
50  
50  
CURRENT LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
V
= 40 V  
CC  
30  
20  
30  
20  
I /I
 
= 10  
C
t
B
= I  
r
I
B1 B2  
t @
 
V  
d
= 0.5 V  
BE(off)  
T =
 
25
°
C  
J
10  
10  
5.0 7.0 10  
20 30  
50 70 100  
1.0  
2.0 3.0  
5.0 7.0
 
10  
20 30  
50 70 100  
200 300  
500  
I ,
 
COLLECTOR CURRENT (mA)  
C
V
CE  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 4. Switching Time  
Figure 5. Active−Region Safe Operating Area  
400  
200  
1.0  
0.8  
0.6  
0.4  
T =
 
25
°
C  
J
T =
 
125
°
C  
J
V
CE  
= 1.0 V  
V
@ I
 
/I =
 
10  
C B  
BE(sat)  
25
°
C  
V
BE(on)  
@ V
 
= 1.0 V  
CE  
-55
°
C  
100  
80  
0.2  
0
60  
V
@ I
 
/I =
 
10  
C B  
CE(sat)  
40  
0.5 1.0
 
2.0 3.0
 
5.0 10  
20 30
 
50 100
 
200 300 500  
0.5  
1.0 2.0  
5.0  
10  
20  
50  
100 200  
500  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 6. DC Current Gain  
Figure 7. “ON” Voltages  
3

MMBTA06W, SMMBTA06W,  
1.0  
0.8  
0.6  
-0.8  
T =
 
25
°
C  
J
-1.2  
I
=
I
=
I
=
I =  
C
C
C
C
250 mA  
100 mA  
50 mA  
500 mA  
-1.6  
-2.0  
R
for V  
BE  
q
VB  
0.4  
0.2  
0
I
=
C
10 mA  
-2.4  
-2.8  
0.05 0.1
 
0.2  
0.5  
1.0 2.0  
5.0  
10  
20  
0.5  
1.0 2.0  
5.0  
10  
20  
50  
100 200  
500  
50  
I ,
 
BASE CURRENT (mA)  
B
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 8. Collector Saturation Region  
Figure 9. Base−Emitter Temperature  
Coefficient  
4

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SC
−
70 (SOT
−
323)  
CASE 419  
ISSUE R  
DATE 11 OCT 2022  
SCALE 4:1  
GENERIC  
MARKING DIAGRAM  
XX M
G  
G
1
XX  
M
G
= Specific Device Code  
= Date Code  
= Pb
−
Free Package  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb
−
Free indicator, “G” or microdot “
G
”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
STYLE 1:  
STYLE 2:  
PIN 1.
 
ANODE  
2. N.C.  
3. CATHODE  
STYLE 3:  
PIN 1.
 
BASE  
2. EMITTER  
3. COLLECTOR  
STYLE 4:  
STYLE 5:  
PIN 1.
 
ANODE  
2. ANODE  
3. CATHODE  
CANCELLED  
PIN 1.
 
CATHODE  
2. CATHODE  
3. ANODE  
STYLE 6:  
STYLE 7:  
PIN 1.
 
BASE  
STYLE 8:  
PIN 1.
 
GATE  
2. SOURCE  
3. DRAIN  
STYLE 9:  
STYLE 10:  
STYLE 11:  
PIN 1.
 
EMITTER  
PIN 1.
 
ANODE  
PIN 1.
 
CATHODE  
2. ANODE  
PIN 1.
 
CATHODE  
2. CATHODE  
2. BASE  
2. EMITTER  
2. CATHODE  
3. COLLECTOR  
3. COLLECTOR  
3. CATHODE-ANODE  
3. ANODE-CATHODE  
3. CATHODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions
 
are uncontrolled
 
except when stamped
 
“CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42819B  
SC
−
70 (SOT
−
323)  
PAGE 1 OF 1  
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and  
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves  
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.  
©
Semiconductor Components Industries, LLC, 2019  

onsemi
,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates  
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owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of
onsemi
’s product/patent coverage may be accessed at

.
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reserves the right to make changes at any time to any  
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−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use  
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and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license  
under any of its intellectual property rights nor the rights of others.
onsemi
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was negligent regarding the design or manufacture of the part.
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is an Equal  
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PUBLICATION ORDERING INFORMATION  
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T
:  
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−
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−
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o
ll Free USA/Canada  
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