onsemi-SMMBTA56WT3G

Part #onsemi-SMMBTA56WT3G
Download 
onsemi-SMMBTA56WT3G
ON Semiconductor  
Is Now  
To learn more about onsemi™, please visit our website at  
onsemi
andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or  
subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
onsemi  

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf.

onsemi
reserves the right to make changes at any time to any products or information herein, without  
notice. The information herein is provided “as-is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,  
or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
 
onsemi
products, including compliance with all laws,  
regulations and safety requirements or standards, regardless of any support or applications information provided by
 
onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/  
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for  
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
 
onsemi
is an Equal Opportunity/Affirmative  
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  

MMBTA56W, SMMBTA56W  
Driver
T
r
ansistor  
PNP Silicon  
Features  
•
Moisture Sensitivity Level: 1  
•
ESD Rating:  
♦
Human Body Model − 4 kV  
♦
Machine Model − 400 V  
•
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
P
P
A
P Capable  
SC−70 (SOT−323)  
CASE 419  
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
STYLE 3  
Compliant*  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Symbol  
Value  
−80  
Unit  
Vdc  
Vdc  
1
V
CEO  
CBO  
BASE  
V
−80  
2
Emitter−Base Voltage  
V
EBO  
−4.0  
Vdc  
EMITTER  
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
I
C
−500  
mAdc  
MARKING DIAGRAM  
Characteristic  
Symbol  
Max  
Unit  
T
o
tal Device Dissipation FR−5 Board  
T =
 
25
°
C  
A
P
mW  
D
FM M
G  
460  
272  
G
Thermal Resistance, Junction to Ambient  
R
q
°
C/W  
°
C  
JA  
1
FM =
 
Device Code  
Junction and Storage
T
e
mperature  
T , T  
J
−55 to +150  
stg  
M
G
= Date Code*  
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
(Note: Microdot may be in either location)  
2
1. FR−4
 
Board, 1 oz. Cu, 100 mm
 
.  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MMB
T
A
56WT1G  
SC−70  
3,000 /  
(Pb−Free)  
T
a
pe & Reel  
SMMB
T
A
56WT1G  
SMMB
T
A
56WT3G  
SC−70  
(Pb−Free)  
3,000 /  
T
a
pe & Reel  
SC−70  
10,000 /  
(Pb−Free)  
T
a
pe & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our
T
a
pe and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloa
d
t
he ON Semiconductor Soldering and Mounting
T
e
chniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
Septembe
r
,
2
018 − Rev. 5  
MMB
T
A
56WT1/D  
 

MMBTA56W, SMMBTA56W  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Breakdown V

V
Vdc  
Vdc  
(BR)CEO  
(I =
 
−1.0 mAdc, I
 
= 0)  
−80  
−4.0  
−
−
−
C
B
Emitter−Base Breakdown Voltage  
(I =
 
−100
m
Adc, I
 
= 0)  
V
(BR)EBO  
E
C
Collector Cutoff Current  
(V =
 
−60 Vdc, I
 
= 0)  
I
m
Adc  
m
Adc  
CES  
−0.1  
CE  
B
Collector Cutoff Current  
(V =
 
−60 Vdc, I
 
= 0)  
I
CBO  
−
−
−
−0.1  
CB  
E
(V =
 
−80 Vdc, I
 
= 0)  
CB  
E
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
−
(I =
 
−10 mAdc, V
 
= −1.0 Vdc)  
100  
100  
−
−
C
CE  
CE  
(I =
 
−100 mAdc, V
 
= −1.0 Vdc)  
C
Collector−Emitter Saturation Voltage  
(I =
 
−100 mAdc, I
 
= −10 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
−
−
−0.25  
−1.2  
C
B
Base−Emitter On Voltage  
(I =
 
−100 mAdc, V
 
= −1.0 Vdc)  
V
BE(on)  
C
CE  
SMALL
−
S
IGNAL CHARACTERISTICS  
f
T
MHz  
(I =
 
−100 mAdc, V
 
= −1.0 Vdc, f = 100 MHz)  
50  
−
C
CE  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performanc
e
m
ay not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pulse
 
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.  
2. f is
 
defined as the frequency at which |h
 
| extrapolates to unity.  
T
fe  
TURN-ON TIME  
TURN-OFF TIME  
V
V
+V  
BB  
CC  
CC  
-1.0 V  
+40 V  
+40 V  
5.0
m
s  
100  
R
100  
R
L
L
OUTPUT  
OUTPUT  
+10 V  
0
V
in  
R
V
in  
R
B
B
t =
 
3.0 ns  
r
* C
 
t
6.0 pF  
S
* C
 
t
6.0 pF  
S
5.0
m
F  
5.0
m
F  
100  
100  
5.0
m
s  
t =
 
3.0 ns  
r
*
T
o
tal Shunt Capacitance of
T
e
st Jig and Connectors  
For PNP
T
e
st Circuits, Reverse All Voltage Polarities  
Figure 1. Switching Time Test Circuits  
2
 

MMBTA56W, SMMBTA56W  
200  
100  
70  
T =
 
25
°
C  
J
V
= -2.0 V  
CE  
T =
 
25
°
C  
J
50  
C
ibo  
100  
70  
30  
20  
50  
C
10  
obo  
30  
20  
7.0  
5.0  
-0.1 -0.2  
-2.0 -3.0
 
-5.0 -7.0
 
-10  
-20 -30
 
-50 -70 -100  
-200  
-0.5 -1.0 -2.0  
-5.0 -10 -20  
-50 -100  
I ,
 
COLLECTOR CURRENT (mA)  
C
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
Figure 2. Current−Gain — Bandwidth Product  
Figure 3. Capacitance  
1.0 k  
700  
-1.0 k  
100
m
s  
1.0 ms  
-700  
-500  
500  
t
s
300  
200  
-300  
-200  
1.0 s  
T =
 
25
°
C  
C
T =
 
25
°
C  
A
100  
70  
-100  
-70  
t
f
50  
-50  
CURRENT LIMIT  
V
= -40 V  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
CC  
30  
20  
-30  
-20  
I /I
 
= 10  
C B  
I
= I  
B1 B2  
t
t @
 
V  
d
= -0.5 V  
r
BE(off)  
T =
 
25
°
C  
J
10  
-10  
-5.0 -7.0 -10  
-20 -30  
-50 -70 -100  
-200 -300
 
-500  
-1.0  
-2.0 -3.0
 
-5.0 -7.0 -10  
-20 -30
 
-50 -70
 
-100  
I ,
 
COLLECTOR CURRENT (mA)  
C
V
CE  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 4. Switching Time  
Figure 5. Active−Region Safe Operating Area  
400  
-1.0  
-0.8  
-0.6  
-0.4  
T =
 
25
°
C  
J
T =
 
125
°
C  
J
V
CE  
= -1.0 V  
V
@ I
 
/I =
 
10  
C B  
BE(sat)  
200  
25
°
C  
V
BE(on)  
@ V
 
= -1.0 V  
CE  
-55
°
C  
100  
80  
-0.2  
0
60  
V
@ I
 
/I =
 
10  
C B  
CE(sat)  
40  
-0.5 -1.0 -2.0  
-5.0 -10
 
-20  
-50 -100
 
-200  
-500  
-0.5 -1.0
 
-2.0  
-5.0 -10 -20  
-50 -100
 
-200 -500  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 6. DC Current Gain  
Figure 7. “ON” Voltages  
3

MMBTA56W, SMMBTA56W  
-0.8  
-1.0  
-0.8  
-0.6  
-0.4  
T =
 
25
°
C  
J
-1.2  
I =  
C
I =  
C
I =  
C
I =  
C
-250 mA  
-100 mA  
-50 mA  
-500 mA  
-1.6  
R
for V  
BE  
q
VB  
-2.0  
I =  
C
-10 mA  
-2.4  
-2.8  
-0.2  
0
-0.5 -1.0 -2.0  
-5.0 -10
 
-20  
-50 -100
 
-200 -500  
-0.05 -0.1
 
-0.2  
-0.5 -1.0 -2.0
 
-5.0 -10
 
-20  
-50  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
BASE CURRENT (mA)  
B
Figure 9. Base−Emitter Temperature  
Coefficient  
Figure 8. Collector Saturation Region  
4

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SC
−
70 (SOT
−
323)  
CASE 419
−
04  
ISSUE N  
DATE 11 NOV 2008  
SCALE 4:1  
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING
 
DIMENSION: INCH.  
D
e1  
MILLIMETERS  
INCHES  
DIM  
A
A1  
A2  
b
c
D
E
e
e1  
L
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
0.70 REF  
0.35  
0.18  
2.10  
1.24  
1.30  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
MAX  
0.040  
0.004  
3
E
H
E
1
2
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
0.65 BSC  
0.38  
2.10  
0.026 BSC  
0.015  
0.083  
0.20  
2.00  
0.56  
2.40  
0.008  
0.079  
0.022  
0.095  
H
E
c
A
A2  
GENERIC  
MARKING DIAGRAM  
0.05 (0.002)  
L
A1  
XX M
G  
SOLDERING FOOTPRINT*  
G
0.65  
1
0.025  
0.65  
0.025  
XX  
M
= Specific Device Code  
= Date Code  
G
= Pb
−
Free Package  
1.9  
0.075  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb
−
Free indicator, “G” or microdot “
G
”,  
may or may not be present.  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb
−
Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
STYLE 1:  
STYLE 2:  
PIN 1.
 
ANODE  
2. N.C.  
STYLE 3:  
PIN 1.
 
BASE  
2. EMITTER  
3. COLLECTOR  
STYLE 4:  
STYLE 5:  
CANCELLED  
PIN 1.
 
CATHODE  
2. CATHODE  
3. ANODE  
PIN 1.
 
ANODE  
2. ANODE  
3. CATHODE  
3. CATHODE  
STYLE 6:  
STYLE 7:  
PIN 1.
 
BASE  
STYLE 8:  
PIN 1.
 
GATE  
STYLE 9:  
STYLE 10:  
PIN 1.
 
CATHODE  
2. ANODE  
STYLE 11:  
PIN 1.
 
CATHODE  
PIN 1.
 
EMITTER  
2. BASE  
3. COLLECTOR  
PIN 1.
 
ANODE  
2. CATHODE  
3. CATHODE-ANODE  
2. EMITTER  
3. COLLECTOR  
2. SOURCE  
3. DRAIN  
2. CATHODE  
3. CATHODE  
3. ANODE-CATHODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions
 
are uncontrolled
 
except when stamped
 
“CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42819B  
SC
−
70 (SOT
−
323)  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
©
Semiconductor Components Industries, LLC, 2019  

ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at

. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMEN
T
:  
Email Requests to:

TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
Phone: 00421 33 790 2910  
For additional information, please contact your local Sales Representative  
ON Semiconductor Website:

◊