onsemi-SMP3003-DL-1E

Order

i

n

g number : EN

A

1

655D  

SMP3003  

P-Channel Power MOSFET  

–

–

Ω

75V, 100A,

 

8.0m ,

 

TO-263-2L/TO-263  

F

e

atures  

TO-263  

•

•

ON-resistance R

 

(on)1=6.2m (typ.)  

DS  

Input capacitance

 

Ciss=13400pF (typ.)  

4V drive  

Ω

•

Spec

i

fi

c

at

i

o

ns  

at Ta=25°C  

A

b

so

l

u

te Maximum Rat

i

n

gs  

Pa

r

a

meter  

Dr

a

i

n

t

o Source

V

o

l

t

age  

Gate to Source

V

o

l

t

age  

Dr

a

i

n

C

urrent

(

D

C

)  

S

y

mbol  

Cond

i

t

i

o

ns  

Rat

i

n

gs  

Unit  

V

V

–

–

75  

±20  

–

–

100  

–

–

400  

90  

D

S

S  

V

V

GSS  

I

A

D

Dr

a

i

n

C

urrent

(

P

u

l

s

e)  

I

PW 10 s,

 

duty cyc

l

e

 

1

%  

A

≤

μ

≤

DP  

All

o

wab

l

e

P

ower

D

i

s

s

i

p

at

i

o

n  

Channel

T

e

mperature  

P

T

c

=25

°C  

W

°C  

°C  

mJ  

A

D

T

c

h  

150  

Storage

T

e

mperature  

T

s

tg  

–

–

55 to +150  

468  

A

v

a

l

a

nche Ene

r

g

y

(

S

i

n

g

l

e

P

u

l

s

e)

*

1  

A

v

a

l

a

nche Current

*

2  

E

AS  

I

–

–

60  

AV  

Note :

 

1 V

 

=

–

-48

V

,

L

=100

 

H, I

 

=

–

-60A (Fig.1)  

*

μ

DD  

2 L

 

100 H,

 

Single pulse  

AV  

*

≤

μ

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  

at Ta=25°C  

El

e

ctr

i

c

al Character

i

s

t

i

c

s  

Rat

i

n

gs  

typ  

Pa

r

a

meter  

S

y

mbol  

Cond

i

t

i

o

ns  

Unit  

V

m

i

n  

–

–

75  

max  

Dr

a

i

n

t

o Source Breakdown

V

o

l

t

age  

Z

e

r

o

-Gate

V

o

l

t

age Dra

i

n

C

urrent  

Gate to Source

L

e

akage Current  

Cuto

f

f

V

o

l

t

age  

V

I =

–

–

1m

A

,

 

V

=

0V  

D GS  

(

B

R

)

D

S

S  

I

V

=

–

–

75

V

, V

 

=

0V  

–

–

10  

A

A

μ

D

S

S  

DS GS  

I

V

=±16

V

, V

 

=

0V  

±10  

μ

GSS  

GS DS  

V

(

o

f

f)  

|

V

=

–

–

10

V

, I

 

=

–

–

1mA  

–

–

1.2  

–

–

2.6  

V

GS  

yfs  

DS D  

Forward

T

r

a

ns

f

e

r

A

d

m

i

t

tance  

V

I

=

–

–

10

V

, I

 

=

–

–

50A  

D

140  

6.2  

S

|

DS  

R

R

(

o

n

)

1  

(

o

n

)

2  

=

–

–

50

A

, V

 

=

–

–

10V  

GS  

8.0  

11  

m

Ω

Ω

DS  

DS  

D

Stat

i

c Dr

a

i

n

t

o Source On-State Res

i

s

tance  

I

D

=

–

–

50

A

, V

 

=

–

–

4V  

GS  

8.0  

m

I

n

put Capac

i

t

ance  

C

i

s

s  

13400  

1000  

740  

95  

pF  

Output Capac

i

t

ance  

Reverse

T

r

a

ns

f

e

r Capac

i

t

ance  

T

u

rn-ON De

l

a

y

T

i

m

e  

Ri

s

e

T

i

m

e  

Coss  

Crss  

V

=

–

–

20

V

,

f

=1MHz  

pF  

pF  

ns  

DS  

t

t

t

t

(

o

n)  

d

r

1000  

800  

820  

280  

50  

ns  

See F

i

g

.2  

T

u

rn-OFF De

l

a

y

T

i

m

e  

Fa

l

l Ti

m

e  

(

o

f

f)  

ns  

d

f

ns  

T

o

tal Gate Cha

r

g

e  

Qg  

nC  

nC  

nC  

V

Gate to Source Charge  

Gate to Dra

i

n “Mill

e

r

” Charge  

Di

o

de Forward

V

o

l

t

age  

Reverse Recovery T

i

m

e  

Reverse Recovery Charge  

Qgs  

Qgd  

V

DS  

=

–

–

48

V

, V

 

=

–

–

10

V

, I

 

=

–

–

100A  

GS  

D

55  

V

SD  

I =

–

–

100

A

,

 

V

=

0V  

S

–

–

1.0  

120  

380  

–

–

1.5  

GS  

t

ns  

See F

i

g

.3  

rr  

I =

–

–

100

A

,

 

V

=

0

V

,

 

d

i

/

dt=

–

–

100

A

/  

S

s

Q

μ

nC  

GS  

rr  

ORDERING INFORMATION  

See detailed ordering and shipping information on page 6 of this data sheet.  

Semiconductor Components Industries, LLC, 2013  

September, 2013  

91113 TKIM TC-00002966/O2412 TKIM/53012 TKIM TC-00002772/

 

No. A1655-1/6  

O1211 TKIM TC-00002654/21710QA TKIM TC-00002253  

SMP3003  

I

D

— V  

DS  

I

— V  

D GS  

–

–

200  

–

–

180  

–

–

160  

–

–

140  

–

–

120  

–

–

100  

–

–

80  

–

–

200  

–

–

180  

–

–

160  

–

–

140  

–

–

120  

–

–

100  

–

–

80  

Tc=25

°

C  

V

DS  

=

–

–

10V  

–

–

60  

–

–

60  

–

–

40  

–

–

40  

–

–

20  

0

–

–

20  

0

0

–

–

0.2

–

–

0.4

–

–

0.6

–

–

0.8

–

–

1.0

–

–

1.2

–

–

1.4

–

–

1.6

–

–

1.8

–

–

2.0  

IT16499  

0

–

–

0.5

–

–

1.0

–

–

1.5

–

–

2.0

–

–

2.5

–

–

3.0

–

–

3.5

–

–

4.0

–

–

4.5

–

–

5.0  

IT16500  

Drain to Source

V

o

ltage, V  

DS  

— V  

Gate to Source

V

o

ltage, V

 

–

– V  

GS  

R

(

o

n)

–

– V  

R

(

o

n)

–

–

T

c  

DS  

GS  

DS  

20  

18  

16  

14  

12  

10  

8

20  

18  

16  

14  

12  

10  

8

I =

 

–

–

50A  

Single pulse  

Single pulse  

D

6

6

4

4

2

0

2

0

–

–

50  

–

–

25  

0

25  

50  

75  

100  

125  

150  

0

–

–

1  

–

–

2  

–

–

3  

–

–

4  

–

–

5  

–

–

6  

–

–

7  

–

–

8  

–

–

9  

–

–

10  

Gate to Source

V

o

ltage, V  

— V  

IT16501  

Case Temperature, Tc

 

–

–

°

C  

IT16502  

GS  

|

y

fs

|

— I  

I

— V  

D

S

S

D  

–

–

1000  

1000  

7

V

=0V  

V

=

–

–

10V  

7

5

GS  

Single pulse  

DS  

5

3

2

3

2

–

–

100  

7

100  

7

5

5

3

2

3

2

–

–

10  

7

5

10  

7

3

2

5

–

–

1.0  

3

2

7

5

3

2

1.0  

7

5

–

–

0.1  

7

5

3

2

3

2

–

–

0.01  

0.1  

–

–

0.1  

2

3

5

7

2

3

5

7

2

3

5

7

–

–

100  

0

–

–

0.2  

–

–

0.4  

–

–

0.6  

–

–

0.8  

–

–

1.0  

–

–

1.2  

–

–

1.4  

IT17198  

–

–

1.0  

–

–

10  

Drain Current, I

 

–

– A  

IT16503  

Diode Forward

V

o

ltage, V  

SD  

— V  

D

SW

T

i

m

e

 

–

– I  

C

i

s

s, Coss, Crss

–

– V  

DS  

D

5

100000  

f=1MHz  

V

V

=

–

–

48V  

=

–

–

10V  

DD  

GS  

7

5

3

2

3

2

10000  

1000  

7

5

7

5

t

f

3

2

3

2

1000  

7

5

3

2

100  

t (on)  

d

7

5

100  

2

3

5

7

2

3

5

7

2

3

5

7

0

–

–

5  

–

–

10  

–

–

15  

–

–

20  

–

–

25  

–

–

30  

IT16505  

–

–

0.1  

–

–

1.0  

–

–

10  

–

–

100  

Drain Current, I

 

–

– A  

IT14179  

Drain to Source

V

o

ltage, V  

DS  

— V  

D

No. A1655-2/6  

SMP3003  

V

GS  

—

Q

g  

A S

 

O  

–

–

1000  

–

–

10  

–

–

9  

–

–

8  

–

–

7  

–

–

6  

–

–

5  

–

–

4  

–

–

3  

–

–

2  

7

V

=

–

–

48V  

=

–

–

100A  

DS  

I

=

–

–

400A(PW

≤

10

μ

s)  

DP  

5

I

D

3

2

I

=

–

–

100A  

D

–

–

100  

7

5

3

2

–

–

10  

7

5

Operation in  

this area is  

limited by R

 

(on).  

3

2

DS  

–

–

1.0  

7

5

3

2

–

–

1  

0

Tc=25

°

C  

Single pulse  

–

–

0.1  

–

–

0.1  

2

3

5

7

2

3

5

7

2

3

5

7

2

0

50  

100  

150  

200  

250  

300  

350  

IT16506  

–

–

1.0  

–

–

10  

–

–

100  

IT15360  

Drain to Source

V

o

ltage, V  

— V  

Total Gate Charge, Qg

 

–

–

n

C  

DS  

P

—

T

c  

E

—

T

a  

D

AS  

100  

90  

80  

70  

60  

50  

40  

30  

20  

120  

100  

80  

60  

40  

20  

0

10  

0

0

20  

40  

60  

80  

100  

120  

140  

160  

0

25  

50  

75  

100  

125  

150  

175  

IT14184  

IT15361  

Ambient Temperature, Ta

 

–

–

°

C  

Case Temperature, Tc

 

–

–

°

C  

No. A1655-3/6  

SMP3003  

Package

D

i

m

ens

i

o

ns  

SMP3003-DL-1E  

D2PAK/TO-263-2L  

C

A

S

E 418

A

P  

I

S

S

U

E O  

Unit : mm  

1: Gate  

2: Drain  

3: Source  

4: Drain  

L

a

nd Pattern Examp

l

e  

Pack

i

n

g

T

y

p

e:

D

L  

El

e

ctr

i

c

al Connect

i

o

n  

2, 4  

DL  

1

3

No. A1655-4/6  

SMP3003  

Package

D

i

m

ens

i

o

ns  

SMP3003-TL-1E  

Unit : mm  

1: Gate  

2: Drain  

3: Source  

4: Drain  

L

a

nd Pattern Examp

l

e  

Pack

i

n

g

T

y

p

e:

T

L  

El

e

ctr

i

c

al Connect

i

o

n  

2, 4  

TL  

1

3

No. A1655-5/6  

SMP3003  

Order

i

n

g &

 

Package

I

n

f

o

rmat

i

o

n  

M

a

rk

i

n

g  

D

e

v

i

c

e  

Package  

Sh

i

p

p

i

n

g  

memo  

TO-263-2L  

SC-83,

T

O-263  

M

P

3003  

S

M

P

3003-D

L

–

1E  

800  

pcs./

r

e

el  

Pb-Free  

L

O

T No.  

S

M

P

3003-

T

L

–

1E  

TO-263  

Fi

g

.1 Unc

l

a

mped

I

n

duct

i

ve

S

w

i

t

ch

i

n

g

T

e

st C

i

r

c

u

i

t  

Fi

g

.2 Sw

i

t

ch

i

n

g

T

i

m

e

T

e

st C

i

r

c

u

i

t  

V =

 

–

–

48V  

DD  

V

IN  

D

L

0V  

≥

50

Ω  

RG  

–

–

10V  

I

= –

–

50A  

D

V

IN  

R =0.96

Ω  

L

G

D

V

OUT  

S

M

P

3003  

P

W

=10

μ

s  

D.C.

≤

1%  

0V  

–

–

10V  

S

V

DD  

50

Ω  

G

S

M

P

3003  

P. G  

50

Ω  

S

Fi

g

.3 Reverse Recovery T

i

m

e

T

e

st C

i

r

c

u

i

t  

D

S

M

P

3003  

L

G

V

DD  

S

Driv

e

r

M

OSFET  

Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity of  

highly charged objects.  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals”

 

must be validated for each customer application by customer’s technical  

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  

part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  

PS No. A1655-6/6