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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
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by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
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products are not designed, intended, or authorized
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STTFS010N10MCL
MOSFE
T
,
N
-Channel,
Shielded Gate,
POWERTRENCH
)
100
V
,
5
0 A, 10.6 m
W
General Description
This N
−
Channel POWETRENCH
MOSFET is produced using
ON Semiconductor’s
advanced POWERTRENCH
process that
®
®
ELECTRICAL CONNECTION
incorporates Shielded Gate technology. This process has been
optimized to minimize on
−
state resistance and yet maintain superior
switching performance with best in class soft body diode.
S
S
D
D
D
Features
S
•
Shielded Gate MOSFET Technology
G
D
•
Max r
•
Max r
= 10.6 m
W
at V
= 10
V
, I
=
1
5 A
GS D
DS(on)
= 15.9 m
W
at V
= 4.5
V
, I
=
1
2 A
DS(on)
GS
D
N-Channel MOSFET
•
50% Lower Qrr than Other MOSFET Suppliers
•
Lowers Switching Noise/EMI
•
MSL1 Robust Package Design
•
100% UIL Tested
8 7 6 5
D D D D
•
RoHS Compliant
Pin 1
Applications
1 2 3 4
Top
G S S S
Bottom
Pin 1
•
Primary DC
−
DC MOSFET
•
Synchronous Rectifier in DC
−
DC and AC
−
DC
•
Motor Drive
WDFN8
(3.3×3.3, 0.65 P)
CASE 511DY
MARKING DIAGRAM
XXXX
AYWW
XXXX
= Device Code
A
= Assembly Location
Y
=
Y
ear Code
WW
= Work Week Code
ORDERING INFORMATION
of this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
September, 2018
−
Rev. 1
STTFS010N10MCL/D
STTFS010N10MCL
MOSFET MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
100
20
V
I
Drain Current
−
Continuous
T
T
= 25
°
C
50
A
D
C
C
−
Continuous
−
Continuous
−
Pulsed
= 100
°
C
32
10.7
T =
25
°
C
A
250
E
AS
Single Pulse Avalanche Energy
Power Dissipation
73
mJ
W
P
T
= 25
°
C
C
52
D
Power Dissipation
T =
25
°
C
A
2.3
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
2.4
Unit
°
C/W
R
q
JC
R
53
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
1500 Units
S10L
STTFS010N10MCL
WDFN8 (3.3×3.3)
7’’
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I =
250
m
A, V
= 0 V
GS
100
V
DSS
D
Breakdown Voltage
T
e
mperature Coefficient
I
D
= 250
m
A, referenced to 25
°
C
64
mV/
°
C
D
BV
DSS
D
T
J
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80
V
, V
= 0 V
1
m
A
DSS
GSS
DS
GS
I
=
20
V
, V
= 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V
, I
= 85
m
A
1.0
1.5
3.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
T
e
mperature Coefficient
= 85
m
A, referenced to 25
°
C
−
5.3
mV/
°
C
D
V
GS(th)
D
T
J
D
r
Static Drain to Source On
Resistance
V
V
V
= 10 V, I
= 15 A
9.1
10.6
15.9
17.8
m
W
DS(on)
GS
GS
GS
D
= 4.5
V
, I
= 12 A
13.5
15.3
D
= 10 V, I
= 15 A,
D
T =
125
°
C
J
g
FS
Forward Transconductance
V
DS
= 5
V
, I
= 15 A
54
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Output Capacitance
V
= 50
V
, V
= 0 V,
1530
625
10
2150
875
18
pF
ISS
DS
GS
f = 1 MHz
C
OSS
C
RSS
Reverse Transfer Capacitance
Gate Resistance
R
0.1
1.1
2.1
W
G
2
STTFS010N10MCL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
t
Turn
*
On Delay Time
Rise Time
Turn
*
Off Delay Time
Fall Time
V
V
= 50 V, I
= 15 A
,
9
3
19
10
45
10
30
ns
d(ON)
DD
D
= 10
V
, R
= 6
W
GS
GEN
t
rd(ON)
t
28
5
d(OFF)
t
f
Q
Q
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Output Charge
V
= 0V to 10 V
= 0V to 4.5 V
22
10
4
nC
g
g
GS
V
GS
Q
V
I
= 50 V
gs
gd
DD
D
= 15 A
Q
3
Q
V
DD
= 50
V
, V
= 0 V
41
19
nC
V
oss
GS
Q
T
o
tal Gate Charge Sync
V
DS
= 0
V
, V
= 0
t
o 10 V
GS
sync
DRAIN
−
SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
V
= 0
V
, I
= 2 A
0.7
0.8
22
35
17
79
1.2
1.3
36
GS
S
= 0
V
, I
=
1
5 A
GS
S
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I =
8 A, di/dt = 300 A/
m
s
F
ns
nC
ns
Q
56
rr
t
rr
I =
8 A, di/dt = 1000 A/
m
s
F
30
Q
126
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5
×
1.5 in. board of FR
−
4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 53
°
C/W when mounted on
b) 125
°
C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in
pad of 2 oz copper.
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. E
of 73 mJ is based on starting T
= 25
_
C; L = 3 mH, I
= 7 A, V
= 100
V
, V
=
1
0
V
.
1
00% test at L = 0.5 mH, I
= 13 A.
AS
J
AS
DD
GS
AS
D
5. Computed
continuous current limited to Max Junction
T
e
mperature only, actual continuous current will be limited by thermal
& electro
−
mechanical application board design.
3
STTFS010N10MCL
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
150
120
90
60
30
0
4
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 3 V
V
GS
= 6 V
V
GS
= 3.5 V
3
2
1
0
V
GS
= 4.5 V
V
GS
= 6 V
V
GS
= 4.5 V
V
GS
= 3.5 V
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 3 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
30
60
90
120
150
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On
−
Resistance
vs. Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
I
D
= 15 A
V
GS
= 10 V
I
D
= 15 A
60
40
20
0
T
J
= 125
o
C
T
J
= 25
o
C
−
75
−
50
−
25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
T
J
,
JUNCTION TEMPERATURE
o
(
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance
vs. Gate to Source Voltage
150
100
150
120
90
60
30
0
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DS
= 5 V
10
1
T
J
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= 150
o
C
0.01
T
J
= 25
o
C
T
J
=
−
55
o
C
T
J
=
−
55
o
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
4
STTFS010N10MCL
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
10
8
10000
I
D
= 15 A
C
iss
1000
100
10
V
DD
= 25 V
C
oss
6
V
DD
= 50 V
4
C
rss
V
DD
= 75 V
2
f = 1 MHz
GS
= 0 V
V
0
1
0
5
10
15
20
25
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
100
10
1
60
45
30
15
0
R
q
JC
= 2.4
o
C/W
V
GS
= 10 V
T
J
= 25
o
C
V
GS
= 4.5 V
T
J
= 100
o
C
T
J
= 125
o
C
0.001 0.01
0.1
1
10
100
25
50
75
100
125
150
T
C
,
CASE TEMPERATURE
o
(
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
100
10000
1000
100
SINGLE PULSE
q
JC
= 2.
4
o
C/W
R
T
C
= 2
5
o
C
10
m
s
10
1
THIS AREA IS
LIMITED BY r
DS(on)
100
m
s
SINGLE PULSE
T
J
= MAX RATED
R
q
JC
= 2.
4
o
C/W
C
= 2
5
o
C
1 ms
CURVE BENT TO
MEASURED DATA
10 ms
T
100 ms/DC
0.1
10
10
−
5
10
−
4
10
−
3
t, PULSE WIDTH (sec)
10
−
2
10
−
1
1
0.1
1
10
100
700
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
5
STTFS010N10MCL
TYPICAL CHARACTERISTICS
(continued)
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
SINGLE PULSE
Z
R
(t) = r(t) x R
o
q
JC
q
JC
= 2.4
C/W
q
JC
Peak T
= P
x Z
(t) + T
J
DM
q
JC
C
Duty Cycle, D = t
/ t
1
2
0.001
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction
−
to
−
Case Transient Thermal Response Curve
6
STTFS010N10MCL
PACKAGE DIMENSIONS
WDFN8 3.3×3.3, 0.65P
CASE 511DY
ISSUE A
0.20 C
2X
B
D
0.10
D2
C A B
8
A
e/2
L1
M
8
5
5
G
E3
E2
E
E1
0.10
C A B
L
K
2X
0.20 C
G1
PIN 1
AREA
1
4
4
1
b
(8X)
e
0.10
0.05
C A B
C
BOTTOM VIEW
TOP VIEW
SIDE VIEW
NOTES:
1. CONTROLLING
DIMENSION: MILLIMETERS
2. DIMENSIONS
D1 & E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS NOR GATE BURRS.
D1
A
(4X)
c
Ө
0.10 C
A1
(8X)
MILLIMETERS
DIM
0.10 C
MIN NOM
MAX
C
A
A1
b
0.70 0.75 0.80
0.00 0.05
0.23 0.33 0.43
0.15 0.20 0.25
3.20 3.30 3.40
2.95 3.13 3.30
SEATING PLANE
−
END VIEW
c
3.46
2.38
D
D1
D2
E
E1
E2
E3
e
1.98
2.20 2.40
8
5
3.20 3.30 3.40
2.80 3.00 3.15
1.40 1.60 1.80
0.15 0.25 0.40
0.65 BSC
0.78 (4X)
0.75
2.51
4.10
G
G1
K
L
L1
M
0.30 0.43 0.55
0.25 0.35 0.45
0.55 0.75 0.95
0.35 0.52 0.65
0.06 0.15 0.30
0.57
1.00
1.35
0
1.50 1.60
12
0.60 (3X)
0.65
−
Ө
1
4
0.43 (8X)
RECOMMENDED LAND PATTERN
7
STTFS010N10MCL
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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STTFS010N10MCL/D
