onsemi-TIG030TS-TL-E
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Ordering number : ENA0637A
S
A
N
Y
O
S
em
i
conductors
DATA S
HEET
N-Channel IGBT
TIG030TS
Light-Controlling Flash Applications
Features
•
Low-saturation voltage.
•
4V drive.
•
Enhansment type.
•
Built-in gate-to-emitter protection diode.
Mounting height 1.1mm, mounting area 19.2mm
2
.
dv / dt guarantee.
*
•
•
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Symbol
Conditions
Ratings
Unit
V
V
CES
V
GES
V
GES
400
±
6
V
PW
≤
1ms
PW
≤
500
µ
s, duty cycle
≤
0.5%, C
=400
µ
F
±
8
V
I
150
400
150
A
CP
/ dt
M
Maximum Collector-to-Emitter dv / dt
Channel
T
e
mperature
dV
CE
V
≤
320V, starting
T
c
h=25
°
C
V /
µ
s
°
C
°
C
CE
T
c
h
Storage
T
e
mperature
T
s
tg
–
–
40 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
400
max
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Marking : G030
V
I
=2mA, V
=0V
V
(BR)CES
C GE
I
V
=320V, V
=0V
GE
10
±
10
µ
A
µ
A
CES
GES
CE
I
V
=
±
6V, V
=0V
CE
GE
Continued on next page.
*
: Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/
µ
s.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
“standard application”, intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any “special application” (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
‘
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
‘
s products or
TOKYO OFFICE
T
o
kyo Bldg., 1-10, 1 Chome, Ueno,
T
a
ito-ku, TOKYO, 110-8534 JAPAN
53007 TI IM / 11007PJ TI IM TC-00000459 No. A0637-1/4
TIG030TS
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=10
V
, I
=
1mA
Unit
min
max
1.2
5.4
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
V
(off)
GE
V
0.5
V
V
CE
C
V
(sat)
CE
Cies
I
=150A, V
=4V
C GE
3.7
2610
59
V
V
V
=10
V
,
f
=1MHz
CE
=10
V
,
f
=1MHz
CE
=10
V
,
f
=1MHz
CE
pF
pF
pF
Output Capacitance
Coes
Cres
Reverse Transfer Capacitance
36
Package Dimensions
unit : mm (typ)
Electrical Connection
7006A-007
8
7
6
5
3.0
0.125
8
5
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
1
4
0.25
0.65
Top view
1
2
3
4
SANYO : TSSOP8
Large Current R Load Screening Circuit
R =2.0
Ω
L
+
C =400
µ
F
M
V
=320V
CC
R
≥
50
Ω
G
TIG030TS
4V
0V
100k
Ω
Note1
.
G
ate Series Resistance R
≥
50
Ω
is recommended for prolection purpose at the time of turn OFF. However,
G
if dv/dt
≤
400V/
µ
s is satisfied at customer’s actual set evaluation, R
<50
Ω
can also be used.
G
Note2
.
T
he collector voltage gradient dv / dt must be smaller than 400V /
µ
s to protect the device when it is turned off.
No. A0637-2/4
TIG030TS
I
— V
I
— V
GE
C
CE
C
200
180
160
140
120
100
80
200
180
160
140
120
100
80
Tc=25
°
C
=5V
Tc=25
°
C
V
CE
60
60
40
40
20
0
20
0
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Collector-to-Emitter
V
o
ltage, V
— V
IT11955
Gate-to-Emitter
V
o
ltage, V
— V
IT11956
CE
GE
V
— V
V
— V
CE
GE
CE
GE
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
Tc= –25
°
C
Tc=25
°
C
1.5
1.0
1.5
1.0
0
1
2
3
4
5
6
1
2
3
4
5
6
Gate-to-Emitter
V
o
ltage, V
— V
Gate-to-Emitter
V
o
ltage, V
— V
IT11957
IT11958
GE
GE
V
— V
V
(sat)
–
– Tc
CE
GE
CE
6
5
4
3
2
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
Tc=75
°
C
V
GE
=4V
1
0
1.5
1.0
100
1
2
3
4
5
6
–
–
50
–
–
25
0
25
50
75
125
150
Gate-to-Emitter
V
o
ltage, V
— V
Case Temperature, Tc
–
–
°
C
IT11959
IT11960
GE
Cies, Coes, Cres
–
– V
V
(off)
–
– Tc
CE
GE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
10000
V
=10V
f
=
1MHz
7
5
CE
I =1mA
C
Cies
3
2
1000
7
5
3
2
100
7
5
3
2
0.3
0.2
10
–
–
50
–
–
25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
Case Temperature, Tc
–
–
°
C
Collector-to-Emitter
V
o
ltage, V
— V
IT11962
IT11961
CE
No. A0637-3/4
TIG030TS
SW Time
–
– I
Turn OFF dv / dt
–
– R
C
L
G
5
600
500
400
300
200
Tc=25
°
C
Xe -Tube Load
R =
2.2
Ω
, Tc=
25
°
C
V
V
V
=
=
330
V
,
I
=
120A,
=
4
V
,
R
=
82
Ω
3
2
CC
GE
CP
4
V
,
PW
=
50
µ
s
GE G
PW
=
50
µ
s
Driver :
SANYO TND721MH5
1000
7
5
3
2
100
0
100
7
5
10
0
20
40
60
80
100
120
IT11964
2
3
5
7
2
3
100
Collector Current, I
–
– A
IT11963
Gate Series Resistance, R
–
–
Ω
G
C
C
— I
I
— V
M
CP
CP
GE
450
400
350
300
250
200
150
100
160
140
120
100
80
C
=400
µ
F
M
Tc=25
°
C
Tc=70
°
C
60
40
V
=330V
CM
Tc
≤
70
°
C
20
0
50
0
V
=4V
≥
50
Ω
GE
R
G
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
IT11965
— A
CP
160
Gate-to-Emitter
V
o
ltage, V
— V
Collector Current (Pulse), I
IT09937
GE
Note : TIG030TS has protection diode between gate and emitter but handling it requires sufficient care to
be taken.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No.
A0637-4/4
