onsemi-TIP105G
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TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
Designed for general
−
purpose amplifier and low
−
speed switching
applications.
Features
•
High DC Current Gain
−
60
−
80
−
100 VOLTS, 80 WATTS
h
FE
= 2500 (Typ) @ I
= 4.0 Adc
C
MARKING
DIAGRAM
•
Collector
−
Emitter Sustaining
V
o
ltage
−
@ 30 mAdc
V
= 60 Vdc (Min)
−
TIP100, TIP105
= 80 Vdc (Min)
−
TIP101, TIP106
= 100 Vdc (Min)
−
TIP102, TIP107
CEO(sus)
4
TO
−
220AB
•
Low Collector
−
Emitter Saturation
V
o
ltage
−
CASE 221A
STYLE 1
TIP10xG
AYWW
V
CE(sat)
= 2.0 Vdc (Max) @ I
= 3.0 Adc
C
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
= 2.5 Vdc (Max) @ I
= 8.0 Adc
C
1
3. EMITTER
4. COLLECTOR
•
Monolithic Construction with Built
−
in Base
−
Emitter Shunt Resistors
•
Pb
−
Free Packages are Available*
2
3
TIP10x =
Device Code
x
= 0, 1, 2, 5, 6, or 7
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
ORDERING INFORMATION
this data sheet.
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014
−
Rev. 14
TIP100/D
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
MAXIMUM RATINGS
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
V
CEO
60
60
80
80
100
100
V
CB
V
EB
5.0
Collector Current
−
Continuous
−
Peak
I
8.0
15
C
Adc
Adc
Base Current
I
1.0
B
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
80
0.64
W
W/
°
C
C
Derate above 25
°
C
Unclamped Inductive Load Energy (1)
E
30
mJ
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
2.0
0.016
W
W/
°
C
A
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
THERMAL CHARACTERISTICS
Characteristic
T , T
–
6
5 to
+
1
50
°
C
J
stg
Symbol
Max
1.56
62.5
Unit
°
C/W
°
C/W
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JC
R
q
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. I
= 1.1 A, L = 50 mH,
P
.
R.
F
. =
1
0 Hz, V
= 20
V
, R
=
1
00
W
C
CC
BE
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector
−
Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I =
30 mAdc, I
= 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
60
80
100
−
−
−
C
B
Collector Cutoff Current
(V =
30 Vdc, I
= 0)
I
I
m
Adc
m
Adc
CEO
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
CE
B
−
−
−
50
50
50
(V =
40 Vdc, I
= 0)
CE
B
(V =
50 Vdc, I
= 0)
CE
B
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
CBO
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
CB
E
−
−
−
50
50
50
(V =
80 Vdc, I
= 0)
CB
E
(V =
100 Vdc, I
= 0)
CB
E
Emitter Cutoff Current (V
= 5.0 Vdc, I
= 0)
I
EBO
−
8.0
mAdc
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
−
(I =
3.0 Adc, V
= 4.0 Vdc)
C
CE
1000
200
20,000
−
(I =
8.0 Adc, V
= 4.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage
(I =
3.0 Adc, I
= 6.0 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
−
−
2.0
2.5
(I =
8.0 Adc, I
= 80 mAdc)
C
B
Base
−
Emitter On Voltage (I
= 8.0 Adc, V
= 4.0 Vdc)
V
BE(on)
−
2.8
C
CE
DYNAMIC CHARACTERISTICS
Small
−
Signal Current Gain (I
= 3.0 Adc, V
= 4.0 Vdc, f = 1.0 MHz)
h
fe
4.0
−
−
C
CE
Output Capacitance (V
= 10 Vdc, I
= 0, f = 0.1 MHz)
TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
C
−
−
300
200
pF
CB
E
ob
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
2
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
COLLECTOR
COLLECTOR
BASE
BASE
≈
8.0 k
≈
120
≈
8.0 k
≈
120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
TIP100
TO
−
220
50 Units / Rail
50 Units / Rail
TIP100G
TO
−
220
(Pb
−
Free)
TIP101
TO
−
220
50 Units / Rail
50 Units / Rail
TIP101G
TO
−
220
(Pb
−
Free)
TIP102
TO
−
220
50 Units / Rail
50 Units / Rail
TIP102G
TO
−
220
(Pb
−
Free)
TIP105
TO
−
220
50 Units / Rail
50 Units / Rail
TIP105G
TO
−
220
(Pb
−
Free)
TIP106
TO
−
220
50 Units / Rail
50 Units / Rail
TIP106G
TO
−
220
(Pb
−
Free)
TIP107
TO
−
220
50 Units / Rail
50 Units / Rail
TIP107G
TO
−
220
(Pb
−
Free)
T
A
T
C
4.0 80
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 2. Power Derating
3
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
5.0
PNP
NPN
V
CC
-ꢂ30 V
t
s
R
& R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
D ,
MUST BE FAST RECOVERY TYPE, eg:
B
3.0
2.0
1
ꢀ1N5825 USED ABOVE I
≈
100 mA
ꢀMSD6100 USED BELOW I
≈
100 mA
B
R
C
SCOPE
t
f
B
1.0
TUT
V
2
R
B
0.7
0.5
approx
+ꢂ8.0 V
D
1
≈
8.0 k
51
≈
120
0.3
0.2
0
t
r
V
1
V
= 30 V
I /I
= 250
CC
+ꢂ4.0 V
approx
-12 V
C B
25
m
s
for t
and t , D
is disconnected
0.1
d
r
1
I
= I
B1 B2
and V
= 0
2
0.07 T
= 25
°
C
t , t
≤
10 ns
J
t @
V
d
= 0 V
r
f
DUTY CYCLE = 1.0%
BE(off)
0.05
For NPN test circuit reverse all polarities.
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (AMP)
C
Figure 3. Switching Times Test Circuit
Figure 4. Switching Times
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
0.1
0.07
0.05
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
R
= 1.56
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
1
t
2
0.01
T
– T
= P
C
Z
q
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1 2
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0
k
t, TIME (ms)
Figure 5. Thermal Response
20
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
5ꢁms
breakdown. Safe operating area curves indicate I
−
V
C
CE
5.0
100
m
s
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1ꢁms
2.0
1.0
0.5
d
c
T =
150
°
C
J
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
= 25
°
C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
variable depending on conditions. Second breakdown pulse
= 150
°
C; T
is
J(pk)
C
C
0.2
0.1
limits are valid for duty cycles to 10% provided T
CEO
J(pk)
< 150
°
C. T
J(pk)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
0.05
0.02
1.0
2.0
5.0
10
20
50
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active
−
Region Safe Operating Area
4
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
10,000
5000
T
= 25
°
C
= 4.0 Vdc
CE
C
V
3000
2000
I
C
= 3.0 Adc
1000
500
300
200
100
50
30
20
PNP
NPN
10
1.0
2.0
5.0 10
20
50 100 200
500 1000
f, FREQUENCY (kHz)
Figure 7. Small
−
Signal Current Gain
300
200
T =
25
°
C
J
C
ob
100
70
C
ib
50
PNP
NPN
30
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 8. Capacitance
5
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
NPN
PNP
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
20,000
10,000
5000
20,000
10,000
V
CE
= 4.0 V
V
CE
= 4.0 V
7000
5000
T =
150
°
C
J
T =
150
°
C
J
25
°
C
25
°
C
3000
2000
3000
2000
-ꢂ55
°
C
-ꢂ55
°
C
1000
500
1000
700
500
300
200
0.1
300
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
3.0
T =
25
°
C
T =
25
°
C
J
J
2.6
I
= 2.0 A
4.0 A
6.0 A
I
= 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
C
C
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 10. Collector Saturation Region
3.0
2.5
2.0
1.5
1.0
0.5
3.0
T =
25
°
C
T =
25
°
C
J
J
2.5
2.0
V
@ I
/I =
250
C B
BE(sat)
V
BE
@ V
= 4.0 V
CE
1.5
1.0
0.5
V
@ V
= 4.0 V
CE
BE
V
@ I
/I =
250
C B
BE(sat)
V
@ I
/I =
250
C B
V
@ I
/I =
250
C B
CE(sat)
CE(sat)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 11. “On” Voltages
6
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−
T
−
C
B
F
T
S
INCHES
DIM MIN
MILLIMETERS
4
1
MAX
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and the
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−
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. SCILLC
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
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T
:
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o
ll Free
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TIP100/D
